108

NTE108 and NTE108−1
Silicon NPN Transistor
High Frequency Amplifier
Description:
The NTE108 (TO92) and NTE108−1 (TO106) are silicon NPN transistors designed for low−noise,
high−frequency amplifiers, 1GHz local oscillatore, non−neutralized IF amplifiers, and non−saturating
circuits with rise and fall times less than 2.5ns.
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +83.3°C/W
Thermal Resistance, Junction−to−Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . +200°C/W
Note 1. RΘJA is measured with the device soldered into a typical printed circuit board.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ Max Unit
OFF Characteristics
Collector−Emitter Breakdown Voltage V(BR)CEO IC = 3mA, IB = 0, Note 2
15
−
−
V
Collector−Base Breakdown Voltage
V(BR)CBO IC = 1µA, IE = 0
30
−
−
V
Emitter−Base Breakdown Voltage
V(BR)EBO IE = 10µA, IC = 0
3
−
−
V
−
−
10
nA
Collector Cutoff Current
ICBO
VCB = 15V, IE = 0
Note 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 1%.
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ Max Unit
ON Characteristics
DC Current Gain
hFE
IC = 3mA, VCE = 1V, Note 2
20
−
−
IC = 8mA, VCE = 10V, Note 2
20
−
200
Collector−Emitter Saturation Voltage
VCE(sat)
IC = 10mA, IB = 1mA
−
−
0.4
V
Base−Emitter Saturation Voltage
VBE(sat)
IC = 10mA, IB = 1mA
−
−
1.0
V
fT
IC = 4mA, VCE = 10V,
f = 100MHz, Note 2
600
−
−
MHz
VCB = 0V, IE = 0, f = 140kHz
−
−
3.0
pF
VCB = 10V, IE = 0, f = 140kHz
−
−
1.7
pF
Small−Signal Characteristics
Current Gain−Bandwidth Product
Output Capacitance
Cobo
Input Capacitance
Cibo
VEB = 0.5V, IC = 0, f = 140kHz
−
−
2.0
pF
Noise Figure
NF
IC = 1mA, VCE = 6V,
RS = 400Ω, f = 60MHz
−
−
6
dB
Common−Emitter Amplifier Power
Gain
Gpe
IC = 6mA, VCB = 12V,
f = 200MHz (Gfd + Gre < −20dB)
15
−
−
dB
Power Output
Pout
IC = 8mA, VCB = 15V,
f = 500MHz
30
−
−
mW
IC = 8mA, VCB = 15V,
Pout = 30mW, f = 500MHz
25
−
−
%
Functional Test
η
Oscillator Collector Efficiency
Note 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 1%.
TO92
TO106
.135 (3.45) Min
.207 (5.28) Dia
.210
(5.33)
Max
.060
(1.52)
Min
Seating Plane
.180
(4.57)
.021 (.445) Dia Max
.500
(12.7)
Min
Seating
Plane
.500
(12.7)
Min
E B C
.018 (0.45)
.100 (2.54)
.100 (2.54) Dia
.050 (1.27)
B
.165
(4.2)
Max
.105 (2.67) Max
.205 (5.2) Max
E
.105 (2.67) Max
C
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