888M

NTE888M
Integrated Circuit
Low Power Programmable Operational Amplifier
Description:
The NTE888M is an operational amplifier in an 8–Lead DIP type package featuring low power consumption and high input impedance. In addition, the quiescent currents within this device may be
programmed by the choice of an external resistor value or current source applied to the ISET input.
This allows the NTE888M’s characteristics to be optimized for input current and power consumption
despite wide variations in operating power supply voltages.
Features:
D ±1.2V to ±18V Operation
D Wide Programming Range
D Offset Null Capability
D No Frequency Compensation Required
D Low Input Bias Currents
D Short–Circuit Protection
Maximum Ratings: (TA = +25°C unless otherwise noted)
Power Supply Voltages, VCC, VEE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±18V
Differential Input Voltage, VID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
Common–Mode Input Voltage, VICM
VCC and |VEE| < 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCC, VEE
VCC and |VEE| ≥ 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±15V
Offset Null to VEE Voltage, Voff – VEE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±0.5V
Programming Current, Iset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500µA
Programming Voltage, VSET
Voltage from ISET terminal to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (VCC –2V) to VCC
Output Short–Circuit Duration (Note 1), ts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Indefinite
Operating Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0° to +70°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C
Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Note 1. May be to GND or either Supply Voltage. Rating applies up to a case temperature of +125°C
or ambient temperature of +70°C and ISET ≤ 30µA.
Electrical Characteristics: (VCC = +15V, VEE = –15V, ISET = 15µA, TA = +25°C unless other–
wise specified)
Parameter
Input Offset Voltage
Symbol
Min
Typ
Max
Unit
–
2
6
mV
–
–
7.5
mV
VIOR
–
18
–
mV
IIO
–
2
25
nA
TA = +70°C
–
–
25
nA
TA = 0°C
–
–
40
nA
–
15
50
nA
TA = +70°C
–
–
50
nA
TA = 0°C
–
–
100
nA
VIO
Test Conditions
RS ≤ 10kΩ
0° ≤ TA ≤ +70°C
Offset Voltage Adjustment Range
Input Offset Current
Input Bias Current
IIB
Input Resistance
ri
–
5
–
MΩ
Input Capacitance
ci
–
2
–
pF
0° ≤ TA ≤ +70°C
±10
–
–
V
RL ≥ 5kΩ, VO = ±10V
50k
400k
–
V/V
RL ≥ 75kΩ, VO = ±10V,
0° ≤ TA ≤ +70°C
50k
–
–
V/V
RL ≥ 5kΩ
±10
±13
–
V
RL ≥ 75kΩ, 0° ≤ TA ≤ +70°C
±10
–
–
V
Input Voltage Range
Large Signal Voltage Gain
Output Voltage Swing
VID
AVOL
VO
Output Resistance
ro
–
1
–
kΩ
Output Short–Circuit Current
Ios
–
12
–
mA
Common–Mode Rejection Ratio
CMRR
RL ≤ 10kΩ, 0° ≤ TA ≤ +70°C
70
90
–
dB
Supply Voltage Rejection Ratio
PSRR
RL ≤ 10kΩ, 0° ≤ TA ≤ +70°C
–
25
200
µV/V
Supply Current
ICC, IEE
–
160
190
µA
–
–
200
µA
5.7
mW
0° ≤ TA ≤ +70°C
Power Dissipation
Transient Response (Unity Gain)
Rise Time
Overshoot
Slew Rate
PD
tTLH
–
0° ≤ TA ≤ +70°C
–
–
6.0
mW
Vin = 20mV, RL ≥ 5kΩ, CL = 100pF
–
0.35
–
µs
–
10
–
%
–
0.8
–
V/µs
OS
SR
RL ≥ 5kΩ
Pin Connection Diagram
Offset Null 1 1
8 ISET
Inverting Input 2
7 VCC (+)
Non–Inverting Input 3
6 Output
VCC (–) 4
8
5 Offset Null 2
5
.260 (6.6)
1
4
.300
(7.62)
.390 (9.9)
Max
.155
(3.93)
.100 (2.54)
.145 (3.68)
.300 (7.62)
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