Datasheet

UNISONIC TECHNOLOGIES CO., LTD
9013
NPN EPITAXIAL SILICON TRANSISTOR
1W OUTPUT AMPLIFIER OF
POTABLE RADIOS IN CLASS
B PUSH-PULL OPERATION
1

FEATURES
TO-92
* High total power dissipation. (625mW)
* High collector current. (500mA)
* Excellent hFE linearity.
* Complementary to UTC 9012

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
9013L-x-T92-B
9013G-x-T92-B
TO-92
9013L-x-T92-K
9013G-x-T92-K
TO-92
Note: Pin assignment: E: Emitter
B: Base
C: Collector

Pin Assignment
1
2
3
E
B
C
E
B
C
Packing
Tape Box
Bulk
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., LTD
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9013

NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
500
mA
Collector dissipation
PC
625
mW
Junction Temperature
TJ
125
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
VBE(on)
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage

TEST CONDITIONS
IC=-100A, IE=0
IC=1mA, IB=0
IE=100A, IC=0
VCB=25V, IE=0
VEB=3V, IC=0
VCE=1V, IC=50mA
VCE=1V, IC=500mA
IC=-500mA, IB=-50mA
IC=-500mA, IB=-50mA
VCE=1V, IC=10mA
MIN
40
20
5
TYP
MAX
100
100
64
40
0.6
120
120
0.16
0.91
0.67
UNIT
V
V
V
nA
nA
300
0.6
1.2
0.7
V
V
V
CLASSIFICATION OF hFE1
RANK
RANGE
D
64-91
E
78-112
F
96-135
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
G
112-166
H
144-202
I
190-300
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NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERICS

Static Characteristic
Dc Current Gain
1000
18
IB=140μA
16
IB=120μA
500
300
14
IB=100μA
100
12
Dc Current Gain, hFE
Collector Current, IC (mA)
20
IB=80μA
10
IB=60μA
8
6
IB=40μA
4
IB=20μA
2
0
0
10
20
30
40
50
30
10
5
3
1
50
VCE=1V
1
3 5 10
Collector - Emitter Voltage, VCE (V)
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
IC=10IB
3000
1000
VBE (SAT)
500
300
100
50
VCE (SAT)
30
10
1
3
10
30 100 300 1000 3000 10000
Collector Current, IC (mA)
Current Gain-Bandwidth Product
Current Gain-Bandwidth Product, fT(MHz)
Saturation Voltage,
VBE(SAT), VCE(SAT) (mV)
10000
30 50 100 300 1000 3000 10000
Collector Current, IC (mA)
1000
IC=10IB
500
300
100
VCE=6V
50
30
10
5
3
1
1
3
10
30 100 300 1000 3000 10000
Collector Current, IC (mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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