VS-VSKS500/08PbF www.vishay.com Vishay Semiconductors MAP Block Power Module Single Thyristor, 500 A FEATURES • Electrically isolated base plate • 3000 VRMS isolating voltage • Industrial standard package • Simplified mechanical designs, rapid assembly • High surge capability • Large creepage distances MAP Block Power • UL approved file E78996 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY IT(AV) 500 A Type Modules - Thyristor, Standard Package MAP BLOCK Circuit Single Thrysistor APPLICATIONS • Battery chargers • Welders • Power converters • Alternators MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VDRM/VRRM IT(AV) ITSM I2t UNITS 800 V 76 °C 500 A 50 Hz 14 000 60 Hz 14 658 50 Hz 980 60 Hz 894 I2t TJ VALUES A kA2s 9800 kA2s - 40 to 130 °C VRRM/VDRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM/VDSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM/IDRM AT 130 °C mA 800 900 80 Range ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-VSKS500/08PbF Revision: 19-Dec-13 Document Number: 93160 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKS500/08PbF www.vishay.com Vishay Semiconductors ON-STATE CONDUCTION PARAMETER SYMBOL Maximum average on-state current at case temperature Maximum RMS on-state current IT(AV) IT(RMS) TEST CONDITIONS 180° conduction half sine wave As AC switch t = 10 ms Maximum peak, one-cycle on-state, non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t VALUES 500 A 76 °C 785 16 646 No voltage reapplied 100 % VRRM reapplied No voltage reapplied 17 430 A 14 000 Sine half wave, initial TJ = TJ maximum 100 % VRRM reapplied t = 0.1 ms to 10 ms, no voltage reapplied 14 658 1385 1265 894 kA2s 894 1385 Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ maximum 0.6839 High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ maximum 0.7598 Low level value on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ maximum 0.393 High level value on-state slope resistance rt2 (I > x IT(AV)), TJ maximum 0.389 Maximum on-state voltage drop UNITS kA2s V m VTM TJ = 25 °C, 500 A Ipk 1.1 V VALUES UNITS SWITCHING PARAMETER SYMBOL TEST CONDITIONS Typical delay time td Gate current 1 A, dIg/dt = 1 A/μs Vd = 0.67 % VDRM, TJ = 25 °C, It = 400 A 1.3 Typical turn-off time tq ITM = 750 A, TJ = TJ maximum, dI/dt = 60 A/μs, VR = 50 V dV/dt = 20 V/μs, Gate 0 V 100 , tp = 500 μs 200 μs BLOCKING PARAMETER SYMBOL VALUES UNITS TJ = TJ maximum linear to 67 % rated VDRM 500 V/μs IDRM, IRRM TJ = TJ maximum, rated VDRM/VRRM applied 80 mA VINS 50 Hz, circuit to base, all terminal shorted, t = 1 s 3000 V Maximum critical rate of rise of off-state voltage dV/dt Maximum peak reverse and off-state leakage current RMS insulation voltage Revision: 19-Dec-13 TEST CONDITIONS Document Number: 93160 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKS500/08PbF www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum required DC gate voltage to trigger VGT Maximum required DC gate current to trigger IGT Maximum holding current IH Maximum peak positive gate voltage +VGM Maximum peak negative gate voltage -VGM DC gate voltage not to trigger VGD DC gate current not to trigger IGD Maximum non-repetitive rate of rise of turned-on current dI/dt TEST CONDITIONS VALUES UNITS TJ = TJ maximum, tp 5 ms 10.0 TJ = TJ maximum, f = 50 Hz, d% = 50 2.0 TJ = TJ maximum, tp 5 ms 3.0 A 3 V TJ = 25 °C Anode supply: 12 V resistive load 200 mA 600 20 TJ = TJ maximum, tp 5 ms V 5.0 TJ = TJ maximum Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied W 0.30 V 10 mA 1000 A/μs VALUES UNITS - 40 to 130 °C Gate drive 20 V, 20 , tr 1 μs TJ = TJ maximum, anode voltage 80 % VDRM, It = 400 A THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case per junction RthJC DC operation 0.08 Maximum thermal resistance, case to heatsink per module RthCS Mounting surface smooth, flat and greased 0.035 Mounting torque ± 10 % K/W A mounting compound is recommended and the torque should be rechecked after a period of 3 h to allow for the spread of the compound. Lubricated threads. MAP Block to heatsink busbar to MAP Block 6 to 8 Nm 12 to 15 Approximate weight Case style 430 g 15.3 oz. MAP Block Power R CONDUCTION PER JUNCTION VS-VSKS500 RECTANGULAR CONDUCTION AT TJ MAXIMUM SINUSOIDAL CONDUCTION AT TJ MAXIMUM DEVICES UNITS 180° 120° 90° 60° 30° 180° 120° 90° 60° 30° 0.013 0.0148 0.018 0.026 0.044 0.082 0.0142 0.019 0.027 0.044 K/W Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 19-Dec-13 Document Number: 93160 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKS500/08PbF www.vishay.com Vishay Semiconductors 600 120 Maximum Average On-State Power Loss (W) Maximum Allowable Case Temperature (°C) 140 Ø Conduction angle 100 80 60° 60 180° 30° 90° 40 120° 20 500 400 300 100 200 300 400 500 100 Per leg, TJ = 125 °C 0 600 Average On-State Current (A) 93160_01 100 200 300 400 500 Average On-State Current (A) 93160_04 Fig. 1 - Current Rating Characteristics Fig. 4 - On-State Power Loss Characteristics 15 500 140 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 130 °C No voltage reapplied Voltage reapplied 14 500 120 100 80 30° 60 60° 40 180° 90° Ø Conduction period 20 Peak Half Sine Wave On-State Current (A) Maximum Allowable Case Temperature (°C) Ø Conduction period 0 0 13 500 12 500 11 500 10 500 9500 8500 120° Per leg, TJ = 125 °C 7500 6500 0 0 100 200 300 400 1 500 Average On-State Current (A) 93160_02 600 15 500 400 RMS limit 300 200 Ø 100 Peak Half Sine Wave On-State Current (A) 17 500 180° 120° 90° 60° 30° 13 500 200 300 400 500 Fig. 3 - On-State Power Loss Characteristics Revision: 19-Dec-13 5500 0.01 600 Average On-State Current (A) 9500 7500 0 100 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 130 °C No voltage reapplied Voltage reapplied 11 500 Conduction angle 0 100 Fig. 5 - Maximum Non-Repetitive Surge Current 700 500 10 Number of Equal Amplitude Half Cycle Current Pulses (N) 93160_05 Fig. 2 - Current Rating Characteristics Maximum Average On-State Power Loss (W) RMS limit 200 0 93160_03 180° 120° 90° 60° 30° 93160_06 0.1 1 10 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Document Number: 93160 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKS500/08PbF www.vishay.com Instantaneous On-State Current (A) Vishay Semiconductors 10 000 1000 TJ = 130 °C 100 10 1 0 0.5 1.0 1.5 2.0 2.5 3.0 Instantaneous On-State Voltage (V) 93160_07 Fig. 7 - On-State Voltage Drop Characteristics ZthJC - Transient Thermal Impedance (K/W) 0.1 0.01 0.001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) 93160_08 Fig. 8 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code Revision: 19-Dec-13 VS- VSK S 500 1 2 3 4 / 08 PbF 5 6 1 - Vishay Semiconductors product 2 - Module type 3 - Circuit configuration (S = Single SCR) 4 - Current rating (500 = 500 A) 5 - Voltage rating (08 = 800 V) 6 - PbF = Lead (Pb)-free Document Number: 93160 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKS500/08PbF www.vishay.com Vishay Semiconductors CIRCUIT CONFIGURATION CIRCUIT DESCRIPTION CIRCUIT DRAWING 2 (+) 1 Single SCR 2 3 (-) 7 6 4 5 K1 G1 K1 G1 LINKS TO RELATED DOCUMENTS Dimensions Revision: 19-Dec-13 www.vishay.com/doc?95379 Document Number: 93160 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors Thyristor MAP Block DIMENSIONS in millimeters 3.0 Fast-on tab 2.8 x 0.8 20 + 1.5 52 - 0.0 33 ± 0.5 9.5 ± 0.5 102.8 ± 0.3 Ø 6. 3 36.8 ± 0.15 44.7 ± 0.15 M1 K A 25 7 6 K G 4 38 ± 0.3 5 5 51.5 ± 0.3 0 80 ± 0.3 93.5 ± 0.3 Notes • Dimensions are nominal • Full engineering drawings are available on request Document Number: 95379 Revision: 02-Dec-09 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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