194

NTE194
Silicon NPN Transistor
Audio Power Amplifier
Description:
The NTE194 is a silicon NPN amplifier transistor packaged in a standard TO92 case.
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/°C
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W
Thermal Resistance, Junction–to–Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . 357°C/W
Note 1 RthJA is measured with the device soldered into a typical printed circuit board.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 1mA, IB = 0, Note 2
180
–
–
V
Collctor–Base Breakdown Voltage
V(BR)CBO IC = 100µA, IE = 0
180
–
–
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 10µA, IC = 0
6
–
–
V
VCB = 120V, IE = 0
–
–
50
nA
VCB = 120V, IE = 0, TA = +100°C
–
–
50
nA
VEB = 4V, IC = 0
–
–
50
nA
Collector Cutoff Current
Emitter Cutoff Current
ICBO
IEBO
Note 2 Pulse Test: Pulse Width = 300µs, Duty Cycle = 2.0%.
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
VCE = 5V, IC = 1mA
80
–
–
VCE = 5V, IC = 10mA
80
–
250
VCE = 5V, IC = 50mA
30
–
–
IC = 10mA, IB = 1mA
–
–
0.15
V
IC = 50mA, IB = 5mA
–
–
0.20
V
IC = 10mA, IB = 1mA
–
–
1.0
V
IC = 50mA, IB = 5mA
–
–
1.0
V
100
–
300
MHz
ON Characteristics (Note 2)
DC Current Gain
hFE
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
VCE(sat)
VBE(sat)
Small–Signal Characteristics
Current Gain–Bandwidth Product
fT
VCE = 10V, IC = 10mA, f = 100MHz
Output Capacitance
Cobo
VCB = 10V, IE = 0, f = 1MHz
–
–
6
pF
Input Capacitance
Cibo
VBE = 0.5V, IC = 0, f = 1MHz
–
–
20
pF
Small–Signal Current Gain
hfe
VCE = 10V, IC = 1mA, f = 1kHz
50
–
200
Noise Figure
NF
VCE = 5V, IC = 250µA, RS = 1kΩ,
f = 10Hz to 15.7kHz
–
–
8.0
Note 2 Pulse Test: Pulse Width = 300µs, Duty Cycle = 2.0%.
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.021 (.445) Dia Max
.500
(12.7)
Min
E B C
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max
dB