23

NTE23
Silicon NPN Transistor
Ultra High Frequency Amp
Description:
The NTE23 is suitable for a low noise amplifier in the VHF to UHF band.
Features:
D Low Noise Figure: NF 3.0dB Typ. @ f = 500MHz
D High Power Gain: Gpe 15dB Typ. @ f = 500MHz
D High Cutoff Frequency: fT = 2.0GHz Typ
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Power Dissipation, PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW
Junction Temperatur, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics:
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
ICBO
VCB = 15V, IE = 0
–
–
0.1
µA
Emitter Cutoff Current
IEBO
VEB = 2V, IC = 0
–
–
0.1
µA
DC Current Gain
hFE
VCE = 10V, IC = 10mA
25
80
200
–
fT
VCE = 10V, IC = 10mA
1.5
2.0
–
GHz
Gain–Bandwidth Product
Output Capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
–
0.75
1.1
pF
Maximum Available Power Gain
Gpe
VCE = 10V, IC = 10mA, f = 500MHz
13
15
–
dB
Noise Figure
NF
VCE = 10V, IC = 3mA, f = 500MHz
–
3.0
4.0
dB
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.021 (.445) Dia Max
.500
(12.7)
Min
B E C
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max
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