161

NTE161
Silicon NPN Transistor
VHF–UHF Amplifier, Mixer/Osc
Features:
D High Current Gain–Bandwidth Product: fT = 600MHz (Min) @ f = 100MHz
D Low Output Capacitance: Cob = 1.7pF (Max) @ VCB = 10V
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.14mW/°C
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.71mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ Max Unit
OFF Characteristics
Collector–Base Breakdown Voltage
V(BR)CBO IC = 1.0µA, IE = 0
30
–
–
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 10µA, IC = 0
3.0
–
–
V
Collector–Emitter Sustaining Voltage VCEO(sus) IC = 3mA, IB = 0
15
–
–
V
Collector Cutoff Current
VCB = 15V, IE = 0
–
–
0.01
µA
VCB = 15V, IE = 0, TA = +150°C
–
–
1.0
µA
ICBO
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ Max Unit
ON Characteristics
DC Current Gain
hFE
IC = 3mA, VCE = 1V
20
–
–
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 10mA, IB = 1mA
–
–
0.4
V
Base–Emitter Saturation Voltage
VBE(sat)
IC = 10mA, IB = 1mA
–
–
1.0
V
600
–
–
MHz
VCB = 10V, IE = 0, f = 140kHz
–
–
1.7
pF
VCB = 0, IE = 0, f = 140kHz
–
–
3.0
pF
Small–Signal Characteristics
Current Gain–Bandwidth Product
Output Capacitance
fT
IC = 10mA, VCE = 10V,
f = 100MHz, Note 1
Cobo
Input Capacitance
Cibo
VEB = 0.5V, IC = 0, f = 140kHz
–
–
2.0
pF
Noise Figure
NF
IC = 1mA, VCE = 6V,
RG = 400Ω, f = 60MHz
–
–
6.0
dB
Amplifier Power Gain
Gpe
VCB = 12V, IC = 6mA, f = 200MHz
15
–
–
dB
Power Output
Po
VCB = 15V, IC = 8mA, f = 500MHz
30
–
–
mW
Collector Efficiency
η
VCB = 15V, IC = 8mA, f = 500MHz
25
–
–
%
Functional Test
Note 1. fT is defined as the frequency at which |hfe| extrapolates to unity.
.220 (5.58) Dia
.185 (4.7) Dia
.190
(4.82)
.030 (.762)
.500
(12.7)
Min
.018 (0.45) Dia
Base
Emitter
Collector
45°
Case
.040 (1.02)