UTC UT136FE TRIAC TRIACS DESCRIPTION Glass passivated sensitive gate triacs in a full pack,plastic envelop, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. 1 SYMBOL MT2 TO-220F G 1:MT1 MT1 2:MT2 3:GATE ABSOLUTE MAXIMUM RATINGS PARAMETER Repetitive peak off-state voltages UT136FE-5 UT136FE-6 UT136FE-8 RMS on-state current full sine wave; Ths ≤ 92 °C Non-repetitive peak on-state current Full sine wave; Tj = 125 °C prior to surge; with reapplied VDRM(max) t = 20ms t = 16.7 ms I2t for fusing (t = 10 ms) Repetitive rate of rise of on-state current after triggering ITM = 6 A; IG = 0.2A;dIG /dt = 0.2A/μs T2+ G+ T2+ GT2- GT2- G+ SYMBOL RATINGS UNIT V VDRM 500* 600* 800 IT(RMS) 4 A 25 27 3.1 A ITSM I2t dIT /dt 50 50 50 10 A2s A/μs Peak gate voltage VGM 5 V Peak gate current IGM 2 A Peak gate power PGM 5 W Average gate power (over any 20 ms period) PG(AV) 0.5 W ℃ Storage temperature Tstg -40 ~ 150 ℃ Operating junction temperature Tj 125 *Although not recommended, off-state voltages up to 800V may be applied without damage, but the traic may switch to the on-state. The rate of rise of current should not exceed 3A/µs. UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R401-022,B UTC UT136FE TRIAC ISOLATION LINITING VALUE & CHARACTERISTIC(Ths=25°C,unless otherwise specified) PARAMETER SYMBOL Repetitive paek voltage form all three terminals to external heatsink (R.H.≦65%,clean and dustfree) Visol Capacitance from MT2 to external heatsink Cisol (f=1MHz) MIN TYP MAX UNIT 1500 V 12 pF THERMAL RESISTANCES PARAMETER SYMBOL Thermal resistance Junction to heatsink (Full or half cycle) with heatsink compound without heatsink compound Thermal resistance Junction to ambient (In free air) MIN TYP MAX UNIT 5.5 7.2 K/W Rth j-hs Rth j-a 55 K/W STATIC CHARACTERISTICS (Tj=25°C,unless otherwise specified) PARAMETER SYMBOL Gate trigger current CONDITIONS MIN TYP MAX T2+ G+ T2+ GT2- GT2- G+ 2.5 4.0 5.0 11 10 10 10 25 T2+ G+ T2+ GT2- GT2- G+ 3.0 10 2.5 4.0 15 20 15 20 2.2 1.4 0.7 0.4 0.1 15 1.7 1.5 UNIT VD = 12 V; IT = 0.1 A IGT Latching current mA VD = 12 V; IGT = 0.1 A IL Holding current On-state voltage Gate trigger voltage IH VT VGT Off-state leakage current ID VD = 12 V; IGT = 0.1 A IT = 5 A VD = 12 V; IT = 0.1 A VD = 400V ; IT = 0.1 A; Tj =125°C VD = VDRM(max) ; Tj = 125 °C 0.25 0.5 mA mA V V V mA DYNAMIC CHARACTERISTICS(Tj=25°C,unless otherwise specified) PARAMETER SYMBOL Critical rate of rise of Off-state voltage Gate controlled turn-on time UTC CONDITIONS MIN TYP MAX UNIT dVD /dt VDM = 67% VDRM(max) ; Tj =125°C; exponential waveform; gate open circuit 50 V/µs tgt ITM = 6 A; VD= VDRM(max) ; IG=0.1A; dIG/dt=5A/µs 2 µs UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R401-022,B UTC UT136FE TRIAC TYPICAL CHARACTERISTICS Ths(max)/C 8 Ptot/W 7 86.5 α 6 81 α=180 α 92 α=120 97.5 α=90 α=60 103 α=30 108.5 5 4 3 2 114 1 119.5 5 1 92℃ 4 3 2 1 0 -50 125 5 4 3 IT(RMS) /A Fig.1. Maximum on-state dissipation Ptot,versus rms on-state current , IT(RMS), where α=conduction angle. 0 0 IT(RMS)/A 2 50 100 150 Ths/C Fig.4. Maximum permissible rms current IT(RMS) , versus heatsink temperature Ths. 0 IT(RMS)/A ITSM/A 12 1000 ITSM IT 10 time T 8 Tj initial=125℃max 100 6 dIT/dt limit 4 T2-G+ quadrant 10 10us 100us 2 1ms 10ms 0 0.01 100ms Fig.2. Maximum Permissible non-repetitive peak on-state Current ITSM ,versus pulse width tp, for sinusoidal currents,tp≦ 20ms. 30 ITSM/A 1.6 ITSM IT 25 0.1 1 10 surge duration /S Fig. 5.Maximum permissible repetitive rms on-state current I T(RMS),versus surge duration ,for sinusoidal current,f=50HZ;Ths≦92℃ T/s VGT(Tj) VGT(25℃) 1.4 T 20 time 1.2 Tj initial=125 ℃max 15 1 10 0.8 5 0.6 0 0.4 -50 0 10 100 1000 Number of cycles at 50Hz Fig3.Maximum Permissible non-repetitive peak on-state current I TSM,versus number of cycles,for sinusoidal currents,f=50HZ. UTC 0 50 100 0 50 100 150 150 Tj/℃ Fig.6. Normalised gate trigger voltage VGT(Tj)/VGT(25℃),versus junction temperature Tj. UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R401-022,B UTC UT136FE 3 TRIAC IGT(Tj) IGT(25℃) IT/A 12 T2+G+ T2+GT2-GT2-G+ 2.5 2 1 4 0.5 2 0 50 Tj/℃ 100 Fig. 7.Normalised gate trigger Current IGT(Tj)/I GT(25℃),versus junction temperature Tj 3 0 150 typ Vo=1.27V Rs=0.091 Ohms 8 6 max Tj=25 ℃ 10 1.5 0 -50 Tj=125 ℃ 0 0.5 1 2 1.5 VT/V 2.5 3 Fig.10.Typical and maximum on-state characteristic. . IL(Tj) IL(25℃) Zth j-hs (K/W) 10 with heatsink compound without heatsink compound 2.5 unidirectional 1 2 bidirectional 1.5 1 0.1 tp PD 0.5 t 0 -50 0 50 100 150 Tj/℃ 3 Fig.8.Normalised latching Current I L(Tj)/I L(25℃), versus junction temperature Tj. IH (Tj) IH (25℃) 0.01 10us 0.1ms 1ms 10ms tp / s 0.1s 1s 10s Fig.11.Transient thermal impedance Zthj-mb,versus pulse width tp. 1000 dVD /dt(V/us) 2.5 100 2 1.5 10 1 0.5 0 -50 0 50 100 150 Tj/℃ Fig. 9.Normalised holding current I H (Tj)/I H (25℃), versus junction temperature Tj . UTC 1 0 50 100 150 Tj/C Fig.12.Typical,critical rate of rise of off-satate voltage,dV D /dt versus junction temperature Tj. UNISONIC TECHNOLOGIES CO., LTD. 4 QW-R401-022,B UTC UT136FE TRIAC UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO., LTD. 5 QW-R401-022,B