WFF13N50 Product Description
Silicon N-Channel MOSFET
D
Features
�
13A,500V, RDS(on)(Max0.46Ω)@VGS=10V
�
Ultra-low Gate charge(Typical 37nC)
�
Fast Switching Capability
�
100%Avalanche Tested
�
Maximum Junction Temperature Range(150℃)
G
S
General Description
This Power MOSFET is produced using Winsemi's advancedplanar
stripe,DMOS technology.This latest technology has beenespecially
designed to minimize on-state resistance, have a high rugged avalanche
characteristics .This devices is specially wellsuited for high efficiency
switch model power supplies, power factor correction and half bridge and
full bridge resonant topology line a electronic lamp ballast.
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
Drain Source Voltage
500
V
Continuous Drain Current(@Tc=25℃)
13*
A
Continuous Drain Current(@Tc=100℃)
8*
A
52*
A
±30
V
(Note2)
845
mJ
（note 1）
13
A
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
(Note1)
5
mJ
dv/dt
Peak Diode Recovery dv /dt
(Note3)
4.5
V/ ns
Total Power Dissipation(@Tc=25℃)
50
W
Derating Factor above 25℃
0.4
W/℃
-55~150
℃
300
℃
PD
TJ,Tstg
TL
Junction and Storage Temperature
Channel Temperature
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Value
Parameter
Min
Typ
Max
Units
RQJC
Thermal Resistance , Junction -to -Case
-
-
2.5
℃/W
RQJA
Thermal Resistance , Junction-to -Ambient
-
-
62.5
℃/W
WT-F059-Rev.A1 Jan.2014
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WFF13N50 Product Description
Silicon N-Channel MOSFET
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Gate leakage current
Gate-source breakdown voltage
Drain cut -off current
Test Condition
Min
Type
Max
Unit
IGSS
VGS=±30V,VDS=0V
-
-
±100
nA
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
VDS=500V,V GS=0V
-
-
1
µA
10
µA
IDSS
VDS=400V,TC=125℃
Drain -source breakdown voltage
V(BR)DSS
ID=250 µA,VGS=0V
500
-
-
V
ID=250µA,Referenced to 25℃
-
0.6
-
V/℃
Breakdown voltage Temperature
△BVDSS/△TJ
Coefficient
Gate threshold voltage
VGS(th)
VDS=10V,ID=250 µA
3
-
4.5
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=6.5A
-
0.37
0.46
Ω
Forward Transconductance
gfs
VDS=40V,ID=6.5A
-
15
-
S
Input capacitance
Ciss
VDS=25V,
-
1560
2090
Reverse transfer capacitance
Crss
VGS=0V,
-
25
30
Output capacitance
Coss
f=1MHz
-
210
260
VDD=250V,
-
160
270
td(on)
ID=13A
-
90
180
tf
RG=25Ω
-
60
140
-
150
260
-
37
50
-
10.9
-
-
17.2
-
Turn-On rise time
tr
Turn-On delay time
Switching time
pF
ns
Turn-Off Fall time
Turn-Off delay time
(Note4,5)
td(off)
Total gate charge(gate-source
VDD=400V,
Qg
plus gate-drain)
VGS=10V,
nC
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
ID=13A
(Note4,5)
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Continuous drain reverse current
IDR
-
-
-
13
A
Pulse drain reverse current
IDRP
-
-
-
52
A
Forward voltage(diode)
VDSF
IDR=13A,VGS=0V
-
-
1.4
V
Reverse recovery time
trr
IDR=13A,VGS=0V,
-
410
-
ns
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
4.5
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=9.0mH IAS=13A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤13A,di/dt≤200A/us,VDD<BVDSS,Starting TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
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WFF13N50 Product Description
Silicon N-Channel MOSFET
Vgs
1 5 .0 V
1 0 .0 V
9 .0 V
8 .0 V
7 .0 V
6 .5 V
Buttom: 5 . 5 V
101
10
Note:
1.250us pulse test
。
2.Tc=25 C
。
25 C
I D Drain Current[A]
I D Drain Current[A]
To p :
。
150 C
1
0 .1
100
100
Note:
1.250us pulse test
2.VD S =40V
2
101
4
6
8
10
VD S Drain-Source Voltage[V]
VG S Gate-Source Voltage[V]
Fig.1 On Region Characteristics
Fig.2 Transfer Characteristics
10
VG S =10V
0 .4
I DR Rev ers e D rain Cu rre nt[A ]
R D S (o n)
Drain-S o urce O n R es istanc e[Ω ]
0 .6
VG S =20V
0 .2
0
5
10
20
15
1
150 。
C
25 。C
0 .1
0 .2
0 .3
0 .4
0 .5
0 .6
0 .7
0 .8
0 .9
1 .0
1 .1
1 .2
1 .3
1 .4
ID Drain Current[A]
VS D Source-Drain Voltage[V]
Fig.3 On-Resistance Variation vs Drain
Current and Gate Voltage
Fig.4 Body Diode Forward Voltage Variation vs.
Source Current and Temperature
12
3000
Ciss=Cgs+Cgd(Cds=shorted)
VD S =100V
Cos s =Cds +Cgd
Crs s =Cgd
10
2500
VD S =250V
VD S =400V
C o ss
1500
Note:
1.V G S =0V
2.f=1M Hz
1000
C rs s
V GS Gate Source Voltage[V]
Capacitance[pF]
C iss
2000
8
6
4
2
500
0
0
1 0 -1
100
101
0
10
20
Qg Toltal Gate Charge[nC]
30
40
VD S Drain-Source Voltae[V]
Fig.5 Capacitance Characteristics
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Fig.6 Gate Charge Characteristics
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WFF13N50 Product Description
Silicon N-Channel MOSFET
1 .2
3 .0
R D S(on) (Normalized)
BV DS (Normalized)
2 .5
1 .1
1 .0
2 .0
1 .5
1 .0
0 .9
Notes:
1.V G S =10V
2.I D =6.5A
0 .5
0 .8
-7 5
-5 0
-2 5
25
0
50
75
100
125
0 .0
-7 5
150
。
Tj[ C ]
-5 0
Operation in This Area
is limited by R DS(on)
I D D ra in C u rre nt[A ]
I D DrainCurrent[A]
10
1
1m s
0
DC
100m s
Notes:
1 . T c= 25 。
C
。
2.TJ=150 C
Single pulse
-1
125
150
0
10
1
10
8
6
4
0
25
-2
10
100
12
10m s
10
75
14
2
100us
10
50
Fig.8On-Resistance Variation
vs. Temperature
10us
10
25
0
。
Tj[ C ]
Fig.7 Breakdown Voltage Variation
vs. Temperature
10
-2 5
10
2
10
3
50
75
125
150
Fig.10 Maximum Drain Current
vs Case temperature
Fig.9 Maximum Safe Operation Area
ZθJC (t),Thermal Response
100
Tc Case Temperature[。
C ]
VD S Drain-Source Voltage[V]
D =0 .5
1
0 .2
* N o te ：
0 .1
。
1.Zθ J C (t)=2.5 C/W Max.
2.Duty Factor,D=t1/t2
3.T JM-T C=P DM* Z θJ C (t)
0 .0 5
0 .1
0 .0 2
0 .0 1
PD M
Single pulse
t1
0.01
t2
1 E -5
1 E-4
1 E-3
0.01
0 .1
1
10
t1 ,Square Wave Pulse Duration [sec]
Fig.11 Transient thermal Response Curve
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WFF13N50 Product Description
Silicon N-Channel MOSFET
50K Ω
12V
VG S
Same type
as D U T
Qg
200nF
10V
300nF
VD S
VG S
Qg s
Qg d
DUT
3m A
Ch a rg e
Fig.12 Gate Test circuit & Waveform
VD S
RG
RL
VD S
90%
VD D
VG S
VG S
DUT
10V
10%
td(on)
tr
td(off)
to n
tf
to f f
Fig.13 Resistive Switching Test Circuit & Waveform
L
EA S =
VD S
B V DSS
B V D S S - VD D
B V DSS
IA S
ID
RG
VD D
DUT
10V
1
L IA S 2
2
I D( t)
VD S( t )
VD D
tp
tp
Tim e
Fig.14 Unclamped Inductive Switching Test Circuit & Waveform
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WFF13N50 Product Description
Silicon N-Channel MOSFET
DUT
VD S
IS D
L
Driver
RG
S am e Type
as DUT
VG S
VD D
dv/dt controlled by RG
IS D conteolled by pulse period
VG S
Gate Pulse Width
Gate Pulse Period
D =
(Driver)
10V
IF M ,Body Diode Forward Current
IS D
di/dt
(DUT)
IR M
Body Diode Reverse Current
VD S
(DUT)
Body Diode Recovery dv/dt
VD D
VS D
Body Diode
Forward Voltage Drop
Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform
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WFF13N50 Product Description
Silicon N-Channel MOSFET
TO-220F Package Dimension
U n it:m m
E
符 号
Symbol
M IN
M AX
A
4 .5
4 .9
B
-
1 .4 7
b
0 .7
0 .9
c
0 .4 5
0 .6
D
1 5 .6 7
1 6 .0 7
E
9 .9 6
1 0 .3 6
Q
F
L2
D
P
e
L
B
b
C
2.54TYPE
F
2 .3 4
2 .7 4
L
1 2 .5 8
1 3 .3 8
L2
3 .1 3
3 .3 3
ФP
3 .0 8
3 .2 8
Q
3 .2
3 .4
Q1
2 .5 6
2 .9 6
Q1
e
A
e
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WFF13N50 Product Description
Silicon N-Channel MOSFET
NOTE:
1.We strongly recommend customers check carefully on the trademark when buying our product, if there is any
question, please don't be hesitate to contact us.
2.Please do not exceed the absolute maximum ratings of the device when circuit designing.
3.Winsemi Microelectronics Co., Ltd reserved the right to make changes in this specification sheet and is
subject to change without prior notice.
CONTACT:
Winsemi Microelectronics Co., Ltd.
ADD:Futian District, ShenZhen Tian An Cyber Tech Plaza two East Wing 1002
Post Code : 518040
Tel : +86-755-8250 6288
FAX : +86-755-8250 6299
Web Site : www.winsemi.com
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