NTE5538

NTE5538
Silicon Controlled Rectifier (SCR)
800V, 50 Amp, TO218 Isolated
Description:
The NTE5538 general purpose SCR is suited for power supplies up to 400Hz on resistive or inductive
loads.
Applications:
D Motor Control
D Overvoltage Crowbar Protection
D Capacitive Discharge Ignition
D Voltage Regulation
D Welding Equipment
D Capacitive Filter Soft Start (Inrush Current Control)
Absolute Maximum Ratings: (TJ = +25°C unless otherwise specified)
Peak Forward Blocking Voltage, VDRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Peak Reverse Blocking Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
RMS On−State Current (TFull Sine Wave, TC = +80°C), IT (RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . 50A
Average On−State Current (TC = +80°C), IT(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32A
Non−Repetitive Surge Peak On−State Current (Full Cycle, TJ initial = +25°C), ITSM
(f = 50Hz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500A
(f = 60Hz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 525A
I2t Value for Fusing (tp = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1250A2sec
Critical Rate of Rise of On−State Current (IG = 2 x IGT, tr < 100ns, TJ = +125°C), di/dt . . . 100A/μs
Peak Gate Current (tp = 20ms, TJ = +125°C), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Average Gate Power Dissipation (TJ = +125°C), PG (AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Maximum Peak Reverse Gate Voltage, VRGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +150°C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1°C/W
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50°C/W
Rev. 4−10
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Gate Trigger Current
Gate Trigger Voltage
IGT
VGT
VD = 12V, RL = 30Ω
Gate Non−Trigger Voltage
VGD
TJ = +125°C, VD = 800V, RL = 3.3kΩ
Min
Typ
Max Unit
−
−
60
mA
−
−
1.3
V
0.2
−
−
V
Holding Current
IH
IT = 500mA, Gate Open
−
−
180
mA
Latching Current
IL
IG = 1.2IGT
−
−
90
mA
100
0
−
−
V/μs
Critical Rate of Rise of
Off−State Voltage
dv/dt
TJ = +125°C, VDRM = 536V, Gate Open
Peak On−State Voltage
VTM
ITM = 150A, tp = 380μs
−
−
1.6
V
Forward Leakage Current
IDRM
VDRM = 800V
−
−
5
μA
Reverse Leakage Current
IRRM
VDRM = 800V, TJ = +125°C
−
−
4
mA
.600 (15.24)
.060 (1.52)
.173 (4.4)
Isol
.156
(3.96)
Dia.
K
A
.550
(13.97)
.430
(10.92)
G
.500
(12.7)
Min
.055 (1.4)
.015 (0.39)
.215 (5.45)
NOTE: Dotted line indicates
that case may have square
corners.