ROHM RB060L

Schottky barrier diode
RB060L-40
•Applications
Rectifying small power
•Dimensions (Unit : mm)
•Land size figure
2.0
0.1±0.02
0.1
②
4.2
5.0± 0 .3
6
①
1 .2± 0.3
3
4.5 ± 0.2
•Features
1)Small power mold type.
(PMDS)
2) Low IR
3) High reliability
2.0
2.6±0.2
PMDS
•Construction
Silicon epitaxial planar
2.0±0.2
1.5±0.2
•Structure
ROHM : PMDS
JEDEC : SOD-106
①
② Manufacture Date
•Taping dimensions (Unit : mm)
2.0±0.05
4.0±0.1
0.3
12±0.2
5.5±0.05
5.3±0.1
0.05
9.5±0.1
1.75±0.1
φ1.55±0.05
φ1.55
2.9±0.1
4.0±0.1
2.8MAX
•Absolute maximum ratings (Ta=25 °C)
Parameter
Limits
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
(*1) Mounted on epoxy board. 180°Half sine wave
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak (60Hz・1cyc)
Junction temperature
Storage temperature
•Electrical characteristic (Ta=25 °C)
Parameter
Forward voltage
Reverse current
Thermal impedance
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©2009 ROHM Co., Ltd. All rights reserved.
Unit
V
V
A
A
°C
°C
40
40
2
70
125
-40 to +125
Conditions
Symbol
VF1
Min.
Typ.
Max.
Unit
-
-
0.50
V
IF=2.0A
VF2
-
-
0.45
V
IF=1.0A
IR
-
-
1
90
120
mA
VR=40V
θj-a
θj-a
-
1/3
°C/W
Mounteing on alumina board
Mounted on epxy board
2009.05 - Rev.G
RB060L-40
10
1000000
f =1MHz
Ta=25℃
Ta=150℃
Ta=-25℃
0.1
Ta=125℃
10000
1000
Ta=75℃
100
Ta=25℃
10
1
Ta=-25℃
0.1
100
10
0.01
0.01
0
100
200
300
400
500
0
600
5
FORWARD VOLTAGE:VF(mV)
VF-I F CHARACTERISTICS
10
15 20 25 30
1
35 40
0
AVE:460.4mV
440
80
70
60
50
40
30
AVE:9.069uA
20
430
150
AVE:157.0A
50
550
AVE:579.1pF
540
530
520
510
500
Ct DISPERSION MAP
200
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
15
If sm
8.3ms
150
10
AVE:9.3ns
50
0
0
1
I FSM DISRESION MAP
1000
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
t
150
100
50
0
1
10
TIME:t(ms)
I FSM-t CHARACTERISTICS
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©2009 ROHM Co., Ltd. All rights reserved.
D=1/2
100
DC
Rth(j-a)
100
200
100
2
Mounted on epoxy board
FORWARD POWER
DISSIPATION:Pf(W)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Ifsm
250
10
NUMBER OF CY CLES
I FSM-CY CLE CHARACTERISTICS
trr DISPERSION MAP
300
8.3ms
1cy c
100
5
0
30
560
PEAK SURGE
FORWARD CURRENT:IFSM(A)
RESERVE RECOVERY TIME:trr(ns)
8.3ms
100
570
0
20
1cyc
25
Ta=25℃
f =1MHz
VR=0V
n=10pcs
IR DISPERSION MAP
Ifsm
20
580
10
VF DISPERSION MAP
200
15
590
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
460
450
Ta=25℃
VR=40V
n=30pcs
90
REVERSE CURRENT:IR(uA)
470
10
600
100
Ta=25℃
IF=2A
n=30pcs
5
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
VR-I R CHARACTERISTICS
480
FORWARD VOLTAGE:VF(mV)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(uA)
FORWARD CURRENT:IF(A)
Ta=125℃
1
1000
Ta=150℃
100000
Ta=75℃
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Data Sheet
Rth(j-c)
10
arial
IM=10mA
IF=1A
1
1ms
Sin(θ=180)
1
time
300us
0.1
0.001
0.01
0.1
1
10
100
TIME:t(s)
Rth-t CHARACTERISTICS
2/3
1000
0
0
1
2
3
4
5
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
2009.05 - Rev.G
RB060L-40
Data Sheet
5
5
Io
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
0A
REVERSE POWER
DISSIPATION:PR (W)
8
6
D=1/2
4
DC
Sin(θ=180)
2
0V
4
DC
VR
t
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
10
D=t/T
VR=20V
Tj=125℃
T
3
D=1/2
2
1
0A
Io
0V
VR
t
4
DC
T
D=t/T
VR=20V
Tj=125℃
3
D=1/2
2
1
Sin(θ=180)
Sin(θ=180)
0
0
0
0
5
10
15
20
25
30
35
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
40
0
25
50
75
100
125
0
25
50
75
100
AMBIENT TEMPERATURE:Ta(℃)
CASE TEMPARATURE:Tc(℃)
Derating Curv e゙(Io-Ta)
Derating Curv e゙(Io-Tc)
125
30
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
No break at 30kV
25
20
15
AVE:17.6kV
10
5
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
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©2009 ROHM Co., Ltd. All rights reserved.
3/3
2009.05 - Rev.G
Notice
Notes
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The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
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The Products are not designed or manufactured to be used with any equipment, device or
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