2503

NTE2503
Silicon NPN Transistor
High Gain Switch
Features:
D High DC Current Gain
D High Current Capacity
D Low Collector–Emitter Saturation Voltage
D High Emitter–Base Voltage
Applications:
D AF Amplifier
D Various Driver
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700mA
Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
ICBO
VCB = 20V, IE = 0
–
–
0.1
µA
Emitter Cutoff Current
IEBO
VEB = 10V, IC = 0
–
–
0.1
µA
DC Current Gain
hFE
IC = 50mA, VCE = 5V
800 1500 3200
IC = 500mA, VCE = 5V
600
–
–
IC = 50mA, VCE = 10V
–
270
–
MHz
VCB = 10V, f = 1MHz
–
9
–
pF
Current Gain–Bandwidth Product
Output Capacitance
fT
Cob
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Saturation Voltage
VCE(sat)
IC = 500mA, IB = 10mA
–
0.15
0.50
V
Base Saturation Voltage
VBE(sat)
IC = 500mA, IB = 10mA
–
0.9
1.2
V
Collector–Base Breakdown Voltage
V(BR)CBO IC = 10µA, IE = 0
30
–
–
V
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 1mA, RBE = ∞
25
–
–
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 10µA, IC = 0
15
–
–
V
–
0.1
–
µs
–
0.6
–
µs
–
0.06
–
µs
Turn–On Time
ton
Storage Time
tstg
Fall Time
tf
IB1 = 100mA,
IB2 = IC = 300mA,
Pulse Width = 20µs,
Duty Cycle ≤ 1%
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.021 (.445) Dia Max
.500
(12.7)
Min
E C B
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max