ROHM RB162VA-20

Data Sheet
Schottky barrier Diode
RB162VA-20
Applications
General rectification
Dimensions (Unit : mm)
Land size figure (Unit : mm)
1.1
+0.1
2.0
0.17 −0.05
0.8 0.5
Feature
1)Small mold type (TUMD2)
2)Low VF
3)High reliability
TUMD2
Structure
Silicon epitaxial planer
Structure
0.6
+0.2
−0.1
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Reverse voltage (repetitive)
VRM
Reverse voltage (DC)
VR
Average rectified forward current
Io
Forward current surge peak (60Hz/1cyc)
IFSM
Junction temperature
Tj
Storage temperature
Tstg
Electrical characteristics (Ta=25C)
Parameter
Symbol
VF
Forward voltage
Reverse current
IR
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© 2011 ROHM Co., Ltd. All rights reserved.
Limits
Unit
V
V
A
A
C
C
25
20
1.0
5.0
125
40 to 125
Min.
-
Typ.
0.36
Max.
0.4
Unit
V
-
0.3
1.2
mA
1/3
Conditions
IF=1.0A
VR=20V
2011.04 - Rev.A
Data Sheet
RB162VA-20
Electrical characteristics curves
1000
REVERSE CURRENT : IR(A)
1
Ta=75C
0.1
Ta=25C
0.01
Ta=125C
10000
Ta=75C
1000
100
Ta=25C
10
Ta=-25C
0.001
0.0
Ta=-25C
1
0.1
0.2
0.3
0.4
0
0.5
10
400
REVERSE CURRENT : IR(A)
360
340
320
350
300
AVE : 354A
250
5
8.3ms
15
10
5
AVE : 14.6A
25
20
15
10
5
Ta=25C
f=1MHz
VR=0V
n=30pcs
176
174
172
170
168
166
164
AVE:172pF
162
160
25
Ifsm
8.3ms
20
15
10
5
0
1
IFSM DISRESION MAP
Ifsm
t
20
15
10
5
0
On glass-epoxy board
IM=10mA
IF=0.1A
time
1ms
Rth(j-a)
300s
100
Rth(j-c)
10
1
10
TIME : t(ms)
IFSM-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
100
0.001
100
0.3
FORWARD POWER
DISSIPATION : Pf(W)
TRANSIENT
THAERMAL IMPEDANCE : Rth (C/W)
PEAK SURGE
FORWARD CURRENT : I FSM(A)
1000
25
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
trr DISPERSION MAP
30
8.3ms
1cyc
AVE : 7.70ns
0
0
20
30
Ta=25C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
PEAK SURGE
FORWARD CURRENT : I FSM(A)
REVERSE RECOVERY TIME : trr(ns)
1cyc
Ifsm
15
Ct DISPERSION MAP
30
30
10
178
IR DISPERSION MAP
VF DISPERSION MAP
PEAK SURGE
FORWARD CURRENT : I FSM(A)
1
180
Ta=25C
VR=20V
n=30pcs
400
300
20
10
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
AVE : 371mV
25
100
0
450
Ta=25C
VF=1.0A
n=30pcs
380
f=1MHz
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE : VF(V)
VF-IF CHARACTERISTICS
FORWARD VOLTAGE : V F(mV)
20
CAPACITANCE BETWEEN TERMINALS :
Ct(pF)
FORWARD CURRENT : I F(A)
Ta=125C
CAPACITANCE BETWEEN TERMINALS :
Ct(pF)
100000
10
0.2
D=1/2
DC
Sin(=180)
0.1
0
0.01
0.1
1
10
TIME : t(s)
Rth-t CHARACTERISTICS
2/3
100
1000
0
0.1
0.2
0.3
0.4
0.5
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
2011.04 - Rev.A
AVERAGE RECTIFIDE
FORWARD CURRENT : Io(A)
0.5
2
D=1/2
DC
1
Sin(=180)
0A
Io
0V
VR
t
0.4
DC
0.3
T
D=t/T
VR=45V
Tj=125C
D=1/2
0.2
0.1
Sin(θ=180)
0
20
40
60
80
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
0A
Io
0V
VR
t
0.4
DC
D=t/T
VR=45V
Tj=125C
T
0.3
D=1/2
0.2
0.1
Sin(θ=180)
0
0
0
0.5
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
3
REVERSE POWER
DISSIPATION : PR (W)
Data Sheet
RB162VA-20
0
25
50
75
100
AMBIENT TEMPERATURE : Ta(C)
Derating Curve"(Io-Ta)
3/3
125
0
25
50
75
100
125
CASE TEMPARATURE : Tc(C)
Derating Curve"(Io-Tc)
2011.04 - Rev.A
Notice
Notes
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A