232

NTE232
Silicon PNP Transistor
Darlington Amplifier, Preamp
Description:
The NTE232 is a silicon, planar, epitaxial passivated PNP Darlington transistor in a TO92 type package designed for preamplifier input applications where high impedance is a requirement.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA
Total Power Dissipation (TA = +25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/°C
Total Power Dissipation (TC = +25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500mW
Derate above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/°C
Operating Junction Temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Lead Temperature (During Soldering, 1/16” ±1/32” from case, 10sec), TL . . . . . . . . . . . . . . . +230°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ Max Unit
Static Characteristics
Collector–Emitter Breakdown Voltage V(BR)CES IC = 100µA, IB = 0
30
–
–
V
Collector Cutoff Current
ICBO
VCB = 30V, IE = 0
–
–
100
nA
Emitter Cutoff Current
IEBO
VBE = 8V, IC = 0
–
–
100
nA
Forward Current Transfer Ratio
hFE
IC = 10mA, VCE = 5V
50k
–
–
IC = 100mA, VCE = 5V
20k
–
–
Collector–Emitter Saturation Voltage
VCE(sat) IC = 100mA, IB = 0.1mA
–
0.9
1.5
V
Base–Emitter ON Voltage
VBE(on)
–
1.45 2.00
V
IC = 100mA, VCE = 5V, Note 1
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ Max Unit
100
125
–
MHz
Dynamic Characteristics
Current Gain–Bandwidth Product
fT
IC = 30mA, VCE = 10V, f =
50MHz
Output Capacitance
Ccb
ICB = 10mA, IE = 0, f = 100MHz
–
2.5
–
pF
Noise Figure
NF
IC = 1mA, VCE = 5V, RS = 100kΩ,
f = 1kHz
–
2
–
dB
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.021 (.445) Dia Max
.500
(12.7)
Min
E B C
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max
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