UTC 2SC2482 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR APPLICATIONS *HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS *COLOR TV HORIZ. DRIVER APPLICATIONS *COLOR TV CHROMA OUTPUT APPLICATIONS 1 FEATURES *High Voltage :V(BR)CEO= 300V *Small Collector Output Capacitance: Cob=3.0pF(Typ.) TO-92NL 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ) PARAMETER SYMBOL LIMITS UNIT VCBO VCEO VEBO Ic IB Pc Tj TSTG 300 300 7 100 50 900 150 -55 ~ +150 V V V mA mA mW °C °C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage Transition Frequency Collector Output Capacitance UTC SYMBOL ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT Cob TEST CONDITIONS VCB=240V IE= 0 VEB= 7V Ic=0 VCE=10V,Ic=4mA VCE=10V,Ic=20mA Ic=10mA,IB=1mA Ic=10mA,IB=1mA VCE=10V, Ic=20mA VCB=20V, IE= 0, f=1MHz UNISONIC TECHNOLOGIES MIN TYP 20 30 MAX UNIT 1.0 1.0 μA μA 150 1.0 1.0 50 3.0 CO. LTD V V MHz pF 1 QW-R211-015,A UTC 2SC2482 NPN EPITAXIAL SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS CURVES 4 3 2 80 1 60 0.6 40 0.4 IB=0.2mA 20 4 8 12 16 Collector -Emitter Voltage Vc 20 E(V) 50 Ta=25 ℃ Ta=-25 ℃ 30 Collector-Emiitter Saturation Voltage V CE(sat)(V) 10 0.3 5 3 1 1 10 30 3 Collector Current Ic (mA) 100 Ta=100 ℃ 0.1 UTC Ta=25 ℃ 1 V CE =5V 1 3 1 Ta=-25 ℃ 3 10 30 Collector Current Ic (mA) 100 3 10 30 Collector Current Ic (mA) 100 V CE(sat)-Ic Common Emitter Ta=25 ℃ 0.5 0.3 IC/IB=10 5 0.1 2 1 10 30 3 Collector Current Ic (mA) 100 V BE(sat)-Ic 5 Common Emitter IC /IB=5 0.05 0.3 V CE =10V 0.05 0.3 V CE (sat)-Ic 0.5 0.3 V CE=20V 5 Ta=100 ℃ 100 100 10 0.3 24 Common Emitter V CE =10V 300 Common Emitter Ta=25 ℃ 30 hFE -Ic 500 300 50 Collector-Emiitter Saturation Voltage V CE (sat)(V) 0 DC Current Gain hFE 500 Base-Emitter Saturation Voltage V BE(sat)(V) Collector Current Ic (mA) Common Emitter Ta=25 ℃ 6 100 0 DC Current Gain hFE hFE -Ic Ic-V CE 120 Common Emitter Ta=25 ℃ IC /IB=5 3 1 0.5 0.3 0.1 0.3 UNISONIC TECHNOLOGIES 1 10 30 3 Collector Current Ic (mA) CO. LTD 100 2 QW-R211-015,A UTC 2SC2482 NPN EPITAXIAL SILICON TRANSISTOR Ic-V BE 80 fT -Ic 500 Common Emitter V CE=10 V 60 Ta=100 ℃ Ta=-25 ℃ 40 Ta=25℃ 20 0 0.2 0.4 0.6 0.8 Base -Emitter Voltage V 1.0 BE(V) 1.2 Transition Frequency fT(MHz) Collector Current Ic (mA) 100 Common Emitter Ta=25 ℃ 300 V CE=20V 100 50 V CE=5V 30 V CE =10V 10 0.3 1 3 10 30 Collector Current Ic (mA) 100 Safe Operating Area Ic MAX.(CONINUOUS) 50 PT=1s DC Operation 30 Ta=25℃ 10 5 2 3 Cob-V CB 50 1ms 10ms* 100ms* 500ms* *Single Nonrepetitive Pulse Ta=25 ℃ Curves Must Be Derated Linearly With Increase In Temperature V CEO MAX 10 30 100 300 Collector-Emitter Voltage V CE(V) Collector Output Capacitance Cob(pF) 100 30 μs* Ic MAX.(PULSED)* Collector Current-Ic(mA) Collector Current Ic(mA) 300 IE=0 f=1MHz Ta=25 ℃ 30 10 5 3 1 1 3 10 30 100 300 Collector-Base Voltage V CB(V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R211-015,A