SUR2x30-04, SUR2x30-06 Ultra Fast Recovery Epitaxial Diodes Dimensions SOT-227(ISOTOP) SUR2x30-04 SUR2x30-06 VRSM V 400 600 Symbol IFRMS IFAVM IFRM IFSM Test Conditions VISOL Md Weight Inches Min. Max. 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 37.80 30.30 38.20 1.186 1.489 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 V W 3.30 0.780 4.57 0.830 0.130 19.81 0.180 21.08 Unit TVJ=TVJM TC=85oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM 70 30 375 A TVJ=45oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 300 320 260 280 A t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 450 420 340 320 A2s TVJ=150oC TVJ=150oC -40...+150 150 -40...+150 TVJ TVJM Tstg Ptot Millimeter Min. Max. A B Maximum Ratings TVJ=45oC I2t VRRM V 400 600 Dim. o C TC=25oC 100 W 50/60Hz, RMS _ IISOL<1mA 2500 V~ Mounting torque Terminal connection torque (M4) 1.5/13 1.5/13 Nm/lb.in. 30 g SUR2x30-04, SUR2x30-06 Ultra Fast Recovery Epitaxial Diodes Symbol Test Conditions Characteristic Values typ. max. Unit IR TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM 100 50 7 uA uA mA VF IF=30A; TVJ=150oC TVJ=25oC 1.4 1.6 V VTO For power-loss calculations only 1.01 V TVJ=TVJM 7.1 rT RthJC RthCK trr IRM 1.25 0.05 IF=1A; -di/dt=100A/us; VR=30V; TVJ=25oC o _ VR=350V; IF=30A; -diF/dt=240A/us; L<0.05uH; TVJ=100 C m K/W 35 50 ns 10 11 A FEATURES APPLICATIONS ADVANTAGES * International standard package miniBLOC (ISOTOP compatible) * Isolation voltage 2500 V~ * 2 independent FRED in 1 package * Planar passivatd chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating and melting * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses * Operating at lower temperature or space saving by reduced cooling SUR2x30-04, SUR2x30-06 Ultra Fast Recovery Epitaxial Diodes Fig. 1 Forward current versus voltage drop. Fig. 2 Recovery charge versus -diF/dt. Fig. 3 Peak reverse current versus -diF/dt. Fig. 4 Dynamic parameters versus junction temperature. Fig. 5 Recovery time versus -diF/dt. Fig. 6 Peak forward voltage versus diF/dt. Fig. 7 Transient thermal impedance junction to case.