NTE2393 MOSFET N−Channel Enhancement Mode, High Speed Switch TO3P Type Package Description: The NTE2393 is an N−Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive and very fast switching times make this device ideal for high speed switching applications. Typical applications include switching mode power supplies, uninterruptible power supplies, and motor speed control. Features: D High Voltage: 500V for Off−Line SMPS D High Current: 9A for up to 350W SMPS D Ultra Fast Switching for Operation at less than 100kHz Industrial Applications: D Switching Mode Power Supplies D Motor Controls D G S Absolute Maximum Ratings: Drain−Source Voltage (VGS = 0), VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Drain−Gate Voltage (RGS = 20k), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Continuous Drain Current, ID TC = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9A TC = +100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.6A Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36A Clamped Drain Inductive Current (Note 1), IDLM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36A Total Dissipation (TC = +25 C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W Derate Above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W/ C Maximum Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150 C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150 C Maximum Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83 C/W Maximum Lead Temperature (During Soldering), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +275 C Note 1. Pulse width limited by safe operating area. Rev. 10−13 Electrical Characteristics: (TC = +25 C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 500 − − V VGS = 0, VDS = Max Rating − − 250 A VGS = 0, VDS = 400V, TC = +125 C − − 1000 A VDS = 0, VGS = 20V − − 100 nA OFF Characteristics Drain−Source Breakdown Voltage V(BR)DSS ID = 250A, VGS = 0 Zero−Gate Voltage Drain Current Gate−Body Leakage Current IDSS IGSS ON Characteristics (Note 2) Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2 − 4 V Static Drain−Source On Resistance RDS(on) VGS = 10V, ID = 4.5A − − 0.7 VGS = 10V, ID = 4.5A, TC = 100 C − − 1.4 − − mho Dynamic Characteristics Forward Transconductance gfs VDS = 25V, ID = 4.5A 5 Input Capacitance Ciss − Output Capacitance Coss VDS = 25V, VGS = 0, f = 1MHz Reverse Transfer Capacitance Crss 1600 1900 pf − − 280 pf − − 170 pf − 30 40 ns − 40 60 ns td(off) − 130 170 ns tf − 30 40 ns ISD − − 9 A Switching Characteristics Turn−On Time Rise Time Turn−Off Delay Time Fall Time td(on) tr VDD = 250V, ID = 4.5A, RI = 4.7 VI = 10V Source Drain Diode Characteristics Source−Drain Current Source−Drain Current (Pulsed) ISDM Note 2 − − 36 A Forward ON Voltage VSD ISD = 9A, VGS = 0 − − 1.15 V trr IDS = 9A, VGS = 0, di/dt = 100A/s − 420 − ns Reverse Recovery Time Note 2. Pulse width limited by safe operating area. Note 3. Pulsed: Pulse Duration = 300s, Duty Cycle 1.5% .190 (4.82) .615 (15.62) D .787 (20.0) .591 (15.02) .787 (20.0) .126 (3.22) Dia G D S .215 (5.47)