395

NTE395
Silicon PNP Transistor
Wide Band Linear Amplifier
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Power Dissipation (TA = +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 225mW
Power Dissipation (TC = +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +200°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 485°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 775°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Min
Typ
Max
Unit
VCB = 15V, IE = 0
–
–
50
nA
Collector–Base Breakdown Voltage
V(BR)CBO IC = 100µA, IE = 0
30
–
–
V
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 5mA, IB = 0
25
–
–
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 10µA, IC = 0
3
–
–
V
Collector–Base Cutoff Current
Symbol
ICBO
Test Conditions
Static Forward Current Transfer Ratio
h21E
VCE = 10V, IC = 10mA, Note 1
20
–
–
Base–Emitter Voltage
VBE
VCE = 10V, IC = 10mA
–
0.75
–
V
Knee Voltage
VCEK
IC = 20mA, Note 2
–
0.8
–
V
Transition Frequency
fT
VCE = 15V, IC = 10mA
1.4
2.3
–
GHz
Maximum Oscillation Frequency
f
VCE = 15V, IC = 10mA
–
6.5
–
GHz
VCB = 15V, IE = 0, f = 1MHz
–
1.1
–
pF
Output Capacitance
C22b
Note 1. Pulsed.
Note 2. VCEK tested with IC = 100ma and IB = values for which IC = 110mA at VCE = 1V.
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Power Gain
Test Conditions
Min
Typ
Max
Unit
VCE = 15V, IC = 10mA, f = 800MHz
–
10
–
dB
Wide Band Power Gain
GP
f = 40 to 860MHz, RS = RL = 75Ω
–
16
–
dB
Noise Figure
NF
VCE = 15V, IC = 3mA, f = 200MHz
–
2.5
–
dB
VCE = 15V, IC = 10mA, f = 800MHz
–
3.5
–
dB
VCE = 15V, IC = 10mA, f = 200MHz
–
3.0
–
dB
VCE = 15V, IC = 10mA, f = 800MHz
–
4.0
–
dB
.220 (5.58) Dia Max
.185 (4.7) Dia Max
.190
(4.82)
.030 (.762) Max
.500
(12.7)
Min
.018 (0.45)
B
E
C
45°
Case
.040 (1.02)
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