369

NTE369
Silicon NPN Transistor
TV Vertical Deflection, Switch
Description:
The NTE369 is an NPN transistor in a TO66 type case designed for high voltage inverters, converters,
regulators, and switching circuits.
Features:
D High Voltage: VCBO = 800V
D Gain Specified to 200mA
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA
Total Device Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.12°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
400
–
–
V
OFF Characteristics
Collector–Emitter Breakdown Voltage
V(BR)CEO
IC = 10mA, IB = 0
Collector Cutoff Current
ICBO
VCB = 800V
–
–
100
mA
Emitter Cutoff Current
IEBO
VEB = 6V, IC = 0
–
–
100
mA
hFE
IC = 200mA, VCE = 10V
30
–
–
VCE(sat)
IC = 500mA, IB = 50mA
–
–
5
V
IE = –100mA, VCE = 10V, f = 1MHz
–
7
–
MHz
ON Characteristics
DC Current Gain
Collector–Emitter Saturation Voltage
Dynamic Characteristics
Current Gain–Bandwidth Product
fT
.295 (7.5)
.485 (12.3)
Dia
.062 (1.57)
.031 (0.78) Dia
.960 (24.3)
.360
(9.14)
Min
Base
.580 (14.7)
.147 (3.75) Dia
(2 Places)
.200
(5.08)
.145 (3.7) R Max
Collector/Case
Emitter
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