NTE276 Silicon Controlled Rectifier (SCR) Gate Controlled Switch Features: D Gate Turn−Off Thyristor D High Speed Power Switching D TV Horizontal Output D Inverter and Converter Application D Supplied in a Japanese TO66 Type Package Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Non−Repetitive Peak Off−State Voltage (TJ = −40° to +120°C, VGK = 0), VDSM . . . . . . . . . . . 1400V Repetitive Peak Off−State Voltage (TJ = −40° to +120°C, VGK = 0), VDRM . . . . . . . . . . . . . . . . 1250V DC On−State Anode Current (TC = +60°C), IT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Surge On−State Current (TC = +60°C), ITSM t = 100µs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80A t = 1ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33A Peak Forward Gate Current (TC = +60°C, t = 1ms), IGFM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Average Forward Gate Power Dissipation (TC = +60°C), PGF(AV) . . . . . . . . . . . . . . . . . . . . . . . . . 1W Peak Reverse Gate Power Dissipation (TC = +60°C, t = 5µs), PGRM . . . . . . . . . . . . . . . . . . . . . 30W Average Reverse Gate Power Dissipation (TC = +60°C), PGR(AV) . . . . . . . . . . . . . . . . . . . . . . . . . 2W Total Power Dissipation (TC = +25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47.5W Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +120°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −50° to +120°C Thermal Resistance, Junction−to−Case, RthJC Typical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3°C/W Maximum . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0°C/W Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Controllable Anode Current ITC VD = 100V, VGR = 9V, Rg = 0 25 − − A On−State Voltage VT IT = 5A, IGF = 300mA − − 5.3 V Gate Trigger Voltage VGT VD = 10V − − 1.5 V Gate Trigger Current IGT VD = 10V − − 120 mA Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Latching Current IL Holding Current IH Test Conditions Min Typ Max Unit − 0.6 − A − 300 − mA 14.7 20.0 − VD = 10V Turn−Off Current Gain Goff VD = 100V, IT = 25A, toff = 10µs Off−State Anode Current IDRM VD = 1000V, VGK = 0 − − 0.5 mA VD = 100V, IT = 5A, IGF = 250mA − 0.2 − µs − 1.3 − µs − 0.22 − µs − 0.09 − µs 1000 − − V/µs 9 12 − V Turn−On Time td tr Turn−Off Time tstg VD = 100V, IT = 5A, IGR = 9V tf Critical rate of Rise of Off−State Voltage dv/dt Gate Breakdown Voltage VDM = 1000V, VGK 0 V(BR)GR IGR = 10mA .350 (8.89) .562 (14.28) Dia .062 (1.57) .031 (0.78) Dia .905 (23.0) .350 (8.89) Min Gate .516 (13.1) .161 (4.1) Dia (2 Places) .141 (3.69) R .350 (8.89) R Max Anode (Case) .238 (6.04) Cathode