SIRECTIFIER SBL1035

SBL1030 thru SBL1045
Low VF Schottky Barrier Rectifiers
Dimensions TO-220AC
A
C
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
A
C
C(TAB)
A=Anode, C=Cathode, TAB=Cathode
SBL1030
SBL1035
SBL1040
SBL1045
Symbol
VRRM
V
30
35
40
45
VRMS
V
21
24.5
28
31.5
Dim.
VDC
V
30
35
40
45
Characteristics
Inches
Min.
Max.
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
2.300 0.420
0.100 0.135
0.045 0.070
0.250
0.025 0.035
0.190 0.210
0.140 0.190
0.015 0.022
0.080 0.115
0.025 0.055
Milimeter
Min.
Max.
12.70 14.73
14.23 16.51
9.66 10.66
3.54
4.08
5.85
6.85
2.54
3.42
1.15
1.77
6.35
0.64
0.89
4.83
5.33
3.56
4.82
0.38
0.56
2.04
2.49
0.64
1.39
Maximum Ratings
Unit
I(AV)
Maximum Average Forward Rectified Current
@TC=95oC
10
A
IFSM
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
250
A
Maximum Forward Voltage At 10.0A DC (Note 1)
0.60
V
1
50
mA
VF
IR
Maximum DC Reverse Current
At Rated DC Blocking Voltage
CJ
Typical Junction Capacitance (Note 2)
ROJC
TJ
TSTG
o
@TJ=25 C
@TJ=100oC
550
Typical Thermal Resistance (Note 3)
2.5
Operating Temperature Range
Storage Temperature Range
pF
o
C/W
-55 to +125
o
-55 to +150
o
NOTES: 1. 300us Pulse Width, 2% Duty Cycle.
2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
3. Thermal Resistance Junction To Case.
FEATURES
MECHANICAL DATA
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
* Case: TO-220AC molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
C
C
SBL1030 thru SBL1045
Low VF Schottky Barrier Rectifiers
8
6
4
RESISTIVE OR
INDUCTIVE LOAD
2
0
25
50
75
100
125
150
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD CURRENT
AMPERES
FIG.1 - FORWARD CURRENT DERATING CURVE
10
175
300
250
200
150
100
50
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
0
1
2
5
CASE TEMPERATURE , C
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
20
50
100
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
1000
INSTANTANEOUS FORWARD CURRENT ,(A)
100
100
TJ = 100 C
10
TJ = 75 C
1.0
TJ = 25 C
0.1
0.01
10
1.0
TJ = 25 C
PULSE WIDTH 300us
300ua
2% Duty cycle
0.1
0
20
40
60
80
100
140
120
0.1
0.2
0.3
0.4
FIG.5 - TYPICAL JUNCTION CAPACITANCE
10000
1000
TJ = 25 C, f= 1MHz
100
0.1
1
0.5
0.6
0.7
0.8
0.9
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
CAPACITANCE , (pF)
INSTANTANEOUS REVERSE CURRENT ,(mA)
10
NUMBER OF CYCLES AT 60Hz
4
10
REVERSE VOLTAGE , VOLTS
100
1.0