QS5U34 Transistors 1.8V Drive Nch+SBD MOSFET QS5U34 zDimensions (Unit : mm) zStructure Silicon N-channel MOSFET Schottky Barrier DIODE TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 zFeatures 1) The QS5U34 combines Nch MOSFET with a Schottky barrier diode in a single TSMT5 package. 2) Low on-state resistance with fast switching. 3) Low voltage drive (1.8V). 4) The Independently connected Schottky barrier diode has low forward voltage. 0.85 0~0.1 0.3~0.6 (1) 0.4 0.16 Each lead has same dimensions Abbreviated symbol : U34 zApplications Load switch, DC / DC conversion zEquivalent circuit zPackaging specifications Package Type Code Basic ordering unit (pieces) Taping (5) (4) TR 3000 QS5U34 ∗2 ∗1 (1) (2) ∗1 ESD protection diode ∗2 Body diode (3) (1)Gate (2)Source (3)Anode (4)Cathode (5)Drain 1/4 QS5U34 Transistors zAbsolute maximum ratings (Ta=25°C) <MOSFET> Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 Tch PD ∗3 Limits 20 10 ±1.5 ±3.0 0.6 2.4 150 0.9 Unit V V A A A A °C W/ELEMENT <Di> Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Power dissipation VRM VR IF IFSM Tj PD 30 20 0.5 2.0 150 0.7 V V A A °C W/ELEMENT <MOSFET AND Di> Total power dissipation Range of Storage temperature PD ∗3 Tstg Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Channel temperature Power dissipation ∗2 ∗3 1.25 −55 to +150 W / TOTAL °C ∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz•1cyc. ∗3 Mounted on a ceramic board zElectrical characteristics (Ta=25°C) <MOSFET> Symbol Parameter Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge RDS (on) ∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Min. − 20 − 0.3 − − − 1.6 − − − − − − − − − − Typ. − − − − 130 170 220 − 110 18 15 5 5 20 3 1.8 0.3 0.3 Max. 10 − 1 1.3 180 240 310 − − − − − − − − 2.5 − − Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=10V / VDS=0V ID=1mA, / VGS=0V VDS=20V / VGS=0V VDS=10V / ID=1mA ID=1.5A, VGS=4.5V ID=1.5A, VGS=2.5V ID=0.8A, VGS=1.8V VDS=10V, ID=1.5A VDS=10V VGS=0V f=1MHz ID=1.0A VDD 10V VGS=4.5V RL=10Ω RG=10Ω VDD 10V VGS=4.5V ID=1.5A − − 1.2 V IS=0.6A / VGS=0V − − − − − − 0.36 0.47 100 V V µA IF=0.1A IF=0.5A VR=20V ∗Pulsed <MOSFET>Body diode (source-drain) VSD Forward voltage <Di> Forward voltage VF Reverse current IR 2/4 QS5U34 Transistors zElectrical characteristic curves <MOSFET> 1000 Ta=25°C VDD=10V VGS=4.5V RG=10Ω Pulsed SWITCHING TIME : t (ns) Ciss 100 100 tf td(off) 10 td(on) tr Coss Crss 0.1 1 10 1 0.01 100 0.1 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (mΩ) VDS=10V Pulsed Ta=125°C 75°C 25°C −25°C 0.1 0.01 0.001 0.0001 0.0 0.5 1.0 1.5 2.0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) VGS=1.8V Pulsed 100 0.1 1 DRAIN CURRENT : ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current ( Ι ) 10 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Fig.3 Dynamic Input Characteristics 10 350 VGS=0V Pulsed 300 ID=1.5A 250 200 ID=0.8A 100 Ta=125°C 75°C 1 25°C −25°C 0.1 50 0 0 1 2 3 4 5 6 7 8 9 10 0.01 0.0 0.5 VGS=2.5V Pulsed Ta=125°C 75°C 25°C −25°C 100 10 0.01 0.1 1 DRAIN CURRENT : ID (A) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙ ) 1.5 Fig.6 Source Current vs. Source-Drain Voltage Fig.5 Static Drain-Source On-State Resistance vs. Gate-source Voltage 1000 1.0 SOURCE-DRAIN VOLTAGE : VSD (V) GATE-SOURCE VOLTAGE : VGS (V) 25°C −25°C 10 0.01 0 0.0 0.2 Ta=25°C Pulsed Fig.4 Typical Transfer Characteristics Ta=125°C 75°C 1 Fig.2 Switching Characteristics 400 GATE-SOURCE VOLTAGE : VGS (V) 1000 2 TOTAL GATE CHARGE : Qg (nC) 450 150 3 10 500 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) DRAIN CURRENT : ID (A) 10 Ta=25°C VDD=10V ID=1.5A 4 RG=10Ω Pulsed DRAIN CURRENT : ID (A) DRAIN-SOURCE VOLTAGE : VDS (V) Fig.1 Typical Capacitance vs. Drain-Source Voltage 1 SOURCE CURRENT : IS (A) 10 0.01 5 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) CAPACITANCE : C (pF) Ta=25°C f=1MHz VGS=0V GATE-SOURCE VOLTAGE : VGS (V) 1000 1000 VGS=4.5V Pulsed Ta=125°C 75°C 25°C −25°C 100 10 0.01 0.1 1 10 DRAIN CURRENT : ID (A) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙΙ ) 3/4 QS5U34 Transistors 100 Ta=125 C 75 C 25 C −25 C 100 Reverse Current : IR[mA] Forward Current : IF [mA] 1000 10 125°C 10 1 75°C 0.1 25°C 0.01 1 −25°C 0.001 0.1 0.0001 0 0.1 0.2 0.3 0.4 0.5 0.6 Forward Voltage :VF [V] Fig.10 Forward Temperature Characteristics 0 10 20 30 40 Reverse Voltage : VR[V] Fig.11 Reverse Temperature Characteristics zNotice 1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature, and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway. This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the surrounding temperature, generating heat of MOSFET and the reverse current. 2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2007 ROHM CO.,LTD. THE AMERICAS / EUPOPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0