MICROCHIP MCP6564T-E/SL

MCP6561/1R/1U/2/4
1.8V Low Power Push-Pull Output Comparator
Features
Description
• Propagation Delay at 1.8VDD:
- 56 ns (typical) High to Low
- 49 ns (typical) Low to High
• Low Quiescent Current: 100 µA (typical)
• Input Offset Voltage: ±3 mV (typical)
• Rail-to-Rail Input: VSS - 0.3V to VDD + 0.3V
• CMOS/TTL Compatible Output
• Wide Supply Voltage Range: 1.8V to 5.5V
• Available in Single, Dual, and Quad
• Packages: SC70-5, SOT-23-5, SOIC, MSOP,
TSSOP
The Microchip Technology, Inc. MCP6561/1R/1U/2/4
families of CMOS/TTL compatible comparators are
offered in single, dual, and quad configurations.
Typical Applications
This family operates with single supply voltage of 1.8V
to 5.5V while drawing less than 100 µA/comparator of
quiescent current (typical).
•
•
•
•
•
•
•
Laptop computers
Mobile Phones
Hand-held Electronics
RC Timers
Alarm and Monitoring Circuits
Window Comparators
Multi-vibrators
These comparators are optimized for low power 1.8V,
single-supply applications with greater than rail-to-rail
input operation. The internal input hysteresis eliminates
output switching due to internal input noise voltage,
reducing current draw. The push-pull output of the
MCP6561/1R/1U/2/4 family supports rail-to-rail output
swing, and interfaces with CMOS/TTL logic. The output
toggle frequency can reach a typical of 4 MHz (typical)
while limiting supply current surges and dynamic power
consumption during switching.
Package Types
MCP6561
SOT-23-5, SC70-5
-
Design Aids
4 -IN
+IN 3
• Microchip Advanced Part Selector (MAPS)
• Analog Demonstration and Evaluation Boards
• Application Notes
MCP6561R
OUTA 1
4 -IN
-INA 2
+INA 3
-
+IN 3
5 VSS
-
VIN+ 1
VSS 2
VIN– 3
+
MCP656X
R2
R3
+ -
-INB 6
OUTB 7
13 -IND
12 +IND
11 VSS
10 +INC
+INB 5
MCP6561U
SOT-23-5
VOUT
6 -INB
5 +INB
14 OUTD
- +
VDD 4
VDD
VDD
+ -
SOIC, TSSOP
Typical Application
VIN
7 OUTB
- +
MCP6564
SOT-23-5
+
• Open-Drain Output: MCP6566/6R/6U/7/9
-INA 2
+INA 3
VSS 4
OUT 1
VDD 2
Related Devices
8 VDD
5 VDD OUTA 1
+
OUT 1
VSS 2
MCP6562
SOIC, MSOP
- +
+ -
9 -INC
8 OUTC
5 VDD
4 OUT
RF
© 2009 Microchip Technology Inc.
DS22139B-page 1
MCP6561/1R/1U/2/4
NOTES:
DS22139B-page 2
© 2009 Microchip Technology Inc.
MCP6561/1R/1U/2/4
1.0
ELECTRICAL
CHARACTERISTICS
1.1
Maximum Ratings*
*Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may
affect device reliability.
VDD - VSS ....................................................................... 6.5V
All other inputs and outputs............VSS - 0.3V to VDD + 0.3V
Difference Input voltage ......................................|VDD - VSS|
Output Short Circuit Current .................................... ±25 mA
Current at Input Pins .................................................. ±2 mA
Current at Output and Supply Pins .......................... ±50 mA
Storage temperature ................................... -65°C to +150°C
Ambient temp. with power applied .............. -40°C to +125°C
Junction temp............................................................ +150°C
ESD protection on all pins (HBM/MM)..................≥ 4 kV/300V
DC CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated: VDD = +1.8V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD/2, VIN- = VSS,
RL = 10 kΩ to VDD/2 (see Figure 1-1).
Parameters
Symbol
Min
Typ
Max
Units
Conditions
VDD
1.8
—
5.5
V
IQ
60
100
130
µA
IOUT = 0
PSRR
63
70
—
dB
VCM = VSS
+10
mV
VCM = VSS (Note 1)
—
µV/°C
—
pA
VCM = VSS
—
pA
TA = +25°C, VIN- = VDD/2
Power Supply
Supply Voltage
Quiescent Current per comparator
Power Supply Rejection Ratio
Input
Input Offset Voltage
Input Offset Drift
Input Offset Current
Input Bias Current
VOS
-10
ΔVOS/ΔT
—
IOS
—
±3
±2
±1
IB
—
1
—
60
—
pA
TA = +85°C, VIN- = VDD/2
—
1500
5000
pA
TA = +125°C, VIN- = VDD/2
VCM = VSS (Notes 1, 2)
VHYST
1.0
—
5.0
mV
Input Hysteresis Linear Temp. Co.
TC1
—
10
—
µV/°C
Input Hysteresis Quadratic Temp.
Co.
TC2
—
0.3
—
µV/°C2
Input Hysteresis Voltage
Common-Mode Input Voltage
Range
VCMR
Common-Mode Rejection Ratio
CMRR
VCM = VSS
VSS−0.2
—
VDD+0.2
V
VSS−0.3
—
VDD+0.3
V
VDD = 5.5V
54
66
—
dB
VCM= -0.3V to VDD+0.3V, VDD = 5.5V
VDD = 1.8V
50
63
—
dB
VCM= VDD/2 to VDD+0.3V, VDD = 5.5V
54
65
—
dB
VCM= -0.3V to VDD/2, VDD = 5.5V
Common Mode Input Impedance
ZCM
—
1013||4
—
Ω||pF
Differential Input Impedance
ZDIFF
—
1013||2
—
Ω||pF
High Level Output Voltage
VOH
VDD−0.7
—
—
V
IOUT = -3 mA/-8 mA with VDD = 1.8V/5.5V
(Note 3)
Low Level Output Voltage
VOL
—
—
0.6
V
IOUT = 3 mA/8 mA with VDD = 1.8V/5.5V
(Note 3)
ISC
—
±30
—
mA
COUT
—
8
—
pF
Push-Pull Output
Short Circuit Current
Output Pin Capacitance
Note 1:
2:
3:
Note 3
The input offset voltage is the center of the input-referred trip points. The input hysteresis is the difference between the
input-referred trip points.
VHYST at different temperatures is estimated using VHYST (TA) = VHYST @ +25°C + (TA - 25°C) TC1 + (TA - 25°C)2 TC2.
Limit the output current to Absolute Maximum Rating of 50 mA.
© 2009 Microchip Technology Inc.
DS22139B-page 3
MCP6561/1R/1U/2/4
AC CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated: VDD = +1.8V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD/2, VIN- = VSS,
RL = 10 kΩ to VDD/2, and CL = 25 pF. (see Figure 1-1).
Parameters
Symbol
Min
Typ
Max
Units
Conditions
High-to-Low,100 mV Overdrive
tPHL
—
56
80
ns
—
34
80
ns
VCM= VDD/2, VDD = 5.5V
Low-to-High, 100 mV Overdrive
tPLH
—
49
80
ns
VCM= VDD/2, VDD = 1.8V
—
47
80
ns
VCM= VDD/2, VDD = 5.5V
Skew 1
tPDS
—
±10
—
ns
Rise Time
tR
—
20
—
ns
Fall Time
tF
—
20
—
ns
Maximum Toggle Frequency
fTG
—
4
—
MHz
VDD = 5.5V
—
2
—
MHz
VDD = 1.8V
Input Voltage Noise 2
ENI
—
350
—
µVP-P
10 Hz to 10 MHz
Propagation Delay
VCM= VDD/2, VDD = 1.8V
Output
Propagation Delay Skew is defined as: tPDS = tPLH - tPHL.
ENI is based on SPICE simulation.
Note 1:
2:
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated: VDD = +1.8V to +5.5V and VSS = GND.
Parameters
Symbol
Min
Typ
Max
Units
Conditions
Temperature Ranges
Specified Temperature Range
TA
-40
—
+125
°C
Operating Temperature Range
TA
-40
—
+125
°C
Storage Temperature Range
TA
-65
—
+150
°C
Thermal Resistance, SC70-5
θJA
—
331
—
°C/W
Thermal Resistance, SOT-23-5
θJA
—
220.7
—
°C/W
Thermal Resistance, 8L-SOIC
θJA
—
149.5
—
°C/W
Thermal Resistance, 8L-MSOP
θJA
—
211
—
°C/W
Thermal Resistance, 14L-SOIC
θJA
—
95.3
—
°C/W
Thermal Resistance, 14L-TSSOP
θJA
—
100
—
°C/W
Thermal Package Resistances
1.2
Test Circuit Configuration
This test circuit configuration is used to determine the
AC and DC specifications.
VDD
MCP656X
200 kΩ
IOUT
200 kΩ
200 kΩ
VIN = VSS
200 kΩ
VOUT
25 pF
VSS = 0V
FIGURE 1-1:
AC and DC Test Circuit for
the Push-Pull Output Comparators.
DS22139B-page 4
© 2009 Microchip Technology Inc.
MCP6561/1R/1U/2/4
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, VDD = +1.8V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD/2, VIN– = GND,
RL = 10 kΩ to VDD/2, and CL = 25 pF.
30%
40%
30%
VDD = 5.5V
VCM = VSS
Avg. = -0.9 mV
StDev = 2.1 mV
3588 units
VDD = 1.8V
VCM = VSS
Avg. = -0.1 mV
StDev = 2.1 mV
3588 units
Occurrences (%)
Occurrences (%)
50%
20%
10%
-6
FIGURE 2-1:
-4
-2 0
2
VOS (mV)
4
6
8
10%
10
Input Offset Voltage.
1.0
1.5
2.0
FIGURE 2-4:
60%
2.5 3.0 3.5
VHYST (mV)
4.0
4.5
5.0
Input Hysteresis Voltage.
60%
VCM = VSS
Avg. = 0.9 µV/°C
StDev = 6.6 µV/°C
1380 Units
TA = -40°C to +125°C
Occurrences (%)
Occurrences (%)
15%
0%
-10 -8
40%
20%
VDD = 5.5V
Avg. = 3.6 mV
StDev = 0.1 mV
3588 units
5%
0%
50%
VDD = 1.8V
Avg. = 3.4 mV
StDev = 0.2 mV
3588 units
25%
30%
20%
10%
0%
VDD = 5.5V
Avg. = 10.4 µV/°C
StDev = 0.6 µV/°C
50%
40%
VDD = 1.8V
Avg. = 12 µV/°C
StDev = 0.6 µV/°C
30%
20%
1380 Units
TA = -40°C to 125°C
VCM = VSS
10%
0%
-60 -48 -36 -24 -12 0 12 24
VOS Drift (µV/°C)
FIGURE 2-2:
36
48
60
Input Offset Voltage Drift.
0
4
6
8 10 12 14 16
VHYST Drift, TC1 (µV/°C)
18
20
FIGURE 2-5:
Input Hysteresis Voltage
Drift - Linear Temp. Co. (TC1).
7.0
VDD = 5.5V
2
30%
VIN+ = VDD /2
VOUT (V)
5.0
4.0
VOUT
VIN -
3.0
2.0
1.0
0.0
VDD = 5.5V
Time (3 µs/div)
Input vs. Output Signal, No
© 2009 Microchip Technology Inc.
VDD = 1.8V
2
20%
10%
Avg. = 0.25 µV/°C
StDev = 0.1 µV/°C2
2
Avg. = 0.3 µV/°C
StDev = 0.2 µV/°C2
1380 Units
TA = -40°C to +125°C
VCM = VSS
0%
-0.50
-1.0
FIGURE 2-3:
Phase Reversal.
Occurrences (%)
6.0
-0.25
0.00
0.25
0.50
0.75
VHYST Drift, TC2 (µV/°C2)
1.00
FIGURE 2-6:
Input Hysteresis Voltage
Drift - Quadratic Temp. Co. (TC2).
DS22139B-page 5
MCP6561/1R/1U/2/4
Note: Unless otherwise indicated, VDD = +1.8V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD/2, VIN– = GND,
RL = 10 kΩ to VDD/2, and CL = 25 pF.
3.0
5.0
VCM = VSS
VCM = VSS
VDD= 1.8V
2.0
VHYST (mV)
V OS (mV)
4.0
1.0
0.0
-1.0
3.0
VDD = 1.8V
2.0
VDD= 5.5V
-2.0
VDD= 5.0V
-3.0
1.0
-50
-25
0
FIGURE 2-7:
Temperature.
25
50
75
Temperature (°C)
100
125
Input Offset Voltage vs.
-50
-25
0
FIGURE 2-10:
Temperature.
4.0
25
50
75
Temperature (°C)
100
125
Input Hysteresis Voltage vs.
5.0
VDD = 1.8V
TA= +125°C
TA= +125°C
4.0
TA= +85°C
VHYST (mV)
VOS (mV)
2.0
0.0
TA= +25°C
TA= -40°C
-2.0
3.0
TA= +25°C
2.0
TA= +85°C
VDD = 1.8V
-4.0
-0.3
0.0
0.3
0.6
0.9 1.2
VCM (V)
1.5
1.8
1.0
-0.3
2.1
FIGURE 2-8:
Input Offset Voltage vs.
Common-mode Input Voltage.
0.0
TA= -40°C
0.3
0.6
0.9
1.2
VCM (V)
1.5
1.8
2.1
FIGURE 2-11:
Input Hysteresis Voltage vs.
Common-mode Input Voltage.
3.0
5.0
VDD = 5.5V
4.0
TA= -40°C
1.0
VHYST (mV)
VOS (mV)
2.0
TA= +25°C
0.0
-1.0
-3.0
-1.0
TA= -40°C
TA= +25°C
TA= +85°C
TA= +125°C
2.0
TA= +85°C
-2.0
3.0
TA= +125°C
0.0
1.0
2.0
3.0
VCM (V)
4.0
5.0
FIGURE 2-9:
Input Offset Voltage vs.
Common-mode Input Voltage.
DS22139B-page 6
6.0
1.0
-0.5
0.5
1.5
VDD = 5.5V
2.5
3.5
VCM (V)
4.5
5.5
FIGURE 2-12:
Input Hysteresis Voltage vs.
Common-mode Input Voltage.
© 2009 Microchip Technology Inc.
MCP6561/1R/1U/2/4
Note: Unless otherwise indicated, VDD = +1.8V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD/2, VIN– = GND,
RL = 10 kΩ to VDD/2, and CL = 25 pF.
5.0
3.0
TA= +125°C
0.0
TA= +85°C
4.0
TA= -40°C
TA= +25°C
TA= +85°C
TA= +125°C
1.0
VHYST (mV)
VOS (mV)
2.0
-1.0
TA= +25°C
3.0
TA= -40°C
2.0
-2.0
-3.0
1.0
1.5
2.5
3.5
VDD (V)
4.5
1.5
5.5
FIGURE 2-13:
Input Offset Voltage vs.
Supply Voltage vs. Temperature.
4.5
5.5
140.0
VDD = 5.5V
Avg. = 97 µA
StDev= 4 µA
1794 units
VDD = 1.8V
Avg. = 88 µA
StDev= 4 µA
1794 units
40%
30%
20%
120.0
100.0
IQ (µA)
Occurrences (%)
3.5
V DD (V)
FIGURE 2-16:
Input Hysteresis Voltage vs.
Supply Voltage vs. Temperature.
50%
80.0
60.0
TA= -40°C
TA= +25°C
TA= +85°C
TA= +125°C
40.0
10%
20.0
0%
0.0
60
70
FIGURE 2-14:
80
90
100
IQ (µA)
110
120
130
Quiescent Current.
0.0
2.0
3.0
V DD (V)
4.0
5.0
6.0
130
VDD = 1.8V
VDD = 5.5V
120
120
110
IQ (µA)
110
100
Sweep VIN+ ,VIN- = VDD /2
90
80
Sweep VIN - ,VIN+ = VDD/2
V /2
70
60
-0.5
1.0
FIGURE 2-17:
Quiescent Current vs.
Supply Voltage vs Temperature.
130
IQ (µA)
2.5
Sweep VIN+ ,VIN- = VDD/2
100
90
Sweep VIN- ,VIN+ = VDD/2
80
70
0.0
0.5
1.0
VCM (V)
1.5
2.0
FIGURE 2-15:
Quiescent Current vs.
Common-mode Input Voltage.
© 2009 Microchip Technology Inc.
2.5
60
-1.0
0.0
1.0
2.0
3.0
VCM (V)
4.0
5.0
6.0
FIGURE 2-18:
Quiescent Current vs.
Common-mode Input Voltage.
DS22139B-page 7
MCP6561/1R/1U/2/4
Note: Unless otherwise indicated, VDD = +1.8V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD/2, VIN– = GND,
RL = 10 kΩ to VDD/2, and CL = 25 pF.
400
350
TA= -40°C
TA= +25°C
TA= +85°C
TA= +125°C
80
300
VDD = 5.5V
ISC (mA)
IQ (µA)
120
0dB Output Attenuation
100 mV Over-Drive
VCM = VDD/2
RL = Open
250
200
VDD = 1.8V
40
0
-40
TA= -40°C
TA= +25°C
TA= +85°C
TA= +125°C
150
-80
100
-120
50
10
10
100
100
0.0
1k
10k 100000
100k 100000
1M
10M
1000
10000
1E+07
Toggle Frequency (Hz)
0
FIGURE 2-19:
Quiescent Current vs.
Toggle Frequency.
VOL, VDD - VOH (mV)
VOL, VDD - VOH (mV)
4.0
5.0
6.0
VDD= 5.5V
VDD - VOH
800
VOL
600
TA = +125°C
TA = +85°C
TA = +25°C
TA = -40°C
400
200
1200
VDD - VOH
TA = 125°C
TA = 85°C
TA = 25°C
TA = -40°C
1000
800
600
400
200
0
VOL
0
3.0
FIGURE 2-20:
Current.
6.0
9.0
IOUT (mA)
12.0
Output Headroom Vs Output
50%
tPLH
Avg. = 47 ns
StDev= 2 ns
198 units
VDD = 1.8V
100 mV Over-Drive
VCM = VDD /2
0
15.0
5
FIGURE 2-23:
Current.
10
15
IOUT (mA)
20
25
Output Headroom Vs Output
50%
Occurrences (%)
0.0
Occurrences (%)
3.0
VDD (V)
1400
VDD= 1.8V
30%
2.0
FIGURE 2-22:
Short Circuit Current vs.
Supply Voltage vs. Temperature.
1000
40%
1.0
tPHL
Avg. = 54.4 ns
StDev= 2 ns
198 units
20%
10%
0%
tPHL
Avg. = 33 ns
StDev= 1 ns
198 units
40%
VDD= 5.5V
100mV Over-Drive
VCM = VDD /2
30%
tPLH
Avg. = 44.6 ns
StDev= 2.7 ns
198 units
20%
10%
0%
30
35
40
45
50
55
60
65
70
75
80
Prop. Delay (ns)
FIGURE 2-21:
Low-to-High and High-toLow Propagation Delays.
DS22139B-page 8
30
35
40
45
50
55
60
65
70
75
80
Prop. Delay (ns)
FIGURE 2-24:
Low-to-High and High-toLow Propagation Delays .
© 2009 Microchip Technology Inc.
MCP6561/1R/1U/2/4
Note: Unless otherwise indicated, VDD = +1.8V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD/2, VIN– = GND,
RL = 10 kΩ to VDD/2, and CL = 25 pF.
80
100 mV Over-Drive
VCM = VDD/2
40%
VDD = 1.8V
Avg. = -7.3 ns
StDev= 0.8 ns
198 units
30%
VDD = 5.5V
Avg. = 11.6 ns
StDev= 2 ns
198 units
20%
100 mV Over-Drive
VCM = VDD /2
70
Prop. Delay (ns)
Occurrences (%)
50%
10%
tPLH , VDD = 1.8V
tPHL
tPHL , VDD = 1.8V
60
50
40
tPLH , VDD = 5.5V
tPHL , VDD = 5.5V
30
0%
20
-20
-15
-10
-5
0
5
10
15
20
-50
-25
Prop. Delay Skew (ns)
FIGURE 2-25:
Propagation Delay Skew.
0
25
50
75
Temperature (°C)
FIGURE 2-28:
Temperature.
Propagation Delay vs.
VCM = VDD/2
120
tPHL , 10 mV Over-Drive
tPLH , 10 mV Over-Drive
Prop. Delay (ns)
Prop. Delay (ns)
VCM = VDD/2
100
80
tPHL , 100 mV Over-Drive
tPLH , 100 mV Over-Drive
60
40
20
210
tPLH , VDD = 1.8V
tPHL , VDD = 1.8V
160
tPLH , VDD = 5.5V
tPHL , VDD = 5.5V
110
60
10
1.5
2.5
FIGURE 2-26:
Supply Voltage.
3.5
V DD (V)
4.5
5.5
1
Propagation Delay vs.
FIGURE 2-29:
Over-Drive.
100
1000
Propagation Delay vs. Input
80
VDD = 1.8V
100 mV Over-Drive
tPLH
Prop. Delay (ns)
tPHL
70
60
50
40
30
20
0.00
10
Over-Drive (mV)
80
Prop. Delay (ns)
125
260
140
70
100
VDD= 5.5V
100 mV Over-Drive
60
tPHL
tPLH
50
40
30
20
0.50
1.00
VCM (V)
1.50
FIGURE 2-27:
Propagation Delay vs.
Common-mode Input Voltage.
© 2009 Microchip Technology Inc.
2.00
0.0
1.0
2.0
3.0
VCM (V)
4.0
5.0
6.0
FIGURE 2-30:
Propagation Delay vs.
Common-mode Input Voltage.
DS22139B-page 9
MCP6561/1R/1U/2/4
Note: Unless otherwise indicated, VDD = +1.8V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD/2, VIN– = GND,
RL = 10 kΩ to VDD/2, and CL = 25 pF.
1000
30%
VDD = 1.8V, tPLH
VDD = 1.8V, tPHL
Occurrences (%)
Prop. Delay (µs)
100
100mV Over-Drive
VCM = VDD/2
10
VDD = 5.5V, tPLH
VDD = 5.5V, tPHL
1
0.1
20%
15%
10%
5%
0.01
0.001
1
0%
0.01
10
0.1
1
10
10
1000
100
1000
10000
100000
1E+06
Capacitive Load (nf)
FIGURE 2-31:
Capacitive Load.
Propagation Delay vs.
-600
-400
-200
FIGURE 2-34:
Ratio (PSRR).
Occurrences (%)
10µ
1E+07
100n
1E+05
TA= -40°C
TA= +25°C
TA= +85°C
TA= +125°C
1n
1E+03
10p
1E+01
0.1p
1E-01
-0.8
-0.4
-0.2
20%
10%
0
VCM = -0.2V to VDD /2
Avg. = 0.5 mV
StDev= 0.1 mV
-5
VDD = 1.8V
3588 units
-4
-3
-2
-1
FIGURE 2-35:
Ratio (CMRR).
30%
Input Referred
78
Occurrences (%)
VCM = VSS
VDD = 1.8V to 5.5V
PSRR
CMRR
72
VCM = -0.3V to VDD + 0.3V
VDD = 5.5V
70
-25
0
25
50
75
Temperature (°C)
100
125
FIGURE 2-33:
Common-mode Rejection
Ratio and Power Supply Rejection Ratio vs.
Temperature.
DS22139B-page 10
0
1
2
3
4
5
CMRR (mV/V)
80
CMRR/PSRR (dB)
600
0%
-0.6
FIGURE 2-32:
Input Bias Current vs. Input
Voltage vs Temperature.
-50
400
VCM = -0.2V to VDD + 0.2V
Avg. = 0.6 mV
StDev= 0.1 mV
VCM = VDD/2 to VDD + 0.2V
Avg. = 0.7 mV
StDev= 1 mV
Input Voltage (V)
74
200
Power Supply Rejection
30%
1E+09
1m
76
0
PSRR (µV/V)
10m
1E+11
Input Current (A)
VCM = VSS
Avg. = 200 µV/V
StDev= 94 µV/V
3588 units
25%
Common-mode Rejection
V CM = V DD/2 to VDD+ 0.3V
Avg. = 0.03 mV
StDev= 0.7 mV
VCM = -0.3V to V DD + 0.3V
Avg. = 0.1 mV
StDev= 0.4 mV
20%
10%
VCM = -0.3V to VDD/2
Avg. = 0.2 mV
StDev= 0.4 mV
VDD = 5.5V
3588 units
0%
-2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 2.5
CMRR (mV/V)
FIGURE 2-36:
Ratio (CMRR).
Common-mode Rejection
© 2009 Microchip Technology Inc.
MCP6561/1R/1U/2/4
Note: Unless otherwise indicated, VDD = +1.8V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD/2, VIN– = GND,
RL = 10 kΩ to VDD/2, and CL = 25 pF.
10000
1000
VDD = 5.5V
IB @ TA=
VDD = 5.5V
1000
VIN+ = 2Vpp (sine)
IOS and IB (pA)
Output Jitter pk-pk (ns)
10000
100
10
1
IB @ TA=
100
10
1
|IOS| @ TA= 125°C
0.1
|IOS |@ TA= 85°C
0.01
0.001
0.1
100
100
1k
1000
10M
10k
100k
1M
10000 100000 1000000 1E+07
Input Frequency (Hz)
FIGURE 2-37:
Frequency.
Output Jitter vs. Input
0
1
2
3
V CM (V)
4
5
6
FIGURE 2-39:
Input Offset Current and
Input Bias Current vs. Common-mode Input
Voltage Vs Temperature.
IOS and IB (pA)
1000
100
IB
10
1
|I OS|
0.1
25
50
75
100
Temperature (°C)
125
FIGURE 2-38:
Input Offset Current and
Input Bias Current vs. Temperature.
© 2009 Microchip Technology Inc.
DS22139B-page 11
MCP6561/1R/1U/2/4
NOTES:
DS22139B-page 12
© 2009 Microchip Technology Inc.
MCP6561/1R/1U/2/4
3.0
PIN DESCRIPTIONS
Descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
MCP6561
MCP6561U
MCP6562
MCP6564
SOT-23-5
SOT-23-5
MSOP,
SOIC
SOIC,
TSSOP
1
1
4
1
1
4
4
3
2
2
VIN–, VINA– Inverting Input (comparator A)
3
3
1
3
3
VIN+, VINA+ Non-inverting Input (comparator A)
5
2
5
8
4
VDD
—
—
—
5
5
VINB+
Non-inverting Input (comparator B)
—
—
—
6
6
VINB–
Inverting Input (comparator B)
—
—
—
7
7
OUTB
Digital Output (comparator B)
—
—
—
—
8
OUTC
Digital Output (comparator C)
—
—
—
—
9
VINC–
Inverting Input (comparator C)
—
—
—
—
10
VINC+
Non-inverting Input (comparator C)
SC70-5,
SOT-23-5
3.1
PIN FUNCTION TABLE
MCP6561R
Description
OUT, OUTA Digital Output (comparator A)
Positive Power Supply
2
5
2
4
11
VSS
—
—
—
—
12
VIND+
Non-inverting Input (comparator D)
—
—
—
—
13
VIND–
Inverting Input (comparator D)
—
—
—
—
14
OUTD
Digital Output (comparator D)
Analog Inputs
The comparator non-inverting and inverting inputs are
high-impedance CMOS inputs with low bias currents.
3.2
Symbol
Digital Outputs
The comparator outputs are CMOS, push-pull digital
outputs. They are designed to be compatible with
CMOS and TTL logic and are capable of driving heavy
DC or capacitive loads.
© 2009 Microchip Technology Inc.
3.3
Negative Power Supply
Power Supply (VSS and VDD)
The positive power supply pin (VDD) is 1.8V to 5.5V
higher than the negative power supply pin (VSS). For
normal operation, the other pins are at voltages
between VSS and VDD.
Typically, these parts are used in a single (positive)
supply configuration. In this case, VSS is connected to
ground and VDD is connected to the supply. VDD will
need a local bypass capacitor (typically 0.01 µF to
0.1 µF) within 2 mm of the VDD pin. These can share a
bulk capacitor with nearby analog parts (within
100 mm), but it is not required.
DS22139B-page 13
MCP6561/1R/1U/2/4
NOTES:
DS22139B-page 14
© 2009 Microchip Technology Inc.
MCP6561/1R/1U/2/4
4.0
APPLICATIONS INFORMATION
The MCP6561/1R/1U/2/4 family of push-pull output
comparators are fabricated on Microchip’s state-of-theart CMOS process. They are suitable for a wide range
of high speed applications requiring low power
consumption.
4.1
Comparator Inputs
4.1.1
NORMAL OPERATION
The input stage of this family of devices uses three
differential input stages in parallel: one operates at low
input voltages, one at high input voltages, and one at
mid input voltage. With this topology, the input voltage
range is 0.3V above VDD and 0.3V below VSS, while
providing low offset voltage through out the common
mode range. The input offset voltage is measured at
both VSS - 0.3V and VDD + 0.3V to ensure proper
operation.
8
7
6
5
4
3
2
1
0
-1
-2
-3
VDD = 5.0V
VIN–
VOUT
Hysteresis
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
Input Voltage (10 mV/div)
Output Voltage (V)
The MCP6561/1R/1U/2/4 family has internally-set
hysteresis VHYST that is small enough to maintain input
offset accuracy and large enough to eliminate output
chattering caused by the comparator’s own input noise
voltage ENI. Figure 4-1 depicts this behavior. Input
offset voltage (VOS) is the center (average) of the
(input-referred) low-high and high-low trip points. Input
hysteresis voltage (VHYST) is the difference between
the same trip points.
4.1.2
INPUT VOLTAGE AND CURRENT
LIMITS
The ESD protection on the inputs can be depicted as
shown in Figure 4-2. This structure was chosen to
protect the input transistors, and to minimize input bias
current (IB). The input ESD diodes clamp the inputs
when they try to go more than one diode drop below
VSS. They also clamp any voltages that go too far
above VDD; their breakdown voltage is high enough to
allow normal operation, and low enough to bypass ESD
events within the specified limits.
VDD Bond
Pad
VIN+ Bond
Pad
VSS
VIN–
Bond
Pad
FIGURE 4-2:
Structures.
Simplified Analog Input ESD
In order to prevent damage and/or improper operation
of these amplifiers, the circuits they are in must limit the
currents (and voltages) at the VIN+ and VIN– pins (see
Maximum Ratings* at the beginning of Section 1.0
“Electrical Characteristics”). Figure 4-3 shows the
recommended approach to protecting these inputs.
The internal ESD diodes prevent the input pins (VIN+
and VIN–) from going too far below ground, and the
resistors R1 and R2 limit the possible current drawn out
of the input pin. Diodes D1 and D2 prevent the input pin
(VIN+ and VIN–) from going too far above VDD. When
implemented as shown, resistors R1 and R2 also limit
the current through D1 and D2.
VDD
Time (100 ms/div)
FIGURE 4-1:
The MCP6561/1R/1U/2/4
comparators’ internal hysteresis eliminates
output chatter caused by input noise voltage.
Bond
Pad
Input
Stage
D1
+
V1
R1
MCP656X
–
VOUT
D2
V2
R2
R1 ≥
VSS – (minimum expected V1)
2 mA
R2 ≥
VSS – (minimum expected V2)
2 mA
FIGURE 4-3:
Inputs.
© 2009 Microchip Technology Inc.
R3
Protecting the Analog
DS22139B-page 15
MCP6561/1R/1U/2/4
It is also possible to connect the diodes to the left of the
resistors R1 and R2. In this case, the currents through
the diodes D1 and D2 need to be limited by some other
mechanism. The resistor then serves as in-rush current
limiter; the DC current into the input pins (VIN+ and
VIN–) should be very small.
4.3.1
Figure 4-4 shows a non-inverting circuit for singlesupply applications using just two resistors. The
resulting hysteresis diagram is shown in Figure 4-5.
VDD
A significant amount of current can flow out of the
inputs when the common mode voltage (VCM) is below
ground (VSS); see Figure 2-32. Applications that are
high impedance may need to limit the usable voltage
range.
4.1.3
VOUT
MCP656X
+
VIN
R1
Externally Set Hysteresis
Greater flexibility in selecting hysteresis (or input trip
points) is achieved by using external resistors.
Hysteresis reduces output chattering when one input is
slowly moving past the other. It also helps in systems
where it is best not to cycle between high and low
states too frequently (e.g., air conditioner thermostatic
control). Output chatter also increases the dynamic
supply current.
RF
FIGURE 4-4:
Non-Inverting Circuit with
Hysteresis for Single-Supply.
Push-Pull Output
The push-pull output is designed to be compatible with
CMOS and TTL logic, while the output transistors are
configured to give rail-to-rail output performance. They
are driven with circuitry that minimizes any switching
current (shoot-through current from supply-to-supply)
when the output is transitioned from high-to-low, or
from low-to-high (see Figure 2-15 and Figure 2-18 for
more information).
4.3
-
VREF
PHASE REVERSAL
The MCP6561/1R/1U/2/4 comparator family uses
CMOS transistors at the input. They are designed to
prevent phase inversion when the input pins exceed
the supply voltages. Figure 2-3 shows an input voltage
exceeding both supplies with no resulting phase
inversion.
4.2
NON-INVERTING CIRCUIT
VOUT
VDD
VOH
High-to-Low
Low-to-High
VIN
VOL
VSS
VSS
VTHL VTLH
VDD
FIGURE 4-5:
Hysteresis Diagram for the
Non-Inverting Circuit.
The trip points for Figure 4-4 and Figure 4-5 are:
EQUATION 4-1:
R ⎞
⎛
⎛R 1 ⎞
V TLH = V REF ⎜ 1 + ------1- ⎟ – V OL ⎜------- ⎟
RF ⎠
⎝
⎝R F ⎠
R ⎞
⎛
⎛R1 ⎞
V THL = V REF ⎜ 1 + ------1- ⎟ – V OH ⎜------- ⎟
RF ⎠
⎝
⎝R F ⎠
Where:
DS22139B-page 16
VTLH
=
trip voltage from low to high
VTHL
=
trip voltage from high to low
© 2009 Microchip Technology Inc.
MCP6561/1R/1U/2/4
4.3.2
INVERTING CIRCUIT
Where:
Figure 4-6 shows an inverting circuit for single-supply
using three resistors. The resulting hysteresis diagram
is shown in Figure 4-7.
R2 R3
R 23 = -----------------R2 + R3
R3
V 23 = ------------------- × V DD
R2 + R3
VDD
VIN
VDD
MCP656X
Using this simplified circuit, the trip voltage can be
calculated using the following equation:
VOUT
R2
EQUATION 4-2:
RF
⎛ R 23 ⎞
V THL = V OH ⎜ -----------------------⎟ + V 23 ⎛ ----------------------⎞
⎝
⎠
R
+
R
R
⎝ 23
23 + R F
F⎠
RF
R3
FIGURE 4-6:
Hysteresis.
RF
⎛ R 23 ⎞
V TLH = V OL ⎜ -----------------------⎟ + V 23 ⎛ ----------------------⎞
⎝
⎠
R
+
R
R
⎝ 23
23 + R F
F⎠
Where:
Inverting Circuit With
VOUT
VTLH
=
trip voltage from low to high
VTHL
=
trip voltage from high to low
Figure 2-20, and Figure 2-23 can be used to determine
typical values for VOH and VOL.
VDD
VOH
Low-to-High
High-to-Low
4.4
VIN
VOL
VSS
VSS
VTLH VTHL
FIGURE 4-7:
Inverting Circuit.
VDD
Hysteresis Diagram for the
In order to determine the trip voltages (VTHL and VTLH)
for the circuit shown in Figure 4-6, R2 and R3 can be
simplified to the Thevenin equivalent circuit with
respect to VDD, as shown in Figure 4-8.
VDD
Bypass Capacitors
With this family of comparators, the power supply pin
(VDD for single supply) should have a local bypass
capacitor (i.e., 0.01 µF to 0.1 µF) within 2 mm for good
edge rate performance.
4.5
Capacitive Loads
Reasonable capacitive loads (e.g., logic gates) have
little impact on propagation delay (see Figure 2-31).
The supply current increases with increasing toggle
frequency (Figure 2-19), especially with higher
capacitive loads. The output slew rate and propagation
delay performance will be reduced with higher
capacitive loads.
MCP656X
+
VOUT
VSS
V23
R23
FIGURE 4-8:
RF
Thevenin Equivalent Circuit.
© 2009 Microchip Technology Inc.
DS22139B-page 17
MCP6561/1R/1U/2/4
4.6
PCB Surface Leakage
4.7
In applications where low input bias current is critical,
PCB (Printed Circuit Board) surface leakage effects
need to be considered. Surface leakage is caused by
humidity, dust or other contamination on the board.
Under low humidity conditions, a typical resistance
between nearby traces is 1012Ω. A 5V difference would
cause 5 pA of current to flow. This is greater than the
MCP6561/1R/1U/2/4 family’s bias current at +25°C
(1 pA, typical).
The easiest way to reduce surface leakage is to use a
guard ring around sensitive pins (or traces). The guard
ring is biased at the same voltage as the sensitive pin.
An example of this type of layout is shown in
Figure 4-9.
IN-
IN+
VSS
When designing the PCB layout it is critical to note that
analog and digital signal traces are adequately
separated to prevent signal coupling. If the comparator
output trace is at close proximity to the input traces
then large output voltage changes from, VSS to VDD or
visa versa, may couple to the inputs and cause the
device output to oscillate. To prevent such oscillation,
the output traces must be routed away from the input
pins. The SC70-5 and SOT-23-5 are relatively immune
because the output pin OUT (pin 1) is separated by the
power pin VDD/VSS (pin 2) from the input pin +IN (as
long as the analog and digital traces remain separated
through out the PCB). However, the pinouts for the dual
and quad packages (SOIC, MSOP, TSSOP) have OUT
and -IN pins (pin 1 and 2) close to each other. The
recommended layout for these packages is shown in
Figure 4-10.
Guard Ring
FIGURE 4-9:
Example Guard Ring Layout
for Inverting Circuit.
1.
2.
Inverting Configuration (Figures 4-6 and 4-9):
a) Connect the guard ring to the non-inverting
input pin (VIN+). This biases the guard ring
to the same reference voltage as the
comparator (e.g., VDD/2 or ground).
b) Connect the inverting pin (VIN-) to the input
pad without touching the guard ring.
Non-inverting Configuration (Figure 4-4):
a) Connect the non-inverting pin (VIN+) to the
input pad without touching the guard ring.
b) Connect the guard ring to the inverting input
pin (VIN-).
PCB Layout Technique
OUTA
VDD
-INA
OUTB
+INA
-INB
VSS
+INB
FIGURE 4-10:
4.8
Recommended Layout.
Unused Comparators
An unused amplifier in a quad package (MCP6564)
should be configured as shown in Figure 4-11. This
circuit prevents the output from toggling and causing
crosstalk. It uses the minimum number of components
and draws minimal current (see Figure 2-15 and
Figure 2-18).
¼ MCP6564
VDD
–
+
FIGURE 4-11:
DS22139B-page 18
Unused Comparators.
© 2009 Microchip Technology Inc.
MCP6561/1R/1U/2/4
4.9
Typical Applications
4.9.1
4.9.3
PRECISE COMPARATOR
Some applications require higher DC precision. An
easy way to solve this problem is to use an amplifier
(such as the MCP6291) to gain-up the input signal
before it reaches the comparator. Figure 4-12 shows
an example of this approach.
BISTABLE MULTI-VIBRATOR
A simple bistable multi-vibrator design is shown in
Figure 4-14. VREF needs to be between the power
supplies (VSS = GND and VDD) to achieve oscillation.
The output duty cycle changes with VREF.
R1
R2
VREF
VDD
VDD
MCP6291
MCP6561
VREF
VOUT
VDD
VIN
R1
R2
MCP656X
VREF
FIGURE 4-12:
Comparator.
4.9.2
C1
VOUT
FIGURE 4-14:
R3
Bistable Multi-vibrator.
Precise Inverting
WINDOWED COMPARATOR
Figure 4-13 shows one approach to designing a
windowed comparator. The AND gate produces a logic
‘1’ when the input voltage is between VRB and VRT
(where VRT > VRB).
VDD
VRT
VIN
VRB
FIGURE 4-13:
1/2
MCP6562
1/2
MCP6562
Windowed Comparator.
© 2009 Microchip Technology Inc.
DS22139B-page 19
MCP6561/1R/1U/2/4
NOTES:
DS22139B-page 20
© 2009 Microchip Technology Inc.
MCP6561/1R/1U/2/4
5.0
DESIGN AIDS
5.3
5.1
Microchip Advanced Part Selector
(MAPS)
The following Microchip Application Notes are
available
on
the
Microchip
web
site
at
www.microchip.com and are recommended as
supplemental reference resources:
MAPS is a software tool that helps semiconductor
professionals efficiently identify Microchip devices that
fit a particular design requirement. Available at no cost
from the Microchip web site at www.microchip.com/
maps, the MAPS is an overall selection tool for
Microchip’s product portfolio that includes Analog,
Memory, MCUs and DSCs. Using this tool you can
define a filter to sort features for a parametric search of
devices and export side-by-side technical comparison
reports. Helpful links are also provided for Data sheets,
Purchase, and Sampling of Microchip parts.
5.2
Application Notes
• AN895, “Oscillator Circuit For RTD Temperature
Sensors”, DS00895
Analog Demonstration and
Evaluation Boards
Microchip offers a broad spectrum of Analog
Demonstration and Evaluation Boards that are
designed to help you achieve faster time to market. For
a complete listing of these boards and their
corresponding user’s guides and technical information,
visit the Microchip web site at www.microchip.com/
analogtools. Three of our boards that are especially
useful are:
• 8-Pin SOIC/MSOP/TSSOP/DIP Evaluation Board,
P/N SOIC8EV
• 14-Pin SOIC/TSSOP/DIP Evaluation Board,
P/N SOIC14EV
• 5/6-Pin SOT23 Evaluation Board, P/N VSUPEV2
© 2009 Microchip Technology Inc.
DS22139B-page 21
MCP6561/1R/1U/2/4
NOTES:
DS22139B-page 22
© 2009 Microchip Technology Inc.
MCP6561/1R/1U/2/4
6.0
PACKAGING INFORMATION
6.1
Package Marking Information
5-Lead SC-70 (MCP6561)
Example:
BC25
XXNN
5-Lead SOT-23 (MCP6561, MCP6561R, MCP6561U)
Device
XXNN
Example:
Code
MCP6561T
WBNN
MCP6561RT
WANN
MCP6561UT
WKNN
WA25
Note: Applies to 5-Lead SOT-23.
8-Lead MSOP (MCP6562)
XXXXXX
6562E
YWWNNN
933256
8-Lead SOIC (150 mil) (MCP6562)
XXXXXXXX
XXXXYYWW
NNN
Example:
MCP6562E
e3
SN^^0933
256
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
Example:
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
© 2009 Microchip Technology Inc.
DS22139B-page 23
MCP6561/1R/1U/2/4
Package Marking Information (Continued)
14-Lead SOIC (150 mil) (MCP6564)
Example:
XXXXXXXXXX
XXXXXXXXXX
YYWWNNN
14-Lead TSSOP (MCP6564)
MCP6564
E/SL^^
e3
0933256
Example:
XXXXXXXX
MCP6564E
YYWW
0933
NNN
256
DS22139B-page 24
© 2009 Microchip Technology Inc.
MCP6561/1R/1U/2/4
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DS22139B-page 25
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DS22139B-page 27
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DS22139B-page 28
© 2009 Microchip Technology Inc.
MCP6561/1R/1U/2/4
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
© 2009 Microchip Technology Inc.
DS22139B-page 29
MCP6561/1R/1U/2/4
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© 2009 Microchip Technology Inc.
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© 2009 Microchip Technology Inc.
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DS22139B-page 33
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DS22139B-page 34
© 2009 Microchip Technology Inc.
MCP6561/1R/1U/2/4
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
© 2009 Microchip Technology Inc.
DS22139B-page 35
MCP6561/1R/1U/2/4
NOTES:
DS22139B-page 36
© 2009 Microchip Technology Inc.
MCP6561/1R/1U/2/4
APPENDIX A:
REVISION HISTORY
Revision B (August 2009)
The following is the list of modifications:
1.
2.
Added MCP6561U throughout the document.
Updated package drawing section.
Revision A (March 2009)
• Original Release of this Document.
© 2009 Microchip Technology Inc.
DS22139B-page 37
MCP6561/1R/1U/2/4
NOTES:
DS22139B-page 38
© 2009 Microchip Technology Inc.
MCP6561/1R/1U/2/4
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
Device
–
X
/XX
Temperature
Range
Package
Device
Single Comparator (Tape and Reel)
(SC70, SOT-23)
MCP6561RT: Single Comparator (Tape and Reel)
(SOT-23 only)
MCP6561UT: Single Comparator (Tape and Reel)
(SOT-23 only)
MCP6562:
Dual Comparator
MCP6562T:
Dual Comparator(Tape and Reel)
MCP6564:
Quad Comparator
MCP6564T:
Quad Comparator(Tape and Reel)
Examples:
a)
MCP6561T-E/LT:
b)
MCP6561T-E/OT:
a)
MCP6561RT-E/OT: Tape and Reel
Extended Temperature,
5LD SOT-23 package.
a)
MCP6561UT-E/OT: Tape and Reel
Extended Temperature,
5LD SOT-23 package.
a)
MCP6562-E/MS:
b)
MCP6562-E/SN:
a)
MCP6564T-E/SL:
b)
MCP6564T-E/ST:
MCP6561T:
Temperature Range
E
= -40°C to +125°C
Package
LT
OT
MS
SN
ST
SL
=
=
=
=
=
=
Plastic Small Outline Transistor (SC70), 5-lead
Plastic Small Outline Transistor, 5-lead
Plastic Micro Small Outline Transistor, 8-lead
Plastic Small Outline Transistor, 8-lead
Plastic Thin Shrink Small Outline Transistor, 14-lead
Plastic Small Outline Transistor, 14-lead
© 2009 Microchip Technology Inc.
Tape and Reel,
Extended Temperature,
5LD SC70 package.
Tape and Reel
Extended Temperature,
5LD SOT-23 package.
Extended Temperature
8LD MSOP package.
Extended Temperature
8LD SOIC package.
Tape and Reel
Extended Temperature
14LD SOIC package.
Tape and Reel
Extended Temperature
14LD TSSOP package.
DS22139B-page 39
MCP6561/1R/1U/2/4
NOTES:
DS22139B-page 40
© 2009 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART,
rfPIC and UNI/O are registered trademarks of Microchip
Technology Incorporated in the U.S.A. and other countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MXDEV, MXLAB, SEEVAL and The Embedded Control
Solutions Company are registered trademarks of Microchip
Technology Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, CodeGuard,
dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial
Programming, ICSP, Mindi, MiWi, MPASM, MPLAB Certified
logo, MPLIB, MPLINK, mTouch, Octopus, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
PICtail, PIC32 logo, REAL ICE, rfLAB, Select Mode, Total
Endurance, TSHARC, UniWinDriver, WiperLock and ZENA
are trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2009, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received ISO/TS-16949:2002 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
© 2009 Microchip Technology Inc.
DS22139B-page 41
WORLDWIDE SALES AND SERVICE
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://support.microchip.com
Web Address:
www.microchip.com
Asia Pacific Office
Suites 3707-14, 37th Floor
Tower 6, The Gateway
Harbour City, Kowloon
Hong Kong
Tel: 852-2401-1200
Fax: 852-2401-3431
India - Bangalore
Tel: 91-80-3090-4444
Fax: 91-80-3090-4080
India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
India - Pune
Tel: 91-20-2566-1512
Fax: 91-20-2566-1513
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
Japan - Yokohama
Tel: 81-45-471- 6166
Fax: 81-45-471-6122
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Atlanta
Duluth, GA
Tel: 678-957-9614
Fax: 678-957-1455
Boston
Westborough, MA
Tel: 774-760-0087
Fax: 774-760-0088
Chicago
Itasca, IL
Tel: 630-285-0071
Fax: 630-285-0075
Cleveland
Independence, OH
Tel: 216-447-0464
Fax: 216-447-0643
Dallas
Addison, TX
Tel: 972-818-7423
Fax: 972-818-2924
Detroit
Farmington Hills, MI
Tel: 248-538-2250
Fax: 248-538-2260
Kokomo
Kokomo, IN
Tel: 765-864-8360
Fax: 765-864-8387
Los Angeles
Mission Viejo, CA
Tel: 949-462-9523
Fax: 949-462-9608
Santa Clara
Santa Clara, CA
Tel: 408-961-6444
Fax: 408-961-6445
Toronto
Mississauga, Ontario,
Canada
Tel: 905-673-0699
Fax: 905-673-6509
Australia - Sydney
Tel: 61-2-9868-6733
Fax: 61-2-9868-6755
China - Beijing
Tel: 86-10-8528-2100
Fax: 86-10-8528-2104
China - Chengdu
Tel: 86-28-8665-5511
Fax: 86-28-8665-7889
Korea - Daegu
Tel: 82-53-744-4301
Fax: 82-53-744-4302
China - Hong Kong SAR
Tel: 852-2401-1200
Fax: 852-2401-3431
Korea - Seoul
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
China - Nanjing
Tel: 86-25-8473-2460
Fax: 86-25-8473-2470
Malaysia - Kuala Lumpur
Tel: 60-3-6201-9857
Fax: 60-3-6201-9859
China - Qingdao
Tel: 86-532-8502-7355
Fax: 86-532-8502-7205
Malaysia - Penang
Tel: 60-4-227-8870
Fax: 60-4-227-4068
China - Shanghai
Tel: 86-21-5407-5533
Fax: 86-21-5407-5066
Philippines - Manila
Tel: 63-2-634-9065
Fax: 63-2-634-9069
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
China - Shenzhen
Tel: 86-755-8203-2660
Fax: 86-755-8203-1760
Taiwan - Hsin Chu
Tel: 886-3-6578-300
Fax: 886-3-6578-370
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
Taiwan - Kaohsiung
Tel: 886-7-536-4818
Fax: 886-7-536-4803
China - Xiamen
Tel: 86-592-2388138
Fax: 86-592-2388130
Taiwan - Taipei
Tel: 886-2-2500-6610
Fax: 886-2-2508-0102
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
UK - Wokingham
Tel: 44-118-921-5869
Fax: 44-118-921-5820
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049
03/26/09
DS22139B-page 42
© 2009 Microchip Technology Inc.