MUR8100E, RURP8100 Data Sheet January 2000 File Number 2780.4 8A, 1000V Ultrafast Diodes Features The MUR8100E and RUR8100 are ultrafast diodes (trr < 75ns) with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction. • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . <75ns These devices are intended for use as energy steering/ clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast recovery with soft recovery characteristics minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistor. • Avalanche Energy Rated Applications Formerly developmental type TA09617. • General Purpose Ordering Information Packaging PART NUMBER PACKAGE • Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175oC • Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1000V • Planar Construction • Switching Power Supply • Power Switching Circuits JEDEC TO-220AC BRAND MUR8100E TO-220AC MUR8100 RURP8100 TO-220AC RURP8100 NOTE: When ordering, use entire part number. ANODE CATHODE CATHODE (FLANGE) Symbol K A Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified MUR8100E RURP8100 UNITS Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM 1000 V Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM 1000 V DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VR 1000 V Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = 155oC) 8 A Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM (Square Wave 20kHz) 16 A Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave 1 Phase 60Hz) 100 A Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD 75 W Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL 20 mJ Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TSTG, TJ -55 to 175 oC 1 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000 MUR8100E, RURP8100 TC = 25oC, Unless Otherwise Specified. Electrical Specifications SYMBOL TEST CONDITION MIN TYP MAX UNITS IF = 8A - - 1.8 V IF = 8A, TC = 150oC - - 1.5 V VR = 1000V - - 100 µA VR = 1000V, TC = 150oC - - 500 µA IF = 1A - - 85 ns IF = 8A, dIF/dt = 200A/µs - - 100 ns ta IF = 8A, dIF/dt = 200A/µs - 50 - ns tb IF = 8A, dIF/dt = 200A/µs - 30 - ns QRR IF = 8A, dIF/dt = 200A/µs - 500 - nC VR = 10V, IF = 0A - 30 - pF - - 2.0 oC/W VF IR trr CJ RθJC DEFINITIONS VF = Instantaneous forward voltage (pw = 300µs, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time at dIF/dt = 100A/µs (See Figure 9), summation of ta + tb . ta = Time to reach peak reverse current at dIF/dt = 100A/µs (See Figure 9). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9). QRR = Reverse recovery charge. CJ = Junction Capacitance. RθJC = Thermal resistance junction to case. pw = Pulse width. D = Duty cycle. Typical Performance Curves 200 IR , REVERSE CURRENT (µA) IF, FORWARD CURRENT (A) 40 175oC 10 100oC 25oC 1 175oC 10 100oC 1 0.1 25oC 0.01 0.001 0.5 0 0.5 1 1.5 2 2.5 VF, FORWARD VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE 2 3 0 200 400 600 800 1000 VR , REVERSE VOLTAGE (V) FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE MUR8100E, RURP8100 Typical Performance Curves (Continued) 125 100 TC = 100oC, dIF/dt = 200A/µs t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) TC = 25oC, dIF/dt = 200A/µs 80 60 trr 40 ta 20 100 75 trr 50 ta 25 tb tb 0 0.5 1 0 0.5 8 4 IF(AV) , AVERAGE FORWARD CURRENT (A) FIGURE 4. trr, ta AND tb CURVES vs FORWARD CURRENT 150 t, RECOVERY TIMES (ns) TC = 175oC, dIF/dt = 200A/µs 125 trr 75 ta 50 tb 25 0 0.5 1 4 8 8 DC 6 SQ. WAVE 4 2 0 140 145 150 FIGURE 5. trr, ta AND tb CURVES vs FORWARD CURRENT CJ , JUNCTION CAPACITANCE (pF) 80 60 40 20 50 100 150 200 VR , REVERSE VOLTAGE (V) FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE 3 160 165 170 FIGURE 6. CURRENT DERATING CURVE 100 0 155 TC , CASE TEMPERATURE (oC) IF, FORWARD CURRENT (A) 0 8 IF, FORWARD CURRENT (A) FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT 100 4 1 IF, FORWARD CURRENT (A) 175 MUR8100E, RURP8100 Test Circuits and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L DUT CURRENT SENSE RG IF + VGE - IGBT t1 VDD dIF trr dt ta tb 0 0.25 IRM t2 IRM FIGURE 8. trr TEST CIRCUIT FIGURE 9. trr WAVEFORMS AND DEFINITIONS I = 1A L = 40mH R < 0.1Ω EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) VAVL L CURRENT SENSE R + VDD IL IL I V Q1 VDD DUT t0 FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT t1 t2 t FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com 4