NTE95 Silicon NPN Transistor High Voltage, High Power Switch Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3A Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70W Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5°C/W Operating Junction Temperature Range, Tj(oper) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Collector−Emitter Sustainin Voltage Collector Cutoff Current Symbol Test Conditions VCEO(sus) IC = 25mA DC Current Gain Max Unit 250 − − V VCE = 150V − − 10 µA ICEX VCE = 200V − − 0.25 µA − − 1.0 mA VEB = 5V − − 10 µA VEB = 6V − − 1.0 mA VCE = 5V, IC = 3A 15 − − VCE = 5V, IC = 0.5A 0 5A 90 − 250 35 − − − − 2.0 V − − 2.2 V − − 2.2 V IC = 100mA, f = 20MHz 2.0 − − IC = 250mA, f = 1kHz 30 − − − − 100 IEBO hFE Collector−Emitter Saturation Voltage VCE(sat) Base−Emitter Saturation Voltage VBE(sat) Base−Emitter ON Voltage VBE(on) Small−Signal Current Gain |hFE| Output Capacitance Typ ICEO TC = +150°C Emitter Cutoff Current Min Cob TC = −55°C IC = 3A, IB 0.3A VCE = 5V, IC = 3A VCE = 10V VCB = 10V, IC = 0, f = 1MHz pF T111 .432 (10.95) Collector Base .190 (4.82) Dia Emitter .057 (1.45) Dia (3 Places) 90° REF .347 (8.82) Dia GND REF .705 (17.9) Max .115 (2.92) .370 (9.39) .078 (1.97) Max .420 (10.66) 10−32 NF−2A T059 − Isolated Collector Emitter Base Collector (Isolated) .200 (5.08) Dia .425 (10.8) .349 (8.87) .763 (19.4) Max .394 (10.0) .425 (10.8) .052 (1.32) Dia .120 (3.04) 10−32−UNF−2A