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WFU5N65L Product Description
Silicon N-Channel MOSFET
Features
D
�
5.0A,650V,RDS(on)(Max2.7Ω)@VGS=10V
�
Ultra-low Gate charge(Typical 12nC)
�
Fast Switching Capability
�
100%Avalanche Tested
�
Maximum Junction Temperature Range(150℃)
G
S
General Description
This Power
MOSFET is produced using Winsemi's advanced
planar stripe,VDMOS technology.this latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics .This devices is specially well
suited for half bridge and full bridge resonant topology line a
electronic lamp ballast, high efficiency switched mode power
supplies, active power factor correction.
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
650
V
Continuous Drain Current(@Tc=25℃)
5
A
Continuous Drain Current(@Tc=100℃)
2.8
A
16
A
±30
V
Drain Source Voltage
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note2)
202
mJ
EAR
Repetitive Avalanche Energy
(Note1)
14
mJ
77
W
0.62
W/℃
-55~150
℃
300
℃
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ,Tstg
TL
Junction and Storage Temperature
Channel Temperature
Thermal Characteristics
Value
Symbol
Parameter
Min
Typ
Max
Units
RQJC
Thermal Resistance , Junction -to -Case
-
-
1.62
℃/W
RQJA
Thermal Resistance , Junction-to -Ambient
-
-
110
℃/W
WT-F080-Rev.A0 Aug 2014
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MICROELECTRONICS
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MICROELECTRONICS
[email protected] Microelectronics Co., Ltd., All right reserved.
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WFU5N65L Product Description
Silicon N-Channel MOSFET
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Gate leakage current
Gate-source breakdown voltage
Drain Cut -off current
Test Condition
Min
Type
Max
Unit
IGSS
VGS=±30V,VDS=0V
-
-
±100
nA
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
VDS=650V,VGS=0V
-
-
1.0
µA
VDS=500V,Tc=125℃
-
-
100
µA
-
0.65
-
V/℃
IDSS
△BVDSS/△TJ
ID=250 µA,Referenced to 25℃
Breakdown voltage Temperature coefficient
V(BR)DSS
ID=250 µA,VGS=0V
650
-
-
V
Gate threshold voltage
VGS(th)
VDS=VGS,ID=250 µA
2
-
4
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=2.0A
-
2.3
2.7
Ω
Drain -source breakdown voltage
Input capacitance
Ciss
VDS=25V,
-
512
-
Reverse transfer capacitance
Crss
VGS=0V,
-
2.5
-
Output capacitance
Coss
f=1MHz
-
56
-
VDD=325V,
-
27
-
Turn-on Rise time
tr
Turn-on delay time
Td(on)
ID=5.0A
-
14
-
tf
RG=25Ω
-
28
-
-
34
-
-
12
-
-
3.2
-
-
5.0
-
Switching time
pF
ns
Turn-off Fall time
(Note3,4)
Td(off)
Turn-off delay time
Total gate charge(gate-source
VDD=480V,
Qg
plus gate-drain)
VGS=10V,
nC
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
ID=5.0A
(Note3,4)
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Continuous drain reverse current
IDR
-
-
-
5
A
Pulse drain reverse current
IDRP
-
-
-
16
A
Forward voltage(diode)
VDSF
IDR=5.0A,VGS=0V
-
-
1.4
V
Reverse recovery time
trr
IDR=5.0A,VGS=0V,
-
431
-
ns
Reverse recovery charge
Qrr
dIDR /dt =100 A /µs
-
2.1
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=30mH IAS=3.36A,VDD=100V,RG=25Ω,Starting TJ=25℃
3.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
4. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
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WFU5N65L Product Description
Silicon N-Channel MOSFET
10
To p
100
VG S
4 .5 V
10
ID [A ]
I D [A]
5 .0 V
5 .5 V
6 .0 V
7 .0 V
8 .0 V
10V
15V
1
-5 5 ° C
2 5 °C
1 5 0 °C
1
No te s:
1 .2 5 0 µs p u lse te st
2 .VD S =5 0 V
Notes:
1.250µs pulse test
2.Tc = 25°C
0 .1
0 .1
1
100
10
0
1
2
3
4
6
5
7
8
9
10
VG S [V]
VD S [V]
Fig.2 Transfer Characteristics
Fig.1 On Region Characteristics
100
4 .0
3 .5
V GS =10V
10
V G S =20V
2 .5
I DR [A]
R DS(ON)[ Ω]
3 .0
2 .0
1 5 0 °C
-5 5 ° C
2 5 °C
1
1 .5
Notes:
1.250µs pulse test
2.VG S =0V
1 .0
Note:TJ =25°C
0 .5
0 .1
0
2
8
6
4
0
0 .2
0 .4
0 .6
I D [A ]
1 .0
1 .2
1 .4
VS D [V]
Fig.3 On-Resistance Variation vs Drain
Current and Gate Voltage
Fig.4 Body Diode Forward Voltage Variation vs.
Source Current and Temperature
12
1000
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
C rss=C gd
900
800
10
520V
C o ss
325V
700
8
VGS (V)
pF
0 .8
600
C is s
500
130V
6
400
4
300
Note:
1.VG S =0V
2.f=1MHz
C rs s
200
2
100
Note:I D=5.0A
0
0 .1
0
10
1
0
100
2
VD S [V]
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6
10
12
14
Qg(nC)
Fig.6 Gate Charge Characteristics
Fig.5 Capacitance Characteristics
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WFU5N65L Product Description
Silicon N-Channel MOSFET
1 .2
3 .0
2 .5
R DS( ON)
BVDSS
1 .1
1 .0
2 .0
1 .5
1 .0
0 .9
Note:
1.VG S =0V
2.ID =250uA
0 .8
-1 0 0
Note:
1.VG S =10V
2.ID =2.5A
0 .5
0 .0
-5 0
50
0
100
150
200
-1 0 0
-5 0
50
0
T J (° C )
150
200
T J (° C )
Fig.7 Breakdown Voltage Variation
vs. Temperature
10
100
Fig.8 On-Resistance Variation
vs. Temperature
2
6
O p e ra ti o n i n T h i s A re a
i s L i m i te d b y RDS(ON)
5
10
100µs
1m s
1
4
10
I D [A]
I D [A]
10m s
D C
0
3
2
10
-1
No te s:
1
1 . Tc=2 5 °C
2 . TJ=150°C
3.Single pulse
10
-2
10
0
10
1
10
2
10
0
3
25
50
100
75
125
V D S [V]
Tc(° C )
Fig.9 Maximum Safe Operation Area
Fig.10 Maximum Drain Current
vs Case temperature
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WFU5N65L Product Description
Silicon N-Channel MOSFET
50K Ω
12V
VG S
Same type
as D U T
Qg
200nF
10V
300nF
VD S
VG S
Qg s
Qg d
DUT
3m A
Ch a rg e
Fig.11 Gate Test circuit & Waveform
VD S
RG
RL
VD S
90%
VD D
VG S
VG S
DUT
10V
10%
td(on)
tr
td(off)
to n
tf
to f f
Fig.12 Resistive Switching Test Circuit & Waveform
L
EA S =
VD S
B V DSS
B V D S S - VD D
B V DSS
IA S
ID
RG
VD D
DUT
10V
1
L IA S 2
2
I D( t)
VD S( t )
VD D
tp
tp
Tim e
Fig.13 Unclamped Inductive Switching Test Circuit & Waveform
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WFU5N65L Product Description
Silicon N-Channel MOSFET
DUT
VD S
IS D
L
Driver
RG
S am e Type
as DUT
VG S
VD D
dv/dt controlled by RG
IS D conteolled by pulse period
VG S
D =
(Driver)
Gate Pulse Width
Gate Pulse Period
10V
IF M ,Body Diode Forward Current
IS D
di/dt
(DUT)
IR M
Body Diode Reverse Current
VD S
(DUT)
Body Diode Recovery dv/dt
VD D
VS D
Body Diode
Forward Voltage Drop
Fig.14 Peak Diode Recovery dv/dt Test Circuit & Waveform
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WFU5N65L Product Description
Silicon N-Channel MOSFET
TO-251 Package Dimension
0.852±0.15
2.3±0.20
6.6±0.20
0.508±0.05
6.10±0.20
5.32±0.20
5.0±0.30
3-0.80±0.20
3-0.76±0.10
Smooth
1.00±0.10
Matt
0.508±0.05
2.286
2.286
Note:
1.plastic body is not marked as smooth Ra=0.1 ;
matt Ra=0.8
2.unmarked tolerance ± 0.15 , unlabeled corner
Rmax=0.25
3.plastic body without defect ,shrinkage , cracks,
bubbles and other defects
4.units dimension mm
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WFU5N65L Product Description
Silicon N-Channel MOSFET
NOTE:
1.We strongly recommend customers check carefully on the trademark when buying our product, if there is any
question, please don't be hesitate to contact us.
2.Please do not exceed the absolute maximum ratings of the device when circuit designing.
3.Winsemi Microelectronics Co., Ltd reserved the right to make changes in this specification sheet and is
subject to change without prior notice.
CONTACT:
Winsemi Microelectronics Co., Ltd.
ADD:Room 1002, East, Phase 2, HighTech Plaza,Tian-An Cyber Park,Che gong miao, FuTian, Shenzhen, P.R.
China.
Post Code : 518040
Tel : +86-755-8250 6288
FAX : +86-755-8250 6299
Web Site : www.winsemi.com
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