ROHM RDN120N25

RDN120N25
Transistors
Switching (250V, 12A)
RDN120N25
zExternal dimensions (Unit : mm)
TO-220FN
4.5 +0.3
−0.1
10.0 +0.3
−0.1
5.0±0.2 8.0±0.2
15.0 +0.4
−0.2
14.0±0.5
zApplication
Switching
1.2
+0.2
2.8 −0.1
3.2±0.2
12.0±0.2
zFeatures
1) Low on-resistance.
2) Low input capacitance.
3) Exellent resistance to damage from static electricity.
1.3
0.8
(1) Gate
(2) Drain
(3) Source
zStructure
Silicon N-channel
MOS FET
Drain Current
Reverse Drain
Current
Continuous
Pulsed
Continuous
Pulsed
Avalanche Current
Avalanche Energy
Total Power Dissipation (TC=25°C)
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP ∗1
IDR
IDRP ∗1
IAS ∗2
EAS ∗2
PD
Tch
Tstg
∗1 Pw ≤ 10µs, Duty cycle ≤ 1%
∗2 L 2.4mH, VDD=50V, RG=25Ω, 1Pulse, Tch=25°C
+0.1
2.54±0.5 0.75 −0.05
2.6±0.5
(1) (2) (3)
zEquivalent circuit
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
2.54±0.5
Limits
250
±30
12
48
12
48
12
216
40
150
−55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C
°C
Drain
Gate
∗Gate
Protection
Diode
Source
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
1/4
RDN120N25
Transistors
zElectrical characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
IGSS
⎯
⎯
±10
µA
Drain-Source Breakdown Voltage
V(BR) DSS
250
⎯
⎯
V
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
25
µA
VDS=250V, VGS=0V
Gate Threshold Voltage
VGS (th)
2.0
⎯
4.0
V
VDS=10V, ID=1mA
Static Drain-Source On-State
Resistance
RDS (on)
⎯
0.16
0.21
Ω
ID=6A, VGS=10V
Forward Transfer Admittance
VDS=10V, ID=6.0A
Parameter
Gate-Source Leakage
Conditions
VGS= ±30V, VDS=0V
⏐Yfs⏐
3.7
6.1
⎯
S
Input Capacitance
Ciss
⎯
1224
⎯
pF
VDS=10V
Output Capacitance
Coss
⎯
443
⎯
pF
VGS=0V
Reverse Transfer Capacitance
Crss
⎯
154
⎯
pF
f=1MHz
Turn-On Delay Time
td (on)
⎯
17
⎯
ns
ID=6.0A, VDD 100V
tr
⎯
32
⎯
ns
VGS=10V
Rise Time
td (off)
⎯
58
⎯
ns
RL=16.7Ω
Fall Time
tf
⎯
28
⎯
ns
RGS=10Ω
Reverse Recovery Time
trr
⎯
169
⎯
ns
IDR=12A, VGS=0V
Reverse Recovery Charge
Qrr
⎯
0.95
⎯
µC
di / dt=100A / µs
Total Gate Charge
Qg
⎯
31
⎯
nC
VDD=125V,VGS=10V,ID=12A
Turn-Off Delay Time
zElectrical characteristic curves
20
DRAIN CURRENT : ID (A)
s
0µ
10
S
10
Pw
0
=1
S
m
Operation in this D
C
area is limited
O
pe
by RDS(on)
ra
tio
1
n
6V
8V
16
14
12
10
8
5V
6
4
1
10
100
1000
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.1 Maximun Safe
Operating Area
0
VDS=10V
Pulsed
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
1
0.1
VGS=4V
2
0.1
100
Ta=25°C
Pulsed
7V
10V
18
DRAIN CURRENT : ID (A)
TC=25°C
Single Pulse
1m
DRAIN CURRENT : ID (A)
100
0
1
2
3
4
5
6
7
8
9
10
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.2 Typical Output Characteristics
0.01
0
1
2
3
4
5
6
6
GATE-SOURCE VOLTAGE : VGS (V)
Fig.3 Typical Transfer
Characteristics
2/4
RDN120N25
4.8
4
3.2
2.4
1.6
0.8
0
−50 −25
0
25
50
75
100 125 150
0.1
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.01
0.01
0.1
CHANNEL TEMPERATURE : Tch (°C)
50
0.3
0.25
ID=12A
0.2
6A
0.15
0.1
25
50
75
5
2
1
0.5
0.2
0.05 0.1 0.2
100 125 150
1000
Coss(pF)
100
Crss(pF)
10
0.1
1
10
100
1000
DRAIN SOURCE VOLTAGE : VDS (V)
Fig.10 Typical Capacitance vs.
Drain-Source Voltage
0.5 1
2
5
10 20
50
Ta=25°C
ID=12A
Pulsed
VDS
175
150
VDD=50V
VDD=125V
VDD=200V
125
VGS
12.5
100
75
VDD=50V
VDD=125V
VDD=200V
50
25
0
0
10
20
20
25
30
VGS=0V
Pulsed
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
1
0.1
0.01
0
0.2
0.4
0.6
0.8
1
1.2
Fig.9 Reverse Drain Current vs.
Source-Drain Voltage
25
200
15
SOURCE-DRAIN VOLTAGE : VSD (V)
250
225
10
10
Fig.8 Forward Transfer Admittance
vs. Drain Current
DRAIN-SOURCE VOLTAGE : VDS (V)
CAPACITANCE : C (pF)
Ciss(pF)
5
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source
On-State Resistance vs.
Channel Temperature
f=1MHz
VGS=0V
Ta=25°C
Pulsed
0
100
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
10
CHANNEL TEMPERATURE : Tch (°C)
10000
0
Fig.6 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
30
0
40
TOTAL GATE CHARGE : Qg (nC)
Fig.11 Dynamic Input Characteristics
1000
GATE-SOURCE VOLTAGE : VGS (V)
0
ID=12A
6A
GATE-SOURCE VOLTAGE : VGS (V)
0.05
0
−50 −25
0.5
100
VDS=10V
Pulsed
20
FORWARD TRANSFER
ADMITTANCE :⏐Yfs⏐(S)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (Ω)
0.35
10
1
Fig.5 Static Drain-Source
On-State Resistance
vs. Drain Current
VGS=10V
Pulsed
0.4
1
Ta=25°C
Pulsed
DRAIN CURRENT : ID (A)
Fig.4 Gate Threshold Voltage
vs. Channel Temperature
0.45
1.5
VGS=10V
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (Ω)
5.6
1
REVERSE DRAIN CURRENT : IDR (A)
VDS=10V
ID=1mA
REVERSE RECOVERY TIME : trr (ns)
6.4
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (Ω)
GATE THRESHOLD VOLTAGE : VGS (th) (V)
Transistors
Ta=25°C
di / dt=100A / µs
VGS=0V
Pulsed
100
10
0.1
1
10
100
REVERSE DRAIN CURRENT : IDR (A)
Fig.12 Reverse Recovery Time
vs. Reverse Drain Current
3/4
RDN120N25
Transistors
Ta=25°C
VDD=100V
VGS=10V
RG=10Ω
Pulsed
tr
td (off)
100
tr
td (on)
10
0.1
1
10
100
DRAIN CURRENT : ID (A)
Fig.13 Switching Characteristcs
10
NORMALIZED TRANSIENT
THERMAL RESISTANCE : r (t)
SWITCHING TIME : t (ns)
1000
1 D=1
0.5
0.2
0.1
0.1
0.05
Tc=25°C
θth(ch-c)(t)=r(t) • =θth(ch-c)
θth(ch-c)=3.13°C / W
0.02
0.01 0.01
Single pulse
PW
0.001
10µ
T
100µ
1m
10m
100m
D= PW
T
1
10
PULSE WIDTH : PW (S)
Fig.14 Normalized Transient
Thermal Resistance vs.
Pulse Width
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1