INTERSIL ISL83385EIA

ISL83385E
TM
Data Sheet
January 2001
15kV ESD Protected, +3V to +5.5V,
+/-1 Microamp, 250kbps,
RS-232 Transmitters/Receivers
File Number
6001
Features
• ESD Protection for RS-232 I/O Pins to ±15kV (IEC1000)
The Intersil ISL83385E contains 3.0V to 5.5V powered
RS-232 transmitters/receivers which meet ElA/TIA-232 and
V.28/V.24 specifications, even at VCC = 3.0V. Targeted
applications are PDAs, Palmtops, and notebook and laptop
computers where the low operational, and even lower
standby, power consumption is critical. Efficient on-chip
charge pumps, coupled with a manual powerdown function
reduces the standby supply current to a 1µA trickle. Small
footprint packaging, and the use of small, low value
capacitors ensure board space savings as well. Data rates
greater than 250kbps are guaranteed at worst case load
conditions. This device is fully compatible with 3.3V only
systems, mixed 3.3V and 5.0V systems, and 5.0V only
systems.
• Low Power, Pin Compatible Upgrade for MAX3385E
• Single SHDN Pin Disables Transmitters
• Receivers Active in Powerdown
• Meets EIA/TIA-232 and V.28/V.24 Specifications at 3V
• Latch-Up Free
• On-Chip Voltage Converters Require Only Four External
0.1µF Capacitors
• Receiver Hysteresis For Improved Noise Immunity
• Very Low Supply Current . . . . . . . . . . . . . . . . . . . . 0.3mA
• Guaranteed Minimum Data Rate . . . . . . . . . . . . 250kbps
• Guaranteed Minimum Slew Rate . . . . . . . . . . . . . . . 6V/µs
The single pin powerdown function (SHDN = 0) disables all
the transmitters, while shutting down the charge pump to
minimize supply current drain.
• Wide Power Supply Range. . . . . . . . Single +3V to +5.5V
Table 1 summarizes the features of the ISL83385E, while
Application Note AN9863 summarizes the features of each
device comprising the 3V RS-232 family.
Applications
Ordering Information
PART
NUMBER
TEMP.
RANGE (oC)
PACKAGE
PKG. NO.
ISL83385ECB
0 to 70
18 Ld SOIC
M18.3
ISL83385ECB-T
0 to 70
Tape and Reel
M18.3
ISL83385ECA
0 to 70
20 Ld SSOP
M20.209
ISL83385ECA-T
0 to 70
Tape and Reel
M20.209
ISL83385EIB
-40 to 85
18 Ld SOIC
M18.3
ISL83385EIB-T
-40 to 85
Tape and Reel
M18.3
ISL83385EIA
-40 to 85
20 Ld SSOP
M20.209
ISL83385EIA-T
-40 to 85
Tape and Reel
M20.209
• Low Supply Current in Powerdown State . . . . . . . . . <1µA
• Any System Requiring RS-232 Communication Ports
- Battery Powered, Hand-Held, and Portable Equipment
- Laptop Computers, Notebooks, Palmtops
- Modems, Printers and other Peripherals
- Digital Cameras
- Cellular/Mobile Phones
TABLE 1. SUMMARY OF FEATURES
PART
NUMBER
ISL83385E
NO. OF NO. OF
Tx.
Rx.
2
2
1
NO. OF
MONITOR Rx.
(ROUTB)
DATA
RATE
(kbps)
Rx. ENABLE
FUNCTION?
READY
OUTPUT?
MANUAL
POWERDOWN?
AUTOMATIC
POWERDOWN
FUNCTION?
0
250
NO
NO
YES
NO
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2001
ISL83385E
Pinouts
ISL83385E (SOIC)
TOP VIEW
ISL83385E (SSOP)
TOP VIEW
18 SHDN
NC 1
C1+ 2
17 VCC
3
16 GND
V+
C1- 4
15 T1OUT
C2+ 5
14 R1IN
C2- 6
13 R1OUT
V- 7
12 T1IN
T2OUT 8
11 T2IN
NC 1
C1+ 2
19 VCC
3
18 GND
V+
10 R2OUT
R2IN 9
C1- 4
17 T1OUT
C2+ 5
16 R1IN
C2- 6
15 R1OUT
V- 7
14 T1IN
T2OUT 8
13 T2IN
R2IN 9
NC 10
Pin Descriptions
PIN
VCC
FUNCTION
System power supply input (3.0V to 5.5V).
V+
Internally generated positive transmitter supply (+5.5V).
V-
Internally generated negative transmitter supply (-5.5V).
GND
Ground connection.
C1+
External capacitor (voltage doubler) is connected to this lead.
C1-
External capacitor (voltage doubler) is connected to this lead.
C2+
External capacitor (voltage inverter) is connected to this lead.
C2-
External capacitor (voltage inverter) is connected to this lead.
TIN
TTL/CMOS compatible transmitter Inputs.
TOUT
RIN
±15kV ESD Protected, RS-232 level (nominally ±5.5V) transmitter outputs.
±15kV ESD Protected, RS-232 compatible receiver inputs.
ROUT
TTL/CMOS level receiver outputs.
SHDN
Active low input to shut down transmitters and on-board power supply, to place device in low power mode.
2
20 SHDN
12 R2OUT
11 NC
ISL83385E
Typical Operating Circuit
ISL83385E (NOTE 2)
C3 (OPTIONAL CONNECTION, NOTE 1)
C1
0.1µF
C2
0.1µF
T1IN
T2IN
TTL/CMOS
LOGIC LEVELS
R1OUT
+
0.1µF
2
+
4
5
+
6
+
+3.3V to +5V
17
C1+
VCC
3
V+
C1C2+
12
11
7
V-
C2-
+
T1
15
T2
14
9
10
R2IN
5kΩ
R2
SHDN
GND
16
3
R1IN
5kΩ
R2OUT
2. Pin numbers refer to SOIC package.
T1OUT
T2OUT
R1
1. The negative terminal of C3 can be connected to either VCC or Gnd.
C4
0.1µF
8
13
NOTES:
+ C3
0.1µF
18
VCC
RS-232
LEVELS
ISL83385E
Absolute Maximum Ratings
Thermal Information
VCC to Ground. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 6V
V+ to Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 7V
V- to Ground. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +0.3V to -7V
V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14V
Input Voltages
TIN, SHDN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 6V
RIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±25V
Output Voltages
TOUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±13.2V
ROUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to VCC +0.3V
Short Circuit Duration
TOUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous
ESD Rating . . . . . . . . . . . . . . . . . . . . . . . . . See Specification Table
Thermal Resistance (Typical, Note 3)
θJA (oC/W)
18 Ld SOIC Package . . . . . . . . . . . . . . . . . . . . . . . .
75
20 Ld SSOP Package . . . . . . . . . . . . . . . . . . . . . . .
125
Moisture Sensitivity (see Technical Brief TB363)
All Packages. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Level 1
Maximum Junction Temperature (Plastic Package) . . . . . . . 150oC
Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC
(SOIC, SSOP - Lead Tips Only)
Operating Conditions
Temperature Range
ISL83385ECX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0oC to 70oC
ISL83385EIX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to 85oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
3. θJA is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
Electrical Specifications
Test Conditions: VCC = 3V to 5.5V, C1 - C4 = 0.1µF; Unless Otherwise Specified.
Typicals are at TA = 25oC
PARAMETER
TEST CONDITIONS
TEMP
(oC)
MIN
TYP
MAX
UNITS
DC CHARACTERISTICS
Supply Current, Enabled
All Outputs Unloaded, SHDN = VCC, VCC = 3.15V
25
-
0.3
1
mA
Supply Current, Powerdown
SHDN = GND
25
-
1
10
µA
Full
-
-
0.8
V
VCC = 3.3V
Full
2.0
-
-
V
VCC = 5.0V
Full
2.4
-
-
V
25
-
0.5
-
V
TIN, SHDN
Full
-
±0.01
±1.0
µA
Output Voltage Low
IOUT = 1.6mA
Full
-
-
0.4
V
Output Voltage High
IOUT = -1.0mA
Full
-
V
LOGIC AND TRANSMITTER INPUTS
Input Logic Threshold Low
TIN, SHDN
Input Logic Threshold High
TIN, SHDN
Transmitter Input Hysteresis
Input Leakage Current
RECEIVER OUTPUTS
VCC -0.6 VCC -0.1
RECEIVER INPUTS
Input Voltage Range
Full
-25
-
25
V
VCC = 3.3V
25
0.6
1.2
-
V
VCC = 5.0V
25
0.8
1.5
-
V
VCC = 3.3V
25
-
1.5
2.4
V
VCC = 5.0V
25
-
1.8
2.4
V
Input Hysteresis
25
-
0.5
-
V
Input Resistance
25
3
5
7
kΩ
Input Threshold Low
Input Threshold High
TRANSMITTER OUTPUTS
Output Voltage Swing
All Transmitter Outputs Loaded with 3kΩ to Ground
Full
±5.0
±5.4
-
V
Output Resistance
VCC = V+ = V- = 0V, Transmitter Output = ±2V
Full
300
10M
-
Ω
Full
-
±35
±60
mA
Output Short-Circuit Current
4
ISL83385E
Electrical Specifications
Test Conditions: VCC = 3V to 5.5V, C1 - C4 = 0.1µF; Unless Otherwise Specified.
Typicals are at TA = 25oC (Continued)
TEMP
(oC)
MIN
TYP
MAX
UNITS
VOUT = ±12V, VCC = 0V or 3V to 5.5V, SHDN = GND
Full
-
-
±25
µA
Maximum Data Rate
RL = 3kΩ, CL = 1000pF, One Transmitter Switching
Full
250
500
-
kbps
Receiver Propagation Delay
Receiver Input to Receiver
Output, CL = 150pF
tPHL
25
-
0.15
-
µs
tPLH
25
-
0.15
-
µs
PARAMETER
TEST CONDITIONS
Output Leakage Current
TIMING CHARACTERISTICS
Transmitter Output Enable Time
From SHDN Rising Edge to TOUT = ±3.7V
25
-
100
-
µs
Transmitter Skew
tPHL - tPLH (Note 4)
25
-
100
-
ns
Receiver Skew
tPHL - tPLH
25
-
50
-
ns
Transition Region Slew Rate
RL = 3kΩ to 7kΩ,
CL = 150pF to 1000pF
Measured From 3V to -3V or
CL = 150pF to 2500pF
-3V to 3V, VCC = 3.3V
25
6
-
30
V/µs
25
4
-
30
V/µs
Human Body Model
25
-
±15
-
kV
IEC1000-4-2 Air Gap Discharge
25
-
±15
-
kV
IEC1000-4-2 Contact Discharge
25
-
±8
-
kV
Human Body Model
25
-
±3
-
kV
ESD PERFORMANCE
RS-232 Pins (TOUT, RIN)
All Other Pins
NOTE:
4. Transmitter skew is measured at the transmitter zero crossing points.
Detailed Description
The ISL83385E operates from a single +3V to +5.5V supply,
guarantees a 250kbps minimum data rate, requires only four
small external 0.1µF capacitors, features low power
consumption, and meets all ElA RS-232C and V.28
specifications. The circuit is divided into three sections: The
charge pump, the transmitters, and the receivers.
Charge-Pump
Intersil’s new ISL83385E utilizes regulated on-chip dual
charge pumps as voltage doublers, and voltage inverters to
generate ±5.5V transmitter supplies from a VCC supply as
low as 3.0V. This allows these devices to maintain RS-232
compliant output levels over the ±10% tolerance range of
3.3V powered systems. The efficient on-chip power supplies
require only four small, external 0.1µF capacitors for the
voltage doubler and inverter functions over the full VCC
range; other capacitor combinations can be used as shown
in Table 3. The charge pumps operate discontinuously (i.e.,
they turn off as soon as the V+ and V- supplies are pumped
up to the nominal values), resulting in significant power
savings.
these transmitters deliver true RS-232 levels over a wide
range of single supply system voltages.
All transmitter outputs disable and assume a high
impedance state when the device enters the powerdown
mode (see Table 2). These outputs may be driven to ±12V
when disabled.
All devices guarantee a 250kbps data rate for full load
conditions (3kΩ and 1000pF), VCC ≥ 3.0V, with one
transmitter operating at full speed. Under more typical
conditions of VCC ≥ 3.3V, RL = 3kΩ, and CL = 250pF, one
transmitter easily operates at 900kbps.
Transmitter inputs float if left unconnected (there are no pullup resistors), and may cause ICC increases. Connect
unused inputs to GND for the best performance.
TABLE 2. POWERDOWN TRUTH TABLE
SHDN TRANSMITTER RECEIVER
INPUT
OUTPUTS
OUTPUTS MODE OF OPERATION
H
Active
Active
Normal Operation
L
High-Z
Active
Manual Powerdown
Transmitters
Receivers
The transmitters are proprietary, low dropout, inverting
drivers that translate TTL/CMOS inputs to EIA/TIA-232
output levels. Coupled with the on-chip ±5.5V supplies,
The ISL83385E contains standard inverting receivers that
convert RS-232 signals to CMOS output levels and accept
inputs up to ±30V while presenting the required 3kΩ to 7kΩ
input impedance (see Figure 1) even if the power is off
5
ISL83385E
(VCC = 0V). The receivers’ Schmitt trigger input stage uses
hysteresis to increase noise immunity and decrease errors
due to slow input signal transitions.
VCC
RXIN
RXOUT
-25V ≤ VRIN ≤ +25V
GND ≤ VROUT ≤ VCC
5kΩ
GND
FIGURE 1. INVERTING RECEIVER CONNECTIONS
Low Power Operation
This 3V device requires a nominal supply current of 0.3mA,
even at VCC = 5.5V, during normal operation (not in
powerdown mode). This is considerably less than the 11mA
current required by comparable 5V RS-232 devices, allowing
users to reduce system power simply by replacing the old
style device with the ISL83385E in new designs.
Powerdown Functionality
The already low current requirement drops significantly
when the device enters powerdown mode. In powerdown,
supply current drops to 1µA, because the on-chip charge
pump turns off (V+ collapses to VCC, V- collapses to GND),
and the transmitter outputs tristate. This micro-power mode
makes these devices ideal for battery powered and portable
applications.
Software Controlled (Manual) Powerdown
The ISL83385E may be forced into its low power, standby
state via a simple shutdown (SHDN) pin (see Figure 2).
Driving this pin high enables normal operation, while driving
it low forces the IC into it’s powerdown state. The time
required to exit powerdown, and resume transmission is less
than 100µs. Connect SHDN to VCC if the powerdown
function isn’t needed.
SHDN
PWR
MGT
LOGIC
Capacitor Selection
These charge pumps only require 0.1µF capacitors for the
full operational voltage range. Table 3 lists other acceptable
capacitor values for various supply voltage ranges. Do not
use values smaller than those listed in Table 3. Increasing
the capacitor values (by a factor of 2) reduces ripple on the
transmitter outputs and slightly reduces power consumption.
When using minimum required capacitor values, make sure
that capacitor values do not degrade excessively with
temperature. If in doubt, use capacitors with a larger nominal
value. The capacitor’s equivalent series resistance (ESR)
usually rises at low temperatures and it influences the
amount of ripple on V+ and V-.
TABLE 3. REQUIRED CAPACITOR VALUES
VCC
(V)
C1
(µF)
C2, C3, C4
(µF)
3.0 to 3.6
0.1
0.1
4.5 to 5.5
0.047
0.33
3.0 to 5.5
0.1
0.47
Power Supply Decoupling
In most circumstances a 0.1µF bypass capacitor is
adequate. In applications that are particularly sensitive to
power supply noise, decouple VCC to ground with a
capacitor of the same value as the charge-pump capacitor C1.
Connect the bypass capacitor as close as possible to the IC.
Transmitter Outputs when Exiting
Powerdown
Figure 3 shows the response of two transmitter outputs
when exiting powerdown mode. As they activate, the two
transmitter outputs properly go to opposite RS-232 levels,
with no glitching, ringing, nor undesirable transients. Each
transmitter is loaded with 3kΩ in parallel with 2500pF. Note
that the transmitters enable only when the magnitude of the
supplies exceed approximately 3V.
5V/DIV
SHDN
T1
ISL83385E
2V/DIV
I/O
UART
CPU
T2
VCC = +3.3V
C1 - C4 = 0.1µF
TIME (20µs/DIV.)
FIGURE 2. CONNECTIONS FOR MANUAL POWERDOWN
6
FIGURE 3. TRANSMITTER OUTPUTS WHEN EXITING
POWERDOWN
ISL83385E
High Data Rates
The ISL83385E maintains the RS-232 ±5V minimum
transmitter output voltages even at high data rates. Figure 4
details a transmitter loopback test circuit, and Figure 5
illustrates the loopback test result at 120kbps. For this test,
all transmitters were simultaneously driving RS-232 loads in
parallel with 1000pF, at 120kbps. Figure 6 shows the
loopback results for a single transmitter driving 1000pF and
an RS-232 load at 250kbps. The static transmitter was also
loaded with an RS-232 receiver.
5V/DIV.
T1IN
T1OUT
R1OUT
VCC = +3.3V
C1 - C4 = 0.1µF
VCC
+
0.1µF
2µs/DIV.
FIGURE 6. LOOPBACK TEST AT 250kbps
+
C1+
VCC
V+
C1
C1-
+
C3
ISL83385E
+
V-
C2+
C2
C4
+
C2TIN
TOUT
RIN
ROUT
Interconnection with 3V and 5V Logic
The ISL83385E directly interfaces with most 5V logic
families, including ACT and HCT CMOS. See Table 4 for
more information on possible combinations of
interconnections.
1000pF
TABLE 4. LOGIC FAMILY COMPATIBILITY WITH VARIOUS
SUPPLY VOLTAGES
5k
VCC
SHDN
FIGURE 4. TRANSMITTER LOOPBACK TEST CIRCUIT
5V/DIV.
T1IN
SYSTEM
POWER-SUPPLY
VOLTAGE
(V)
VCC
SUPPLY
VOLTAGE
(V)
3.3
3.3
5
5
5
3.3
COMPATIBILITY
Compatible with all CMOS
families.
Compatible with all TTL and
CMOS logic families.
Compatible with ACT and HCT
CMOS, and with TTL.
Incompatible with AC, HC, or
CD4000 CMOS.
±15kV ESD Protection
T1OUT
R1OUT
VCC = +3.3V
C1 - C4 = 0.1µF
5µs/DIV.
FIGURE 5. LOOPBACK TEST AT 120kbps
7
All pins on the 3V interface devices include ESD protection
structures, but the ISL83385E incorporates advanced
structures which allow the RS-232 pins (transmitter outputs
and receiver inputs) to survive ESD events up to ±15kV. The
RS-232 pins are particularly vulnerable to ESD damage
because they typically connect to an exposed port on the
exterior of the finished product. Simply touching the port
pins, or connecting a cable, can cause an ESD event that
might destroy unprotected ICs. These new ESD structures
protect the device whether or not it is powered up, protect
without allowing any latchup mechanism to activate, and
don’t interfere with RS-232 signals as large as ±25V.
ISL83385E
Human Body Model (HBM) Testing
As the name implies, this test method emulates the ESD
event delivered to an IC during human handling. The tester
delivers the charge through a 1.5kΩ current limiting resistor,
making the test less severe than the IEC-1000 test which
utilizes a 330Ω limiting resistor. The HBM method
determines an ICs ability to withstand the ESD transients
typically present during handling and manufacturing. Due to
the random nature of these events, each pin is tested with
respect to all other pins. The RS-232 pins on “E” family
devices can withstand HBM ESD events to ±15kV.
IEC1000-4-2 Testing
the HBM test. The extra ESD protection built into this
device’s RS-232 pins allows the design of equipment
meeting level 4 criteria without the need for additional board
level protection on the RS-232 port.
AIR-GAP DISCHARGE TEST METHOD
For this test method, a charged probe tip moves toward the
IC pin until the voltage arcs to it. The current waveform
delivered to the IC pin depends on approach speed,
humidity, temperature, etc., so it is difficult to obtain
repeatable results. The “E” device RS-232 pins withstand
±15kV air-gap discharges.
CONTACT DISCHARGE TEST METHOD
The IEC 1000 test method applies to finished equipment,
rather than to an individual IC. Therefore, the pins most likely
to suffer an ESD event are those that are exposed to the
outside world (the RS-232 pins in this case), and the IC is
tested in its typical application configuration (power applied)
rather than testing each pin-to-pin combination. The lower
current limiting resistor coupled with the larger charge
storage capacitor yields a test that is much more severe than
Typical Performance Curves
During the contact discharge test, the probe contacts the
tested pin before the probe tip is energized, thereby
eliminating the variables associated with the air-gap
discharge. The result is a more repeatable and predictable
test, but equipment limits prevent testing devices at voltages
higher than ±8kV. All “E” family devices survive ±8kV contact
discharges on the RS-232 pins.
VCC = 3.3V, TA = 25oC
25
VOUT+
4.0
20
SLEW RATE (V/µs)
TRANSMITTER OUTPUT VOLTAGE (V)
6.0
2.0
1 TRANSMITTER AT 250kbps
1 TRANSMITTER AT 30kbps
0
-2.0
15
-SLEW
+SLEW
10
VOUT -
-4.0
-6.0
0
1000
2000
3000
4000
5000
LOAD CAPACITANCE (pF)
FIGURE 7. TRANSMITTER OUTPUT VOLTAGE vs LOAD
CAPACITANCE
8
5
0
1000
2000
3000
4000
LOAD CAPACITANCE (pF)
FIGURE 8. SLEW RATE vs LOAD CAPACITANCE
5000
ISL83385E
Typical Performance Curves
VCC = 3.3V, TA = 25oC (Continued)
45
3.5
40
3.0
35
SUPPLY CURRENT (mA)
SUPPLY CURRENT (mA)
250kbps
NO LOAD
ALL OUTPUTS STATIC
30
25
120kbps
20
15
20kbps
10
2.5
2.0
1.5
1.0
0.5
5
0
0
1000
2000
3000
4000
5000
0
2.5
3.0
3.5
FIGURE 9. SUPPLY CURRENT vs LOAD CAPACITANCE
WHEN TRANSMITTING DATA
PASSIVATION
100 mils x 100 mils (2540µm x 2540µm)
METALLIZATION
Type: Silox
Thickness: 13kÅ
TRANSISTOR COUNT
Type: Metal 1: AISi(1%)
Thickness: Metal 1: 8kÅ
Type: Metal 2: AISi (1%)
Thickness: Metal 2: 10kÅ
338
PROCESS
Si Gate CMOS
SUBSTRATE POTENTIAL (POWERED UP)
Floating
9
4.5
5.0
5.5
FIGURE 10. SUPPLY CURRENT vs SUPPLY VOLTAGE
Die Characteristics
DIE DIMENSIONS
4.0
SUPPLY VOLTAGE (V)
LOAD CAPACITANCE (pF)
6.0
ISL83385E
Small Outline Plastic Packages (SOIC)
M18.3 (JEDEC MS-013-AB ISSUE C)
18 LEAD WIDE BODY SMALL OUTLINE PLASTIC PACKAGE
N
INDEX
AREA
H
0.25(0.010) M
B M
INCHES
E
-B1
2
3
L
SEATING PLANE
-A-
h x 45o
A
D
-C-
e
A1
B
0.25(0.010) M
C
0.10(0.004)
C A M
B S
NOTES:
1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of
Publication Number 95.
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006
inch) per side.
4. Dimension “E” does not include interlead flash or protrusions. Interlead
flash and protrusions shall not exceed 0.25mm (0.010 inch) per side.
5. The chamfer on the body is optional. If it is not present, a visual index
feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater above
the seating plane, shall not exceed a maximum value of 0.61mm
(0.024 inch)
10. Controlling dimension: MILLIMETER. Converted inch dimensions are
not necessarily exact.
10
SYMBOL
MIN
MAX
MIN
MAX
NOTES
A
0.0926
0.1043
2.35
2.65
-
A1
0.0040
0.0118
0.10
0.30
-
B
0.013
0.0200
0.33
0.51
9
C
0.0091
0.0125
0.23
0.32
-
D
0.4469
0.4625
11.35
11.75
3
E
0.2914
0.2992
7.40
7.60
4
e
α
MILLIMETERS
0.050 BSC
1.27 BSC
-
H
0.394
0.419
10.00
10.65
-
h
0.010
0.029
0.25
0.75
5
L
0.016
0.050
0.40
1.27
6
N
α
18
0o
18
8o
0o
7
8o
Rev. 0 12/93
ISL83385E
Shrink Small Outline Plastic Packages (SSOP)
M20.209 (JEDEC MO-150-AE ISSUE B)
N
20 LEAD SHRINK SMALL OUTLINE PLASTIC PACKAGE
INDEX
AREA
H
0.25(0.010) M
B M
INCHES
E
GAUGE
PLANE
-B1
2
3
L
0.25
0.010
SEATING PLANE
-A-
A
D
-C-
α
e
B
C
0.10(0.004)
0.25(0.010) M
C A M
SYMBOL
MIN
MAX
MIN
MAX
NOTES
A
-
0.078
-
2.00
-
A1
0.002
-
0.05
-
-
A2
0.065
0.072
1.65
1.85
-
B
0.009
0.014
0.22
0.38
9
C
0.004
0.009
0.09
0.25
-
D
0.272
0.295
6.90
7.50
3
E
0.197
0.220
5.00
5.60
4
e
A2
A1
B S
0.026 BSC
H
0.292
L
0.022
N
NOTES:
1. Symbols are defined in the “MO Series Symbol List” in Section 2.2
of Publication Number 95.
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Dimension “D” does not include mold flash, protrusions or gate
burrs. Mold flash, protrusion and gate burrs shall not exceed
0.20mm (0.0078 inch) per side.
4. Dimension “E” does not include interlead flash or protrusions. Interlead flash and protrusions shall not exceed 0.20mm (0.0078 inch)
per side.
5. The chamfer on the body is optional. If it is not present, a visual index feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. Dimension “B” does not include dambar protrusion. Allowable dambar protrusion shall be 0.13mm (0.005 inch) total in excess of “B”
dimension at maximum material condition.
10. Controlling dimension: MILLIMETER. Converted inch dimensions
are not necessarily exact.
MILLIMETERS
α
0.65 BSC
0.322
7.40
0.037
0.55
20
0o
-
0.95
6
20
8o
0o
-
8.20
7
8o
Rev. 2 4/95
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