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VCN75-018V_084-20881-00
www.murata-ps.com
DDR2 Memory Module
Model: VCN75-018V
Features:
•
•
•
•
•
•
•
•
•
•
Supports DDR2 Memory
Programmable
Soft Start Circuit
Over-Voltage Protection
Over-Current Protection
Remote Sense
Power Good Signal
Output Enable
High Efficiency
“1U” Height
This product is not fuse protected. User is responsible for providing system protection. Consult
factory for application information.
Table 1:
Input Characteristics
Notes & Conditions*
Input Voltage Operating Range
Maximum Input Current
Min.
Typ.
Max.
10.8
12.0
13.2
1.95Vout @ 75A/10.8Vin
16.0
Units
Vdc
A
No-Load Input Current
300
mA
Disabled Input Current
50
mA
Input Reflected Ripple Current
1.95Vout @ 75A/13.2Vin
Required External Input Capacitor
OSCON Type
200
mA p-p
270
μF
Table 2:
Output Characteristics
Output Voltage Set Point
Notes & Conditions*
Typ.
Units
Vdc
Output Line Regulation
±0.5
%
Output Load Regulation
±0.5
%
20MHz Bandwidth
Output Current Operating Range
Efficiency
1.7
Max.
2.5
Output Voltage Ripple & Noise
Programmable
Min.
50
0
100% Load 12Vin, 1.8Vout
mV p-p
75
85
A
%
Turn-On Time
10
mS
Remote Sense Compensation
10
%Vo nom
Output Voltage Trim Range
1.7
2.5
V
Required External Output Capacitance
1K
8K
μF
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29 Apr 2010
MDC_VCN75-018V_084-20881-00.B01 Page 1 of 5
VCN75-018V_084-20881-00
DDR2 Memory Module
Table 3:
Protection Characteristics
Notes & Conditions*
Min.
Typ.
Max.
Units
Output Current Limit Inception
Hiccup Mode
100
A
Over Voltage Shutdown
Latching
115
%Vnom
Fusing
Unit is not fused.
Table 4:
General Specifications
Enable
Notes & Conditions*
Min.
Typ.
LOW = Disable
HIGH = Enable
Max.
0.8
1.7
Units
Vdc
Vdc
Storage Temperature
-40
70
°C
Operating Temperature
0
50
°C
Material Flammability
UL 94V-0
MTBF
Calculated (RAC PRISM @ 50°C)
785
x103 Hrs
Switching Frequency
Per Phase
200
KHz
Dimensions
3.0”L x 1.05”W x 1.1”H
* Note: Vin = 12Vdc, Ta = 25°C, Airflow = 300LFM unless otherwise noted. Specifications subject to change without notice
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29 Apr 2010
MDC_VCN75-018V_084-20881-00.B01 Page 2 of 5
VCN75-018V_084-20881-00
DDR2 Memory Module
Programming the Output
VDDQ
RT1
VSENSE PLUS
DRR
Memory
VRM
LOAD
RT2
VLOAD
VSENSE MINUS
GND
Table 5:
Vo* (Vo)
RT1 (ohm)
RT2 (ohm)
1.7
499
3261
1.75
499
2670
1.8
499
2260
1.85
499
1959
1.9
499
1729
1.95
499
1547
2
499
1400
2.1
499
1176
2.2
499
1014
2.3
499
891
2.4
499
795
2.5
499
717
*Vo measured at the load side
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email: sales@murata-ps.com
29 Apr 2010
MDC_VCN75-018V_084-20881-00.B01 Page 3 of 5
VCN75-018V_084-20881-00
DDR2 Memory Module
Mechanical Information
Table 6:
Connector J1 Pin Name
Function
Connector J2 Pin Name
Function
1
Power Good
1
GND
2
Output Enable
2
Vo
3
Sense-
3
GND
4
Sense+
4
Vo
5
12Vin
5
GND
6
12Vin
6
Vo
7
GND
7
GND
8
GND
8
Vo
9
GND
10
Vo
11
GND
12
Vo
13
GND
14
Vo
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MDC_VCN75-018V_084-20881-00.B01 Page 4 of 5
VCN75-018V_084-20881-00
Ordering Information
DDR2 Memory Module
VCN75-018V
Family Name
Output Current
75 = 75A
Murata Power Solutions, Inc.
11 Cabot Boulevard, Mansfield, MA 02048-1151 U.S.A.
ISO 9001 and 14001 REGISTERED
Package
V = Vertical Mount
Factory Set Output Voltage
018 = 1.8Vout
Murata Power Solutions, Inc. makes no representation that the use of its products in the circuits described herein, or the use of other
technical information contained herein, will not infringe upon existing or future patent rights. The descriptions contained herein do not imply
the granting of licenses to make, use, or sell equipment constructed in accordance therewith. Specifications are subject to change without
notice.
© 2010 Murata Power Solutions, Inc.
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email: sales@murata-ps.com
29 Apr 2010
MDC_VCN75-018V_084-20881-00.B01 Page 5 of 5