784

NTE784
Integrated Circuit
Wide–Band Power Amplifier
Description:
The NTE784 is a multistage, multipurpose, wide–band power amplifier on a single monolithic silicon
chip. This device employs a highly versitile and stable direct–coupled circuit configuration featuring
wide frequency range, high voltage and power gain, and high power output. These features plus inherent stability over a wide temperature range make the NTE784 extremely useful for a wide variety
of applications in military, industrial, and commercial equipment.
The NTE784 is particularly suited for service as a class B power amplifier and can provide a maximum
power output of 1W from a 12V DC supply with a typical power gain of 75dB.
Features:
D High Power Output
D Wide Frequency Range
D High Power Gain
D Single Power Supply for Class B Operation with Transformer
D Built–In Temperature Tracking Voltage Regulator Provides Stable Operation
Applications:
D AF Power Amplifiers for Portable and Fixed Sound and Communications Systems
D Servo–Control Amplifier
D Wide–Band Linear Mixers
D Video Power Amplifiers
D Transmission–Line Driver Amplifier (Balanced and Unbalanced)
D Fan–In and Fan–Out Amplifiers for Computer Logic Circuits
D Lamp–Control Amplifiers
D Motor–Control Amplifiers
D Power Multivibrators
D Power Switches
Absolute Maximum Ratings:
Power Dissipation (Without Heatsink, TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.7mW/°C
Power Dissipation (With Heatsink, TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Derate Above 55°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16.7mW/°C
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Maximum Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Collector–Emitter Breakdown Voltage
V(BR)CER
V(BR)CEO
Test Conditions
Min
Typ
Max
Unit
(Q6 & Q7) IC = 10mA
25
–
–
V
(Q1) IC = 0.1mA
10
–
–
V
Idle Currents
I4, I7
(Q6 & Q7) VCC1 =9V, VCC2 = 2V
–
5.5
–
mA
Peak Output Currents
I4, I7
(Q6 & Q7) VCC1 =9V, VCC2 = 2V
180
–
–
mA
Cutoff Currents
I4, I7
(Q6 & Q7) VCC1 =9V, VCC2 = 2V
–
–
1.0
mA
Differential Amplifier Current Drain
ICC1
VCC1 = 9V, VCC2 = 9V
6.3
9.4
12.5
mA
Total Current Drain
ICC1 +
ICC2
VCC1 = 9V, VCC2 = 9V
14.5
21.5
30.0
mA
Differential Amplifier Input Pin Voltages
V2, V3
VCC1 = 9V, VCC2 = 2V
–
11.1
–
V
Regulator Pin Voltage
V11
VCC1 = 9V, VCC2 = 2V
–
2.35
–
V
Collector–Emitter Cutoff Current
ICEO
(Q) VCC1 = 10V
–
–
100
µA
Emitter–Base Cutoff Current
IEBO
(Q) VCC1 = 3V
–
–
0.1
µA
Collector–Base Cutoff Current
ICBO
(Q) VCC1 = 3V
–
–
0.1
µA
Forward Current Transfer Ratio
hFE1
(Q1) IC = 3mA, VCC1 = 6V
30
75
–
Bandwidth
BW
VCC1 = 6V, VCC2 = 6V, –3dB
–
8
–
MHz
VCC1 = 6V, VCC2 = 6V, RCC = 130Ω
200
300
–
mW
VCC1 = 9V, VCC2 = 9V, RCC = 130Ω
400
550
–
mW
VCC1 = 9V, VCC2 = 12V, RCC = 200Ω
800
1000
–
mW
Maximum Power Output
PO(max)
Sensitivity
eIN
VCC1 = 9V, VCC2 = 12V,
POUT = 800mW, RCC = 200Ω
–
50
100
mV
Input Resistance
RIN3
VCC1 = 6V, VCC2 = 6V, Pin3 to GND
–
1000
–
Ω
Pin Connection Diagram
(Top View)
Optional Bias Short to VCC
8
VCC 9
6 Emitter Output Q2
Buffer Amp Input 10
2.1V Bias Point 11
GND
5 Emitter Output Q1
4 Collector Output Q
1
12
Buffer Amp Output
67 Collector Output Q2
1
3 Differential Amp Input “A”
12
Differential Amp Input “B”
.370 (9.4) Dia Max
.335 (8.5) Dia Max
.180
(4.57)
Max
.500
(12.7)
Min
.018 (0.48) Dia Typ
.245 (6.23) Dia
4
3
5
2
6
7
1
8
12
11
10
9
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