NTE233 Silicon NPN Transistor Video IF, Oscillator Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Total Power Dissipation (TA = +25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/°C Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Lead Temperature (During Soldering, 1/16” ±1/32” from case, 10sec), TL . . . . . . . . . . . . . . . +230°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector–Base Breakdown Voltage V(BR)CBO IC = 100µA, IE = 0 30 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 3 – – V Collector Cutoff Current ICBO VCB = 30V, IE = 0 – – 50 nA ICEO VCE = 30V, IB = 0 – – 1 µA hFE IC = 10mA, VCE = 10V, Note 1 20 – 100 VCE(sat) IC = 20mA, IB = 0.1mA, Note 1 – 0.6 – V Collector–Emitter Sustaining Voltage VCEO(sus) IC = 1mA, IB = 0, Note 1 30 – – V Current Gain–Bandwidth Product fT IC = 10mA, VCE = 10V, f = 100MHz 300 – 700 MHz Power Gain, Fixed Neutralization Gpe IC = 10mA, VCE = 10V, f = 45MHz 25 – – dB Reverse Transfer Capacitance Cre IE = 0, VCB = 10V, f ≤ 1MHz 0.6 – 1.1 pF Output Admittance, Input Short Circuit goe IC = 10mA, VCE = 10V, f = 45MHz 30 – 200 µmho DC Pulse Current Gain Collector Saturation Voltage Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 1%. .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min E B C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max