Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UN1066
NPN SILICON TRANSISTOR
HIGH SPEED SWITCHING
TRANSISTOR

FEATURES
* Low VCE(SAT) voltage, up to 3A
* Suitable for fast switching applications
* High current gain

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
UN1066G-AB3-R
SOT-89
UN1066L-TN3-R
UN1066G-TN3-R
TO-252
Note: Pin Assignment: B: Base C: Collector
E: Emitter

Pin Assignment
1
2
3
B
C
E
B
C
E
Packing
Tape Reel
Tape Reel
MARKING
SOT-89
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
TO-252
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
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
BVCBO
20
V
Collector to Emitter Voltage
BVCEO
15
V
Emitter to Base Voltage
BVEBO
5
V
Collector Current
IC
6
A
Collector Current (Pulse)
ICP
9
A
Base Current
IB
600
mA
Collector Dissipation (TC=25°C)
PC
3.5
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Turn-on Time
Storage Time
Fall Time
SYMBOL
TEST CONDITIONS
BVCBO IC=10μA, IE=0
BVCEO IC=1mA, RBE=∞
BVEBO IE=10μA, IC=0
IC=1.5A, IB=30mA
VCE(SAT)
IC=3A, IB=60mA
VBE(SAT) IC=1.5A, IB=30mA
ICBO
VCB=12V, IE=0
IEBO
VEB=4V, IC=0
hFE
VCE=0.5V, IC=5A
fT
VCE=2V, IC=500mA
Cob
VCB=10V, f=1MHz
tON
Refer to Test Circuit
tSTG
Refer to Test Circuit
tF
Refer to Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
20
15
5
TYP
MAX
180
300
1.2
0.1
0.1
UNIT
V
V
V
mV
mV
V
µA
µA
50
50
250
25
MHz
pF
ns
ns
ns
250
100
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
NPN SILICON TRANSISTOR
TEST CIRCUIT
PW=20µs
D.C.≤1%
IB1
IB2
OUTPUT
INPUT
VR
RB
RL
50Ω
100µF
470µF
VBE=-5V
VCC=5V
20IB1=-20IB2=IC=1.5A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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DC Current Gain, hFE
Collector Current, IC (A)
TYPICAL CHARACTERISTICS
Base-to-Emitter
Saturation Voltage, VBE(SAT) (V)
Collector-to-Emitter
Saturation Voltage, VCE(SAT) (mV)

NPN SILICON TRANSISTOR
VCE(SAT) vs. IC
1000
6
IC/IB=50
Ta=25°C
4
2
100
6
4
2
10
5
0.01
0.1
1.0
Collector Current, IC (A)
10
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www.unisonic.com.tw
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NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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