NTE2390 MOSFET N−Channel Enhancement Mode, High Speed Switch Description: The NTE2390 is an N−Channel Enhancement Mode Power MOS Field Effect Transistor in a TO220 type package designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers. Features: D Silicon Gate for Fast Switching Speeds D IDSS, VDC(on), VGS(th), and SOA Specified at Elevated Temperatures. D Rugged − SOA is Power Dissipation Limited D Source−to−Drain Diode Characterized for Use With Inductive Loads D G S Absolute Maximum Ratings: Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Drain−Gate Voltage (RGS = 1M+ ), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V Drain Current, ID Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Total Power Dissipation (TC = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75W Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6W/5C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −655 to +1505C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −655 to +1505C Maximum Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.675C/W Maximum Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . 305C/W Maximum Lead Temperature (During soldering), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +2755C Rev. 10−13 Electrical Characteristics: (TC = +255C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 60 − − V VGS = 0, VDS = Max Rating − − 0.2 mA VGS = 0, VDS = 48V, TJ = +1255C − − 1.0 mA OFF Characteristics Drain−Source Breakdown Voltage Zero−Gate Voltage Drain Current V(BR)DSS ID = 0.25mA, VGS = 0 IDSS Gate−Body Leakage Current, Forward IGSSF VDS = 0, VGSF = 20V − − 100 nA Gate−Body Leakage Current, Reverse IGSSR VDS = 0, VGSR = 20V − − 100 nA VGS(th) VDS = VGS, ID = 1mA 2.0 − 4.5 V VDS = VGS, ID = 1mA, TJ = +1005C 1.5 − 4.0 V ON Characteristics (Note 1) Gate Threshold Voltage Static Drain−Source On Resistance rDS(on) VGS = 10V, ID = 6A − − 0.2 + Drain−Source ON−Voltage VDS(on) VGS = 10V, ID = 12A − − 3.0 V VGS = 10V, ID = 6A, TJ = 1005C − − 2.8 V gfs VDS = 15V, ID = 6A 4 − − mhos Input Capacitance Ciss − − 400 pf Output Capacitance Coss VDS = 25V, VGS = 0, f = 1MHz − − 300 pf Reverse Transfer Capacitance Crss − − 100 pf − − 60 ns − − 160 ns td(off) − − 80 ns tf − − 110 ns − 13 26 nC − 6 − nC − 7 − nC − 1.8 3.2 V Forward Transconductance Dynamic Characteristics Switching Characteristics (TJ = +1005C, Note 1) Turn−On Time Rise Time Turn−Off Delay Time Fall Time td(on) tr Total Gate Charge Qg Gate−Source Charge Qgs Gate−Drain Charge Qgd VDD = 25V, ID = 0.5 Rated ID, Rgen = 50+ VDS = 48V, VGS = 10V, ID = Rated ID Source Drain Diode Characteristics (Note 1) Forward ON Voltage VSD IS = Rated ID, VGS = 0 Forward Turn−On Time ton Limited by stray inductance Reverse Recovery Time trr − 300 − ns Measured from the contact screw on tab to center of die − 3.5 − nH Measured from the drain lead 0.25” from package to center of die − 4.5 − nH Measured from the source lead 0.25” from package to source bond pad − 7.5 − nH Internal Package Inductance Internal Drain Inductance Internal Source Inductance Ld Ls Note 1. Pulse test: Pulse width 3 3003s, Duty cycle 3 2%. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Gate .100 (2.54) Source Drain/Tab