ROHM RB162M-60

Data Sheet
Schottky Barrier Diode
RB162M-60
lApplications
General rectification
lDimensions (Unit : mm)
lLand size figure (Unit : mm)
0.1±0.1
0.05
1.2
3.5±0.2
①
lFeatures
1)Small power mold type.(PMDU)
2)Low IR
3)High reliability
2.6±0.1
3.05
0.85
1.6±0.1
PMDU
lConstruction
Silicon epitaxial planer
lStructure
0.9±0.1
0.8±0.1
ROHM : PMDU
JEDEC :SOD-123
Manufacture Date
lTaping dimensions (Unit : mm)
1.81±0.1
lAbsolute maximum ratings (Ta=25C)
Parameter
Symbol
VRM
Reverse voltage (repetitive)
VR
Reverse voltage (DC)
Average rectified forward current (*1)
Io
IFSM
Forward current surge peak (60Hz・1cyc)
Junction temperature
Tj
Storage temperature
Tstg
(*1)Mounting on glass epoxi board Tc=90°C max.
lElectrical characteristics (Ta=25C)
Parameter
Symbol
VF
Forward voltage
Reverse current
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© 2011 ROHM Co., Ltd. All rights reserved.
IR
φ 1.0±0.1
Limits
60
60
1
20
150
3.71±0.1
1.5MAX
Unit
V
V
A
A
C
C
-40 to +150
Min.
Typ.
Max.
Unit
-
-
0.65
V
-
-
100
μA
1/4
8.0±0.2
φ 1.55±0.05
4.0±0.1
0.25±0.05
1.75±0.1
2.0±0.05
3.5±0.05
4.0±0.1
Conditions
IF=1A
VR=60V
2011.10 - Rev.A
Data Sheet
RB162M-60
100000
1
10000
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(A)
Tj=125°C
Tj=150°C
Tj=150°C
Tj=125°C
0.1
Tj=25°C
Tj=75°C
1000
Tj=75°C
100
10
Tj=25°C
1
0.01
0.1
0
200
400
600
0
20
40
1000
560
FORWARD VOLTAGE:VF(mV)
f=1MHz
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
60
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
100
10
Tj=25°C
IF=1A
n=20pcs
540
520
500
AVE:515.2mV
480
1
460
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
200
Tj=25°C
VR=60V
n=20pcs
10
Tj=25°C
f=1MHz
VR=0V
n=10pcs
190
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(nA)
100
AVE:6.0uA
180
170
160
150
AVE:168.0pF
140
130
120
110
1
100
IR DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
Ct DISPERSION MAP
2/4
2011.10 - Rev.A
Data Sheet
RB162M-60
100
30
REVERSE RECOVERY TIME:trr(ns)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Tj=25°C
IF=0.1A
IR=0.1A
Irr=0.1*IR
n=10pcs
1cyc
IFSM
80
8.3ms
60
AVE:61.6A
40
20
20
10
AVE:11.6ns
0
0
IFSM DISPERSION MAP
trr DISPERSION MAP
1000
1000
8.3ms
100
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
IFSM
8.3ms
1cyc.
10
IFSM
100
10
1
1
1
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1
100
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
25
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
100
1000
No break at 30kV
20
15
AVE:5.0kV
5
0
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
30
10
time
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
Rth(j-l)
10
1
0.1
0.001
Rth(j-a)
On glass-epoxy substrate
soldering land
6mm×6mm
0.01
0.1
1
10
100
1000
TIME:t(s)
Rth-t CHARACTERISTICS
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
100
Rth(j-a)
On glass-epoxy substrate
soldering land
2mm×0.85mm
3/4
2011.10 - Rev.A
Data Sheet
RB162M-60
Io
0A
0V
1.4
2
D.C.
1.2
t
1.8
T
D=0.8
VR
D=t/T
VR=30V
Tj=150°C
D=0.5
1
half sin wave
0.8
0.6
0.4
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
FORWARD POWER
DISSIPATION:Pf(W)
1.6
D.C.
1.4
D=0.8
1.2
D=0.5
1
half sin wave
0.8
0.6
0.4
0.2
0.2
0
0
0
0
0.5
1
1.5
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
30
60
90
120
150
CASE TEMPERATURE:Tl(°C)
DERATING CURVE (Io-Tl)
4/4
2011.10 - Rev.A
Notice
Notes
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R1120A