20140310025503 8210

WFU2N60B Product Description
Silicon N-Channel MOSFET
Features
D
�
2A,600V,RDS(on)(Max 5.0Ω)@VGS=10V
�
Ultra-low Gate Charge(Typical 5.3nC)
�
Fast Switching Capability
�
100%Avalanche Tested
�
Maximum Junction Temperature Range(150℃)
G
S
General Description
This Power MOSFET is produced using Winsemi's advanced planar
stripe,VDMOS technology. This latest technology has been especially
designed to minimize on -state resistance,have a high rugged avalanche
characteristics. This devices is specially well suited for high efficiency
switch mode power supply .
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
Drain Source Voltage
600
V
Continuous Drain Current(@Tc=25℃)
2.0
A
Continuous Drain Current(@Tc=100℃)
1.3
A
8
A
±30
V
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note2)
121
mJ
EAR
Repetitive Avalanche Energy
(Note1)
4.5
mJ
dv/dt
Peak Diode Recovery dv /dt
(Note3)
4.4
V/ ns
46
W
0.35
W/℃
-55~150
℃
300
℃
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ,Tstg
TL
Junction and Storage Temperature
Channel Temperature
Thermal Characteristics
Symbol
Value
Parameter
Min
Typ
Max
Units
RQJC
Thermal Resistance , Junction -to -Case
-
-
2.7
℃/W
RQJA
Thermal Resistance , Junction-to -Ambient
-
-
110
℃/W
WT-F048-Rev.A1 Sep.2013
WINSEM I
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WINSEM I
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[email protected] Microelectronics Co., Ltd., All right reserved.
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WFU2N60B Product Description
Silicon N-Channel MOSFET
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Gate leakage current
Gate-source breakdown voltage
Drain cut -off current
Test Condition
Min
Type
Max
Unit
IGSS
VGS=±30V,VDS=0V
-
-
±100
nA
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
VDS=600V,V GS=0V
-
-
10
µA
VDS=480V,Tc=125℃
-
100
µA
IDSS
Drain -source breakdown voltage
V(BR)DSS
ID=250 µA,VGS=0V
600
-
-
V
Gate threshold voltage
VGS(th)
VDS = VGS ,ID=250 µA
2
-
4
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=1A
-
4.5
5.0
Ω
Forward Transconductance
gfs
VDS=50V,ID=1A
-
2.25
-
S
Input capacitance
Ciss
VDS=25V,
-
190
230
Reverse transfer capacitance
Crss
VGS=0V,
-
1.8
2.1
Output capacitance
Coss
f=1MHz
-
15
20
VDD=300V,
-
23
45
ID=2A,
-
7
23
RG=25Ω,
-
24
46
-
22
43
-
5.3
6
-
1.7
-
-
1.8
-
Turn-on Rise time
tr
Turn-on delay time
Td(on)
B
pF
Switching time
ns
Turn-off Fall time
tf
Turn-off delay time
(Note4,5)
Td(off)
Total gate charge(gate-source
VDD=480V,
Qg
plus gate-drain)
VGS=10V,
nC
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
ID=2A
(Note4,5)
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Continuous drain reverse current
IDR
-
-
-
2.0
A
Pulse drain reverse current
IDRP
-
-
-
8.0
A
Forward voltage(diode)
VDSF
IDR=2.0A,VGS=0V
-
-
1.4
V
Reverse recovery time
trr
IDR=2.A,VGS=0V,
-
180
-
ns
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
0.72
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=56mH IAS=2A,VDD=50V,RG=25Ω ,Starting TJ=25℃
3.ISD≤2A,di/dt≤200A/us,VDD<BVDSS,Starting TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
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WFU2N60B Product Description
Silicon N-Channel MOSFET
Top
10
VG S
15V
10V
8V
7V
。
150 C
ID[A]
ID[A]
6.5V
6V
5.5V
B ottom 5 V
1
1
。
25 C
N o te s:
1 .2 5 0 u s p u lse te st
2 .Tc=2 5 。
C
0 .1
0 .1
1
10
2
4
Notes:
1.250us pulse test
2.V D S =40V
6
8
10
VG S [V]
V D S [V ]
Fig.1 On-Region Characteristics
Fig.2 Transfer characteristics
7 .5
7 .0
V G S =10V
I DR [A]
R DS (on) [Ω]
6 .5
6 .0
25。
C
1
5 .5
V G S =20V
150。
C
5 .0
4 .5
Notes:
1.250us pulse test
2.V G S =0V
。
Note:T J=25 C
4 .0
0 .5
1 .0
2 .0
1 .5
2 .5
3 .0
0 .1
0 .4
3 .5
0 .5
0 .6
0 .7
0 .8
I D [A]
0 .9
1 .0
1 .1
1 .2
1 .3
VS D [V]
Fig.4 Body Diode Forward Voltage
Variation With Source Current
And temperature
Fig.3 On Resistance variation vs Drain
Current and Gate Voltage
12
400
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
360
C rss= C gd
VG S Gate source Voltage[V]
Capacitance[pF]
VD S =480V
10
320
Cis s
280
240
Co s s
200
160
Notes:
1. V DS = 0V
2. f =1MHz
120
Cr s s
80
VD S =300V
V D S =120V
8
6
4
2
40
0
100
1 0 -1
0
1 01
0
1
VD S [V]
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4
5
Q g Toltal Gate Charge[nC]
Fig.5 Capacitance Characteristics
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Fig.6 Gate Charge Characteristics
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WFU2N60B Product Description
Silicon N-Channel MOSFET
3 .0
1 .2
2 .5
R DS(on) (Normalized)
BV D SS(Normalized)
1 .1
1 .0
Notes:
1.VG S =0V
2.ID =250uA
0 .9
0 .8
-7 5
-5 0
-2 5
0
25
50
75
。
T j [ C]
100
125
2 .0
1 .5
1 .0
N otes:
1.V G S =10V
2.I D=1.0A
0 .5
0 .0
-7 5
150
-5 0
Fig.7 Breakdown Voltage Variation
Vs,Temperature
-2 5
0
25
50
。
T j [ C]
75
100
125
150
Fig.8 On-Resistance Variation
vs.temperature
2 .0
Operation in This Area
is limited by R DS(on)
101
1 .8
1 .6
100us
1 .4
ID [A]
100
I D[A]
1m s
10ms
DC
1 .2
1 .0
0 .8
0 .6
1 0 -1
0 .4
Notes:
1 . T c=25。
C
。
2.TJ=150 C
Single pulse
0 .2
0 .0
25
1 0 -2
100
10
1
10
2
10
50
75
125
150
Tc [ C]
VD S [V]
Fig.9 Maximum Safe Operation Area
ZθJC(t),Thermal REsponse
100
。
3
Fig.10 Maximum Drain Current vs
Case Temperature
D = 0. 5
* N o te :
100
1.Zθ J C (t)=2.87 。
C/W Max.
2.Duty Factor,D=t1/t2
3.T JM*T C=P DM* Z θ J C (t)
0 .2
0 .1
0 .0 5
PD M
0 .0 2
1 0 -1
0 .0 1
t1
t2
Single Pulse
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
1 00
1 01
t1 ,Square Wave Pulse Duration [sec]
Fig.11 Transient Thermal Response curve
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WFU2N60B Product Description
Silicon N-Channel MOSFET
50K Ω
12V
VG S
Same type
as D U T
Qg
200nF
10V
300nF
VD S
VG S
Qg s
Qg d
DUT
3m A
Ch a rg e
Fig.12 Gate Test Circuit & Waveform
VD S
RG
RL
VD S
90%
VD D
VG S
VG S
DUT
10V
10%
td(on)
tr
td(off)
to n
tf
to f f
Fig.13 Resistive Switching Test Circuit & Waveform
L
EA S =
VD S
B V DSS
B V D S S - VD D
B V DSS
IA S
ID
RG
VD D
DUT
10V
1
L IA S 2
2
I D( t)
VD S( t )
VD D
tp
tp
Tim e
Fig.14 Unclamped Inductive Switching Test Circuit & Waveform
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WFU2N60B Product Description
Silicon N-Channel MOSFET
DUT
VD S
IS D
L
Driver
RG
Sam e Type
as DUT
VG S
VD D
dv/dt controlled by RG
IS D conteolled by pulse period
VG S
D =
(Driver)
Gate Pulse Width
Gate Pulse Period
10V
IF M ,Body Diode Forward Current
IS D
di/dt
(DUT)
IR
M
Body Diode Reverse Current
VD S
(DUT)
Body Diode Recovery dv/dt
VD D
VS D
Body Diode
Forward Voltage Drop
Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform
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WFU2N60B Product Description
Silicon N-Channel MOSFET
TO251 Package Dimension
U n it:m m
E
A
F
符 号
symbol
M IN
M AX
A
2 .1 9
2 .3 8
b
0 .6 4
0 .8 9
D1
E1
L2
D
c
Q1
0 .4 6
0 .5 8
D
5 .9 7
6 .2 2
D1
0 .8 9
1 .2 7
E
6 .3 5
6 .7 3
E1
5 .2 1
5 .4 6
e
2 .2 8 T Y P
F
0 .4 6
0 .5 8
L
8 .8 9
9 .6 5
L2
2 .2 5
2 .3 5
Q1
1 .0 2
1 .1 4
L
b
c
e
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WFU2N60B Product Description
Silicon N-Channel MOSFET
NOTE:
1.We strongly recommend customers check carefully on the trademark when buying our product, if there is any
question, please don't be hesitate to contact us.
2.Please do not exceed the absolute maximum ratings of the device when circuit designing.
3.Winsemi Microelectronics Co., Ltd reserved the right to make changes in this specification sheet and is
subject to change without prior notice.
CONTACT:
Winsemi Microelectronics Co., Ltd.
ADD:Futian District, ShenZhen Tian An Cyber Tech Plaza two East Wing 1002
Post Code : 518040
Tel : +86-755-8250 6288
FAX : +86-755-8250 6299
Web Site : www.winsemi.com
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