SQA410EJ Datasheet

SQA410EJ
www.vishay.com
Vishay Siliconix
Automotive N-Channel 20 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• AEC-Q101 Qualified d
• 100 % Rg and UIS Tested
20
RDS(on) () at VGS = 4.5 V
0.028
RDS(on) () at VGS = 2.5 V
0.034
RDS(on) () at VGS = 1.8 V
0.038
ID (A)
7.8
Configuration
• Compliant to RoHS Directive 2002/95/EC
Single
D
PowerPAK SC-70-6L-Single
1
D
2
D
3
6
G
D
5
2.05 mm
S
G
Marking Code
S
D
QAX
Part # code
2.05 mm
4
XXX
Lot Traceability
and Date code
Ordering Information: SQA410EJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ORDERING INFORMATION
Package
PowerPAK SC-70
Lead (Pb)-free and Halogen-free
SQA410EJ-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
±8
TC = 25 °C
Continuous Drain Currenta
Continuous Source Current (Diode
ID
TC = 125 °C
Conduction)a
Pulsed Drain Currenta
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationb
L = 0.1 mH
TC = 25 °C
7.8
24
IAS
10
EAS
5
TJ, Tstg
Operating Junction and Storage Temperature Range
7.8
IS
Soldering Recommendations (Peak Temperature)e, f
V
7.8
IDM
PD
TC = 125 °C
UNIT
13.6
4.5
- 55 to + 175
260
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
PCB
Mountc
Junction-to-Case (Drain)
SYMBOL
LIMIT
RthJA
90
RthJC
11
UNIT
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
e. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S11-2338-Rev. A, 12-Dec-11
1
Document Number: 67072
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQA410EJ
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS = 0 V, ID = 250 μA
20
-
-
VGS(th)
VDS = VGS, ID = 250 μA
0.45
0.6
1.1
VDS = 0 V, VGS = ± 8 V
-
-
± 100
VGS = 0 V
VDS = 20 V
-
-
1
-
-
50
IGSS
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V
VDS = 20 V, TJ = 125 °C
VGS = 0 V
VDS = 20 V, TJ = 175 °C
-
-
250
On-State Drain Currenta
ID(on)
VGS = 4.5 V
VDS5 V
10
-
-
Drain-Source On-State Resistancea
Forward
Transconductanceb
RDS(on)
VGS = 4.5 V
ID = 5 A
-
0.023
0.028
VGS = 4.5 V
ID = 5 A, TJ = 125 °C
-
-
0.042
VGS = 4.5 V
ID = 5 A, TJ = 175 °C
-
-
0.050
VGS = 2.5 V
ID = 4 A
-
0.026
0.034
VGS = 1.8 V
ID = 3 A
-
0.031
0.038
-
31
-
-
388
485
-
80
100
-
36
45
-
5
8
-
0.55
-
-
0.79
-
6
11.89
18
-
8
12
gfs
VDS = 15 V, ID = 5 A
V
nA
μA
A

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Source-Drain Diode Ratings and
VGS = 0 V
VGS = 4.5 V
VDS = 10 V, f = 1 MHz
VDS = 10 V, ID = 5.1 A
f = 1 MHz
Rg
td(on)
tr
td(off)
VDD = 10 V, RL = 10 
ID  1 A, VGEN = 4.5 V, Rg = 1 
tf
-
8
12
-
21
32
-
8
12
pF
nC

ns
Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = 4.5 A, VGS = 0 V
-
-
24
A
-
0.75
1.2
V
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S11-2338-Rev. A, 12-Dec-11
2
Document Number: 67072
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQA410EJ
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
21
18
VGS = 5 V thru 2 V
VGS = 1.5 V
15
15
ID - Drain Current (A)
ID - Drain Current (A)
18
12
9
6
9
TC = 25 °C
6
TC = 125 °C
3
VGS = 1 V
3
12
TC = - 55 °C
0
0
0
2
4
6
8
10
0
0.6
VDS - Drain-to-Source Voltage (V)
2.0
50
1.6
40
1.2
TC = 25 °C
0.4
TC = 125 °C
2.4
3
TC = - 55 °C
TC = 25 °C
30
TC = 125 °C
20
10
TC = - 55 °C
0.0
0
0.0
0.4
0.8
1.2
1.6
0
2.0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
ID - Drain Current (A)
Transfer Characteristics
Transconductance
0.10
6
7
600
500
C - Capacitance (pF)
0.08
RDS(on) - On-Resistance (Ω)
1.8
Transfer Characteristics
gfs - Transconductance (S)
ID - Drain Current (A)
Output Characteristics
0.8
1.2
VGS - Gate-to-Source Voltage (V)
0.06
0.04
VGS = 1.8 V
VGS = 2.5 V
0.02
VGS = 4.5 V
Ciss
400
300
200
Coss
100
0.00
Crss
0
0
ID - Drain Current (A)
4
8
12
16
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
4
8
S11-2338-Rev. A, 12-Dec-11
12
16
0
20
3
20
Document Number: 67072
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQA410EJ
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.0
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
5
ID = 5.1 A
VDS = 10 V
4
3
2
1
0
1
2
3
4
5
VGS = 4.5 V
1.1
0.8
- 50 - 25
6
25
50
75
100
150
Gate Charge
On-Resistance vs. Junction Temperature
0.25
10
0.20
TJ = 150 °C
1
TJ = 25 °C
0.1
0.01
0.4
0.6
0.8
1.0
0.10
TJ = 150 °C
TJ = 25 °C
0.00
1.2
175
0.15
0.05
0.2
125
TJ - Junction Temperature (°C)
100
0.001
0.0
0
Qg - Total Gate Charge (nC)
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
1.4
0.5
0
0
1
2
3
4
5
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.3
VDS - Drain-to-Source Voltage (V)
35
0.1
VGS(th) Variance (V)
VGS = 2.5 V
ID = 5 A
1.7
- 0.1
ID = 5 mA
- 0.3
ID = 250 μA
- 0.5
- 50 - 25
0
25
50
75
100
125
150
33
31
29
27
25
- 50 - 25
175
ID = 1 mA
0
25
50
75
100
125
150
175
TJ - Temperature (°C)
TJ - Junction Temperature (°C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
S11-2338-Rev. A, 12-Dec-11
4
Document Number: 67072
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQA410EJ
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
100
IDM Limited
ID - Drain Current (A)
10
Limited by RDS(on)*
100 μs
ID Limited
1
0.1
1 ms
10 ms
100 ms, 1s, 10 s, DC
TC = 25 °C
Single Pulse
BVDSS Limited
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.05
PDM
0.1
0.02
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 90 °C/W
3. TJM - T A = PDMZthJA(t)
Single Pulse
0.01
10-4
10-3
4. Surface Mounted
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
S11-2338-Rev. A, 12-Dec-11
5
Document Number: 67072
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQA410EJ
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67072.
S11-2338-Rev. A, 12-Dec-11
6
Document Number: 67072
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ordering Information
www.vishay.com
Vishay Siliconix
PowerPAK® SC-70
Ordering codes for the SQ rugged series power MOSFETs in the PowerPAK SC-70 package:
DATASHEET PART NUMBER
OLD ORDERING CODE a
NEW ORDERING CODE
SQA410EJ
SQA410EJ-T1-GE3
SQA410EJ-T1_GE3
Note
a. Old ordering code is obsolete and no longer valid for new orders
Revision: 25-Aug-15
Document Number: 66954
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
b
e
PIN1
PIN3
PIN1
PIN2
PIN3
PIN5
K1
E1
E1
K
PIN6
K3
D1
D1
K
D2
D1
E3
E1
E2
K4
K
L
PIN2
b
e
L
PowerPAK® SC70-6L
PIN6
PIN4
K2
PIN5
K1
K2
BACKSIDE VIEW OF SINGLE
PIN4
K2
BACKSIDE VIEW OF DUAL
A
D
C
A1
E
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
Z
z
DETAIL Z
SINGLE PAD
DIM
A
MILLIMETERS
DUAL PAD
INCHES
MILLIMETERS
INCHES
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
0.675
0.75
0.80
0.027
0.030
0.032
0.675
0.75
0.80
0.027
0.030
0.032
A1
0
-
0.05
0
-
0.002
0
-
0.05
0
-
0.002
b
0.23
0.30
0.38
0.009
0.012
0.015
0.23
0.30
0.38
0.009
0.012
0.015
C
0.15
0.20
0.25
0.006
0.008
0.010
0.15
0.20
0.25
0.006
0.008
0.010
D
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
D1
0.85
0.95
1.05
0.033
0.037
0.041
0.513
0.613
0.713
0.020
0.024
0.028
D2
0.135
0.235
0.335
0.005
0.009
0.013
E
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
E1
1.40
1.50
1.60
0.055
0.059
0.063
0.85
0.95
1.05
0.033
0.037
0.041
E2
0.345
0.395
0.445
0.014
0.016
0.018
E3
0.425
0.475
0.525
0.017
0.019
0.021
e
0.65 BSC
0.026 BSC
0.65 BSC
0.026 BSC
K
0.275 TYP
0.011 TYP
0.275 TYP
0.011 TYP
K1
0.400 TYP
0.016 TYP
0.320 TYP
0.013 TYP
K2
0.240 TYP
0.009 TYP
0.252 TYP
0.010 TYP
K3
0.225 TYP
0.009 TYP
K4
L
0.355 TYP
0.175
0.275
0.014 TYP
0.375
T
0.007
0.011
0.015
0.175
0.275
0.375
0.007
0.011
0.015
0.05
0.10
0.15
0.002
0.004
0.006
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5934
Document Number: 73001
06-Aug-07
www.vishay.com
1
Application Note 826
Vishay Siliconix
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single
0.300 (0.012)
0.650 (0.026)
0.350 (0.014)
0.275 (0.011)
0.550 (0.022)
0.475 (0.019)
2.200 (0.087)
1.500
(0.059)
0.870 (0.034)
0.235 (0.009)
0.355 (0.014)
0.350 (0.014)
1
0.650 (0.026)
0.300 (0.012)
0.950 (0.037)
Dimensions in mm/(Inches)
Return to Index
APPLICATION NOTE
Document Number: 70486
Revision: 21-Jan-08
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11
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000