917

NTE917
Integrated Circuit
Dual, Independent Transistor Array, Differential Amp
Description:
The NTE917 is an integrated circuit consisting of two independent differential amplifiers with associated
constant−current transistors on a common monolithic substrate. The six NPN transistors which comprise
the amplifiers are general purpose devices which exhibit low 1/f noise an a value of fT in excess of
300MHz. These features make the NTE917 useful from DC to 120MHz. Bias and load resistors have
been omitted to provide maximum application flexibility.
The monolithic construction of the NTE917 provides close electrical and thermal matching of the
amplifiers. This feature makes this device particularly useful in dual−channel applications where
matched performance of the two channels is required.
The NTE917 is supplied in a 14−Lead DIP type plastic package with a limited temperature range. The
availability of extra pins allows the introduction of an independent substrate connection for maximum
flexibility.
Features:
D Two Different Amplifiers on a Common Substrate
D Independently Accessible Inputs and Outputs
D Maximum Input Offset Voltage: ±5mV
D Limited Temperature Range: −0° to +85°C
Applications:
D Dual Sense Amplifiers
D Dual Schmitt Triggers
D Multifunction Combinations − RF/Mixer/Oscillator; Converter/IF
D IF Amplifiers (Differential and/or Cascode)
D Product Detectors
D Doubly Balanced Modulators and Demodulators
D Balanced Quadrature Detectors
D Cascade Limiters
D Synchronous Detectors
D Pairs of Balanced Mixers
D Synthesizer Mixers
D Balanced (Push−Pull) Cascode Amplifiers
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Power Dissipation, PD
Any One Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Total Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW
Derat Above +55°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.67mW/°C
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +85°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +150°C
Lead Temperature (During Soldering, 1/16” ±1/32” from case, 10sec max), TL . . . . . . . . . . . +265°C
The following ratings apply for each transistor in the device:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector−Substrate Voltage (Note 1), VCIO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Note 1. The collector of each transistor is isolated from the substrate by an integral diode. The substrate
must be connected to a voltage which is more negative than any collector voltage in order to
maintain isolation between transistors and provide for normal transistor action. The substrate
should be maintained at signal (AC) GND by means of a suitable grounding capacitor, to avoid
undesired coupling between transistors.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
−
0.45
5.0
mV
−
0.3
2.0
µA
−
10
24
µA
Static Characteristics
For Each Differential Amplifier
Input Offset Voltage
VIO
Input Offset Current
IIO
Input Bias Current
Quiescent Operating Current Ratio
VCB = 3V,
IE(Q3) = IE(Q4) = 2mA
II
IC(Q1)
IC(Q2)
or
Temperature Coefficient Magnitude
of Input Offset Voltage
∆VIO
∆T
For Each Transistor
DC Forward Base−Emitter Voltage
VBE
IC(Q5)
IC(Q6)
0.98 to 1.02 (Typ)
−
1.1
−
µV/°C
VCB = 3V IC = 50µA
−
0.630
0.70
V
IC = 1mA
−
0.715
0.80
V
IC = 3mA
−
0.750
0.85
V
IC = 10mA
−
0.800
0.90
V
Temperature Coefficient of
Base−Emitter Voltage
∆VBE
∆T
VCB = 3V, IC = 1mA
−
−1.9
−
µV/°C
Collector Cutoff Current
ICBO
VCB = 10V, IE = 0
−
0.002
100
nA
Collector−Emitter Breakdown Voltage
V(BR)CEO
IC = 1mA, IB = 0
15
24
−
V
Collector−Base Breakdown Voltage
V(BR)CBO
IC = 10µA, IE = 0
20
60
−
V
Collector−Substrate Breakdown Voltage
V(BR)CIO
IC = 10µA, ICI = 0
20
60
−
V
Emitter−Base Breakdown Voltage
V(BR)EBO
IE = 10µA, IC = 0
5
7
−
V
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
−
100
−
dB
AGC
−
75
−
dB
A
−
32
−
dB
AGC
−
105
−
dB
A
−
60
−
dB
−
110
−
−
3.5
−
kΩ
15.6
−
µmho
Dynamic Characteristics
Common−Mode Rejection Ratio
for Each Amplifier
AGC Range, One Stage
Voltage Gain, Single Stage
Double−Ended Output
AGC Range, Two Stage
Voltage Gain, Two Stage
Double−Ended Output
CMRR
VCC = 12V, VEE = −6V,
Vx = −3.3V, f = 1kHz
Low−Frequency, Small−Signal
Equivalent−Circuit Characteristics
(For Single Transistor)
Forward Current−Transfer Ratio
hfe
Short−Circuit Input Impedance
hie
Open−Circuit Output Impedance
hoe
−
Open−Circuit Reverse Voltage
Transfer Ratio
hre
1.8 x 10−4 (Typ)
1/f Noise Figure (For Single Transistor)
NF
f = 1kHz, VCE = 3V
−
3.25
−
dB
Gain−Bandwidth Product
(For Single Transistor)
fT
VCE = 3V, IC = 3mA
−
550
−
MHz
f = 1kHz, VCE = 3V,
IC = 1mA
Admittance Characteristics;
Differential Circuit Configuration:
(For Each Amplifier)
Forward Transfer Admittance
y21
−20+j0 (Typ)
mmho
Input Admittance
y11
0.22+j0.1 (Typ)
mmho
Output Admittance
y22
0.01+j0 (Typ)
mmho
Reverse Transfer Admittance
y12
−0.003+j0 (Typ)
mmho
68−j0 (Typ)
mmho
0.55+j0 (Typ)
mmho
VCB = 3V Each Collector
IC ≈ 1.25mA,
1 25mA f = 1MHz
Admittance Characteristics;
Cascode Circuit Configuration:
(For Each Amplifier)
Forward Transfer Admittance
y21
Input Admittance
y11
Output Admittance
y22
0+j0.02 (Typ)
mmho
Reverse Transfer Admittance
y12
0.004−j0.005 (Typ)
µmho
Noise Figure
NF
VCB = 3V Total Stage
IC ≈ 2.5mA,
2 5mA f = 1MHz
f = 100MHz
−
8
−
dB
Pin Connection Diagram
Collector Q2 1
14 Collector Q1
Base Q2 2
Base Q3 3
13 Base Q1
12 Emitter Q4
Emitter Q3 4
11 Base Q4
Substrate 5
10 N.C.
Base Q5 6
9 Base Q6
Collector Q5 7
8 Collector Q6
14
8
1
7
.300 (7.62)
.785 (19.95) Max
.200
(5.08)
Max
.100 (2.45)
.600 (15.24)
.099 (2.5) Min
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