2397

NTE2397
MOSFET
N−Ch, Enhancement Mode
High Speed Switch
TO220 Type Package
Features:
D Dynamic dv/dt Rating
D Repetitive Avalanche Rated
D Fast Switching
D Ease of Paralleling
D Simple Drive Requirements
D
G
S
Absolute Maximum Ratings:
Continuous Drain Current (VGS = 10V), ID
TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.3A
Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A
Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W
Derate Linearly Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/C
Gate−to−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Single Pulse Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 520mJ
Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13mJ
Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V/ns
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL . . . . . . . . . . . . . . . . . +300C
Mounting Torque (6−32 or M3 Screw) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfin (1.1Nm)
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0C/W
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62C/W
Typical Thermal Resistance, Case−to−Sink (Flat, Greased Surface), RthCS . . . . . . . . . . . . 0.5C/W
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 2. VDD = 50V, starting TJ = +25C, L = 9.1H, RG = 25 , IAS = 10A
Note 3. ISD 10A, di/dt 120A/s, VDD V(BR)DSS, TJ +150C
Rev. 10−13
Electrical Characteristics: (TJ = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0V, ID = 250A
Breakdown Voltage Temp. Coefficient
V(BR)DSS Reference to +25C, ID = 1mA
TJ
Min
Typ
Max
Unit
400
−
−
V
−
0.49
−
V/C
−
−
0.55
Static Drain−to−Source On−Resistance
RDS(on)
VGS = 10V, ID = 6A, Note 4
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250A
2.0
−
4.0
V
VDS = 50V, ID = 6A, Note 4
5.8
−
−
mhos
VDS = 400V, VGS = 0V
−
−
25
A
VDS = 320V, VGS = 0V, TJ = +125C
−
−
250
A
Forward Transconductance
Drain−to−Source Leakage Current
gfs
IDSS
Gate−to−Source Forward Leakage
IGSS
VGS = 20V
−
−
100
nA
Gate−to−Source Reverse Leakage
IGSS
VGS = −20V
−
−
−100
nA
ID = 10A, VDS = 320V, VGS = 10V,
Note 4
−
−
63
nC
−
−
9.0
nC
−
−
32
nC
−
14
−
ns
−
27
−
ns
td(off)
−
50
−
ns
tf
−
24
−
ns
Between lead, .250in. (6.0) mm from
package and center of die contact
−
4.5
−
nH
−
7.5
−
nH
VGS = 0V, VDS = 25V, f = 1MHz
−
1400
−
pF
Total Gate Charge
Qg
Gate−to−Source Charge
Qgs
Gate−to−Drain (“Miller”) Charge
Qgd
Turn−On Delay Time
td(on)
Rise Time
tr
Turn−Off Delay Time
Fall Time
VDD = 200V, ID = 10A, RG = 9.1 ,
RD = 20 , Note 4
Internal Drain Inductance
LD
Internal Source Inductance
LS
Input Capacitance
Ciss
Output Capacitance
Coss
−
330
−
pF
Reverse Transfer Capacitance
Crss
−
120
−
pF
Min
Typ
Max
Unit
−
−
10
A
Source−Drain Ratings and Characteristics:
Parameter
Symbol
Continuous Source Current (Body Diode)
IS
Test Conditions
Pulsed Source Current (Body Diode)
ISM
Note 1
−
−
40
A
Diode Forward Voltage
VSD
TJ = +25C, IS = 10A, VGS = 0V,
Note 4
−
−
2.0
V
Reverse Recovery Time
trr
−
370
790
ns
Reverse Recovery Charge
Qrr
TJ = +25C, IF = 10A,
di/dt = 100A/s, Note 4
−
3.8
8.2
C
Forward Turn−On Time
ton
Intrinsic turn−on time is neglegible (turn−on is dominated by LS+LD)
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 4. Pulse width 300s; duty cycle 2%.
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Gate
.100 (2.54)
Source
Drain/Tab