UNISONIC TECHNOLOGIES CO., LTD UN1518 NPN SILICON TRANSISTOR POWER (SWITCHING) TRANSISTOR FEATURES * Bipolar Power Transistor * High Current Switching * High hFE * Low VCE(SAT) ORDERING INFORMATION Ordering Number Package UN1518G-AE3-R SOT-23 Pin Assignment 1 2 3 E B C Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 4 QW-R206-088.E UN1518 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise stated) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage SYMBOL RATINGS UNIT VCBO 20 V VCEO 20 V VEBO 5 V Pulse (Note 2) ICM 6 A Collector Current 2.5 A DC IC Base Current IB 500 mA Total Device Dissipation PD 625 mW Storage Temperature TSTG -50 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width=300ms. Duty cycle ≤2% ELECTRICAL CHARACTERISTICS PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current SYMBOL BVCBO BVCEO BVEBO ICBO IEBO ICES Collector-Emitter Saturation Voltage (Note) VCE(SAT) Base-Emitter Saturation Voltage (Note) Base-Emitter Turn-On Voltage (Note) DC Current Gain (Note) Transition Frequency Output Capacitance Turn-On Time Turn-Off Time Note: Pulse width=300ms. Duty cycle ≤2% VBE(SAT) VBE(ON) hFE fT COB t(ON) t(OFF) TEST CONDITIONS IC=100µA IC=10mA (Note) IE=100µA VCB=16V VEB=4V VCES=16V IC=0.1A, IB=10mA IC=1A, IB=10mA IC=2.5A, IB=50mA IC=2.5A, IB=50mA VCE=2V, IC=2.5A VCE=2V, IC=10mA VCE=2V, IC=200mA VCE=2V, IC=2A VCE=2V, IC=6A VCE=10V, IC=50mA, f=100MHz VCB=10V, f=1MHz VCC=10V, IC=1A IB1=-IB2=10mA UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN 20 20 5 200 300 200 100 100 TYP 100 27 8.3 10 70 200 0.89 0.79 400 450 360 180 140 23 170 400 MAX UNIT V V V 100 nA 100 nA 100 nA 15 mV 150 mV 250 mV 1.0 V 1.0 V 30 MHz pF nS nS 2 of 4 QW-R206-088.E Base-Emitter Saturation Voltage VBE(SAT) (V) Base-Emitter Turn-ON Voltage VBE(ON) (V) Collector-Emitter Saturation Voltage VCE(SAT) (V) DC Current Gain, hFE Normalized Thermal Response, θJA (°C/W) Collector Current, Ic (A) UN1518 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS (TA=25°C) QW-R206-088.E 3 of 4 UN1518 NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R206-088.E