316

NTE316
Silicon NPN Transistor
High Gain, Low Noise Amp
Features:
D High Current Gain–Bandwidth Product
D Low Noise Figure
D High Power Gain
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Continuous Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.14mW/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V(BR)CEO
IC = 5mA, IB = 0
15
–
–
V
Collector–Base Breakdown Voltage
V(BR)CBO
IC = 0.1mA, IE = 0
30
–
–
V
Emitter–Base Breakdown Voltage
V(BR)EBO
IE = 0.1mA, IC = 0
3.5
–
–
V
nA
Collector Cutoff Current
ICBO
VCB = 5V, IE = 0
–
–
10
hFE
VCE = 5V, IC = 2mA
25
–
250
1400
–
–
MHz
pF
ON Characteristics
DC Current Gain
Dynamic Characteristics
Current Gain–Bandwidth Product
fT
VCE = 5V, IC = 10mA, f = 100MHz
Collector–Base Capacitance
Ccb
VCB = 10V, IE = 0, f = 1kHz
–
0.8
1.0
Small–Signal Current Gain
hfe
VCE = 5V, IC = 2mA, f = 1kHz
25
–
250
VCE = 5V, IE = 2mA, f = 31.8MHz
2
–
12
ps
NF
VCE = 5V, IC = 2mA, RS = 50Ω,
f = 450MHz
–
–
4.5
dB
Gpe
VCE = 5V, IC = 2mA, f = 450MHz
15
–
–
dB
Collector–Base Time Constant
Noise Figure
rb ’Cc
Functional Test
Common–Emitter Amplifier Power Gain
.220 (5.58) Dia
.185 (4.7) Dia
.190
(4.82)
.030 (.762)
.500
(12.7)
Min
.018 (0.45) Dia
Base
Emitter
Collector
45°
Case
.040 (1.02)
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