NTE5555

NTE5555
Silicon Controlled Rectifier (SCR)
820 Amp, TO200AB
Absolute Maximum Ratings: (TJ = +125°C unless otherwise specified)
Repetitive Peak Voltages, VRRM, VDRM, VDSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Non−Repetitive Peak Reverse Blocking Voltage, VRSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
Average On−State Current (Half Sine Wave), IT(AV)
Ths = +55°C (Double Side Cooled) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 735A
RMS On−State Current (Ths = +25°C, Double Side Cooled), IT(RMS) . . . . . . . . . . . . . . . . . . . . . 820A
Continuous On−State Current (Ths = +25°C, Double Side Cooled), IT . . . . . . . . . . . . . . . . . . . 1230A
Peak One−Cycle Surge (10ms duration, 60% VRRM re−applied), ITSM (1) . . . . . . . . . . . . . . . . . 7600A
Non−Repetitive On−State Current (10ms duration, VR ≤ 10V), ITSM (2) . . . . . . . . . . . . . . . . . . . 8360A
Peak Forward Gate Current (Anode positive with respect to cathode), IFGM . . . . . . . . . . . . . . . . 20A
Peak Forward Gate Voltage (Anode positive with respect to cathode), VFGM . . . . . . . . . . . . . . . 18V
Peak Reverse Gate Voltage, VRGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Average Gate Power, PG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Peak Gate Power (100μs pulse width), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Rate of Rise of Off−State Voltage (To 80% VDRM gate open−circuit), dv/dt . . . . . . . . . . . . . 200V/μs
Rate of Rise of On−State Current, di/dt
(Gate drive 20V, 20Ω with tr ≤ 1μs, anode voltage ≤ 80% VDRM)
Repetitive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500A/μs
Non−Repetitive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000A/μs
Operating Temperature Range, Ths . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +150°C
Thermal Resistance, Junction−to−Heatsink, Rth(j−hs)
(For a device with a maximum forward voltage drop characteristic)
Double Side Cooled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.05°C/W
Single Side Cooled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.1°C/W
Peak On−State Voltage (ITM = 1550A), VTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.78V
Forward Conduction Threshold Voltage, VO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.03V
Forward Conduction Slope Resistance, r . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.483mΩ
Repetitive Peak Off−State Current (At VDRM), IDRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40mA
Repetitive Peak Reverse Current (At VRRM), IRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40mA
Maximum Gate Current (VA = 6V, IA = 1A, TJ = +25°C), IGT . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA
Maximum Gate Voltage (VA = 6V, IA = 1A, TJ = +25°C), VGT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Maximum Holding Current (VA = 6V, IA = 1A, TJ = +25°C), IH . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Maximum Gate Voltage Which Will Not Trigger Any Device, VGD . . . . . . . . . . . . . . . . . . . . . . . 0.25V
Rev. 12−11
.190 (4.8)
25°
1.650
(42.0)
Dia
1.102 (28.0)
.140 x .075
(3.5 x 1.8)
Dia (2 Holes)
.012
(0.3)
.990
(25.1)
Dia
Cathode
.590
(15.0)
Gate Terminal
Anode
.990
(25.1)
Dia