69

NTE69
Silicon NPN Transistor
UHF/VHF Amplifier
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/°C
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0mW/°C
Operating Junction Temperature Tange, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W
Thermal Resistance, Junction–to–Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . 357°C/W
Note 1 RthJA is measured with the device soldered into a typical printed circuit board.
Electrical Characteristics: (TA = +25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 1mA, IB = 0, Note 2
25
–
–
V
Colletor–Base Breakdown Voltage
V(BR)CBO IC = 100µA, IE = 0
35
–
–
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 100µA, IC = 0
3
–
–
V
ON Characteristics
DC Current Gain
hFE
VCE = 4V, IC = 4mA
25
60
–
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 10mA, IB = 1mA
–
200
350
mV
Base–Emitter Saturation Voltage
VBE(sat)
IC = 10mA, IB = 1mA
–
750
950
mV
750
1100
–
MHz
Small–Signal Characteristics
Current Gain–Bandwidth Product
fT
VCE = 12V, IC = 4mA, f = 100MHz
Output Capaciatnce
Cobo
VCB = 10V, IE = 0, f = 1MHz
–
0.8
1.0
pF
Collector–Base Time Constant
rbCc
VCE = 12V, IE = 4mA, f = 31.8MHz
–
–
9.5
ps
Note 2 Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.021 (.445) Dia Max
.500
(12.7)
Min
B E C
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max