NTE917 Integrated Circuit Dual, Independent Transistor Array, Differential Amp Description: The NTE917 is an integrated circuit consisting of two independent differential amplifiers with associated constant−current transistors on a common monolithic substrate. The six NPN transistors which comprise the amplifiers are general purpose devices which exhibit low 1/f noise an a value of fT in excess of 300MHz. These features make the NTE917 useful from DC to 120MHz. Bias and load resistors have been omitted to provide maximum application flexibility. The monolithic construction of the NTE917 provides close electrical and thermal matching of the amplifiers. This feature makes this device particularly useful in dual−channel applications where matched performance of the two channels is required. The NTE917 is supplied in a 14−Lead DIP type plastic package with a limited temperature range. The availability of extra pins allows the introduction of an independent substrate connection for maximum flexibility. Features: D Two Different Amplifiers on a Common Substrate D Independently Accessible Inputs and Outputs D Maximum Input Offset Voltage: ±5mV D Limited Temperature Range: −0° to +85°C Applications: D Dual Sense Amplifiers D Dual Schmitt Triggers D Multifunction Combinations − RF/Mixer/Oscillator; Converter/IF D IF Amplifiers (Differential and/or Cascode) D Product Detectors D Doubly Balanced Modulators and Demodulators D Balanced Quadrature Detectors D Cascade Limiters D Synchronous Detectors D Pairs of Balanced Mixers D Synthesizer Mixers D Balanced (Push−Pull) Cascode Amplifiers Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Power Dissipation, PD Any One Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Total Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW Derat Above +55°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.67mW/°C Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +85°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +150°C Lead Temperature (During Soldering, 1/16” ±1/32” from case, 10sec max), TL . . . . . . . . . . . +265°C The following ratings apply for each transistor in the device: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Collector−Substrate Voltage (Note 1), VCIO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Note 1. The collector of each transistor is isolated from the substrate by an integral diode. The substrate must be connected to a voltage which is more negative than any collector voltage in order to maintain isolation between transistors and provide for normal transistor action. The substrate should be maintained at signal (AC) GND by means of a suitable grounding capacitor, to avoid undesired coupling between transistors. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit − 0.45 5.0 mV − 0.3 2.0 µA − 10 24 µA Static Characteristics For Each Differential Amplifier Input Offset Voltage VIO Input Offset Current IIO Input Bias Current Quiescent Operating Current Ratio VCB = 3V, IE(Q3) = IE(Q4) = 2mA II IC(Q1) IC(Q2) or Temperature Coefficient Magnitude of Input Offset Voltage ∆VIO ∆T For Each Transistor DC Forward Base−Emitter Voltage VBE IC(Q5) IC(Q6) 0.98 to 1.02 (Typ) − 1.1 − µV/°C VCB = 3V IC = 50µA − 0.630 0.70 V IC = 1mA − 0.715 0.80 V IC = 3mA − 0.750 0.85 V IC = 10mA − 0.800 0.90 V Temperature Coefficient of Base−Emitter Voltage ∆VBE ∆T VCB = 3V, IC = 1mA − −1.9 − µV/°C Collector Cutoff Current ICBO VCB = 10V, IE = 0 − 0.002 100 nA Collector−Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0 15 24 − V Collector−Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 20 60 − V Collector−Substrate Breakdown Voltage V(BR)CIO IC = 10µA, ICI = 0 20 60 − V Emitter−Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 5 7 − V Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit − 100 − dB AGC − 75 − dB A − 32 − dB AGC − 105 − dB A − 60 − dB − 110 − − 3.5 − kΩ 15.6 − µmho Dynamic Characteristics Common−Mode Rejection Ratio for Each Amplifier AGC Range, One Stage Voltage Gain, Single Stage Double−Ended Output AGC Range, Two Stage Voltage Gain, Two Stage Double−Ended Output CMRR VCC = 12V, VEE = −6V, Vx = −3.3V, f = 1kHz Low−Frequency, Small−Signal Equivalent−Circuit Characteristics (For Single Transistor) Forward Current−Transfer Ratio hfe Short−Circuit Input Impedance hie Open−Circuit Output Impedance hoe − Open−Circuit Reverse Voltage Transfer Ratio hre 1.8 x 10−4 (Typ) 1/f Noise Figure (For Single Transistor) NF f = 1kHz, VCE = 3V − 3.25 − dB Gain−Bandwidth Product (For Single Transistor) fT VCE = 3V, IC = 3mA − 550 − MHz f = 1kHz, VCE = 3V, IC = 1mA Admittance Characteristics; Differential Circuit Configuration: (For Each Amplifier) Forward Transfer Admittance y21 −20+j0 (Typ) mmho Input Admittance y11 0.22+j0.1 (Typ) mmho Output Admittance y22 0.01+j0 (Typ) mmho Reverse Transfer Admittance y12 −0.003+j0 (Typ) mmho 68−j0 (Typ) mmho 0.55+j0 (Typ) mmho VCB = 3V Each Collector IC ≈ 1.25mA, 1 25mA f = 1MHz Admittance Characteristics; Cascode Circuit Configuration: (For Each Amplifier) Forward Transfer Admittance y21 Input Admittance y11 Output Admittance y22 0+j0.02 (Typ) mmho Reverse Transfer Admittance y12 0.004−j0.005 (Typ) µmho Noise Figure NF VCB = 3V Total Stage IC ≈ 2.5mA, 2 5mA f = 1MHz f = 100MHz − 8 − dB Pin Connection Diagram Collector Q2 1 14 Collector Q1 Base Q2 2 Base Q3 3 13 Base Q1 12 Emitter Q4 Emitter Q3 4 11 Base Q4 Substrate 5 10 N.C. Base Q5 6 9 Base Q6 Collector Q5 7 8 Collector Q6 14 8 1 7 .300 (7.62) .785 (19.95) Max .200 (5.08) Max .100 (2.45) .600 (15.24) .099 (2.5) Min