ROHM RB550EA

RB550EA
Diodes
Schottky barrier diode
RB550EA
z Land size figure (Unit : mm)
z External dimensions (Unit : mm)
zApplications
Low current rectification
2.9±0.1
+0.1
0.16±0.1
0.06
0.4 -0.05 Each
各リードとも同寸法
lead has same dimension
zFeatures
1) Small mold type. (TSMD5)
2) Low VF, low IR.
3) High reliability.
(5)
2.4
1.0 min.
0.8
(4)
(2)
0.95
(3)
0~0.1
0.33±0.03
0.7±0.1
0.95
0.95
1.9
zStructure
1.0Max
zConstruction
Silicon epitaxial planar
0.35 0.45
TSMD5
0.85±0.1
1.9±0.2
0.7
0.95
0.3~0.6
+0.2
-0.1
1.6
(1)
2.8±0.2
0.45 0.35
ROHM : TSMD5
dot(year week factory) + day
z Taping specifications (Unit : mm)
φ1.55±0.05
2.0±0.05
0.3±0.1
3.2±0.08
3.5±0.05
3.2±0.08
5.5±0.2
0~0.5
φ1.1±0.1
4.0±0.1
3.2±0.08
8.0±0.2
1.75±0.1
4.0±0.1
1.1±0.08
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (DC)
Average rectified forward current (*1)
Forward current surge peak (t=1msec)
Junction temperature
Storage temperature
Limits
30
0.7
12
150
-40 to +150
Symbol
VR
Io
IFSM
Tj
Tstg
Unit
V
A
A
℃
℃
(*1) Rating of per diode.
zElectrical characteristics (Ta=25°C, Rating of per diode.)
Parameter
Symbol
VF1
Min.
0.39
Typ.
0.45
Max.
0.49
Unit
V
Reverse current
IR1
IR2
-
1
5.0
30.00
50
µA
µA
ESD break down voltage
ESD
15
-
-
KV
Forward voltage
Conditions
IF=0.7A
VR=10V
VR=30V
C=100PF,R=1.5KΩ
Forwad and reverse : 1 times
1/3
RB550EA
Diodes
zElectrical characteristic curves (Ta=25°C)
100000
Ta=75℃
Ta=150℃
Ta=25℃
Ta=-25℃
0.01
1000
Ta=75℃
100
10
Ta=25℃
1
Ta=-25℃
0.1
0
100
200
300
400
500
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
0
600
10
5
10
15
20
25
1
30
0
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
490
460
450
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
470
20
15
10
AVE:3.141uA
5
180
170
160
150
140
130
120
VF DISPERSION MAP
100
Ct DISPERSION MAP
IR DISPERSION MAP
30
20
8.3ms
20
15
AVE:15.1A
10
5
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
20
PEAK SURGE
FORWARD CURRENT:IFSM(A)
1cyc
Ifsm
RESERVE RECOVERY TIME:trr(ns)
30
25
AVE:149.9pF
110
0
440
15
10
AVE:8.3ns
5
0
0
Ifsm Ifsm
15
8.3ms 8.3ms
8.3ms
8.3ms
1cyc
1cyc
10
5
0
1
trr DISPERSION MAP
IFSM DISRESION MAP
1000
Ifsm
t
20
15
10
5
0
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
100
IM=10mA
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
1
Mounted on epoxy board
IF=0.2A
0.8
1ms
time
Rth(j-a)
300us
100
Rth(j-c)
FORWARD POWER
DISSIPATION:Pf(W)
25
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
30
30
Ta=25℃
f=1MHz
VR=0V
n=10pcs
190
Ta=25℃
VR=30V
n=30pcs
25
REVERSE CURRENT:IR(nA)
480
5
10
15
20
25
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
200
30
Ta=25℃
IF=0.7A
n=30pcs
AVE:459.6mV
PEAK SURGE
FORWARD CURRENT:IFSM(A)
100
0.01
0.001
FORWARD VOLTAGE:VF(mV)
f=1MHz
Ta=125℃
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=125℃
0.1
1000
Ta=150℃
10000
REVERSE CURRENT:IR(uA)
FORWARD CURRENT:IF(mA)
1
D=1/2
0.6
Sin(θ=180)
DC
0.4
0.2
10
0.001
0
0.1TIME:t(s) 10
Rth-t CHARACTERISTICS
1000
0
0.5
1
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
1.5
2/3
RB550EA
Diodes
1.5
0A
0V
DC
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
REVERSE POWER
DISSIPATION:PR (W)
0.8
0.6
D=1/2
0.4
DC
Sin(θ=180)
0.2
t
T
D=1/2
1
Io
VR
D=t/T
VR=15V
Tj=150℃
0.5
Sin(θ=180)
0
0
0
10
20
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
30
1.5
25
50
75
100
125
AMBIENT TEMPERATURE:Ta(℃)
Derating Curve゙(Io-Ta)
150
Sin(θ=180)
1
0.5
Io
0A
0V
t
T
0
0
DC
D=1/2
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
1
0
25
50
VR
D=t/T
VR=15V
Tj=150℃
75
100
125
150
CASE TEMPARATURE:Tc(℃)
Derating Curve゙(Io-Tc)
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1