NTE491 NTE491SM MOSFET N−Ch, Enhancement Mode High Speed Switch Features: D Available in either TO92 (NTE491) or SOT−23 Surface Mount (NTE491SM) Type Package D High Density Cell Design for Low RDS(ON) D Voltage Controlled Small Signal Switch D Rugged and Reliable D High Saturation Current Capability D G S Absolute Maximum Ratings: Drain−Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Drain−Gate Voltage (RGS = 1M+ ), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Gate−Source Voltage, VGS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V Non−Repetitive (tp 3 50.s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +40V Drain Current, ID Continuous NTE491 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA NTE491SM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115mA Pulsed NTE491 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA NTE491SM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA Total Device Dissipation (TA = +255C), PD NTE491 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW NTE491SM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Derate above 255C NTE491 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/5C NTE491SM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6mW/5C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Thermal Resistance, Junction−to−Ambient, Rth (JA) NTE491 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 312.55C/W NTE491SM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6255C/W Maximum Lead Temperature (During Soldering, 1/16” from case, 10sec), TL . . . . . . . . . . . . +3005C Rev. 10−13 Electrical Characteristics: (TA = +255C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VGS = 0, ID = 10.A 60 − − V VDS = 48V, VGS = 0 − − 1.0 .A − − 1.0 mA − − 1.0 .A − − 0.5 mA VGSF = 15V, VDS = 0 − − 10 nA VGSF = 20V, VDS = 0 − − 100 nA VGSF = −15V, VDS = 0 − − −10 nA VGSF = −20V, VDS = 0 − − −100 nA ID = 1mA, VDS = VGS 0.8 − 3.0 V ID = 250.A, VDS = VGS 1.0 2.1 2.5 V − 1.2 5.0 + − 1.9 9.0 + VGS = 4.5V, ID = 75mA − 1.8 5.3 + VGS = 10V, ID = 500mA − 1.2 7.5 + − 1.7 13.5 + VGS = 10V, ID = 500mA − 0.6 2.5 V VGS = 4.5V, ID = 75mA − 0.14 0.45 V VGS = 10V, ID = 500mA − 0.6 3.75 V VGS = 4.5V, ID = 75mA − 0.9 1.5 V VGS = 4.5V, VDS = 10V 75 600 − mA VGS = 10V, VDS . 2 VDS(on) 500 2700 − mA VDS = 10V, ID = 200mA 100 320 − .mhos VDS . 2 VDS(on), ID = 200mA 80 320 − .mhos VDS = 25V, VGS = 0, f = 1MHz − 20 50 pF OFF Characteristics Drain−Source Breakdown Voltage V(BR)DSS Zero−Gate−Voltage Drain Current NTE491 IDSS NTE491SM Gate−Body Leakage Current, Forward NTE491 VDS = 60V, VGS = 0 IGSSF NTE491SM Gate−Body Leakage Current, Reverse NTE491 IGSSR NTE491SM TJ = +1255C TJ = +1255C ON Characteristics (Note 1) Gate Threshold Voltage NTE491 VGS(Th) NTE491SM Static Drain−Source ON Resistance NTE491 rDS(on) NTE491SM Drain−Source ON−Voltage NTE491 VDS(on) NTE491SM ON−State Drain Current NTE491 Id(on) NTE491SM Forward Transconductance NTE491 gfs NTE491SM VGS = 10V, ID = 500mA TJ = +1255C TJ = +1005C Dynamic Characteristics Input Capacitance Ciss Reverse Transfer Capacitance Coss − 11 25 pF Output Capacitance Crss − 4 5 pF Note 1. Pulse Test: Pulse Width 3 300.s, Duty Cycle 3 2%. Electrical Characteristics (Cont’d): (TA = +255C unless otherwise specified) Parameter Symbol Min Typ Max Unit VDD = 15V, RL = 25+ , ID = 500mA, VGS = 10V, RGEN = 25+ − − 10 ns VDD = 30V, RL = 150+ , ID = 200mA, VGS = 10V, RGEN = 25+ − − 20 ns VDD = 15V, RL = 25+ , ID = 500mA, VGS = 10V, RGEN = 25+ − − 10 ns VDD = 30V, RL = 150+ , ID = 200mA, VGS = 10V, RGEN = 25+ − − 20 ns IS − − 115 mA Maximum Pulsed Drain−Source Diode Forward Current ISM − − 0.8 A Drain−Source Diode Forward Voltage VSD − 0.88 1.5 V Turn−On Time NTE491 ton NTE491SM Turn−Off Time NTE491 toff NTE491SM Test Conditions Drain−Source Diode Charactweristics and Maximum Ratings (NTE491SM ONLY) Maximum Continuous Drain−Source Diode Forward Current VGS = 0, IS = 115mA, Note 1 Note 1. Pulse Test: Pulse Width 3 300.s, Duty Cycle 3 2%. NTE491 NTE491SM .135 (3.45) Min .210 (5.33) Max .016 (0.48) Seating Plane .098 (2.5) Max D .500 (12.7) Min .021 (.445) Dia Max G S .037 (0.95) S G D .074 (1.9) .118 (3.0) Max .100 (2.54) .051 (1.3) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .205 (5.2) Max .105 (2.67) Max .043 (1.1) .007 (0.2)