20140926011846 2148

WFP8N60 Product Description
Silicon N-Channel MOSFET
Features
�
7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V
�
Ultra-low Gate charge(Typical 54nC)
�
Fast Switching Capability
�
100%Avalanche Tested
�
Maximum Junction Temperature Range(150℃)
D
G
S
General Description
This Power MOSFET is produced using Winsemi's advanced planar
stripe,VDMOS technology. this latest technology has been especially
designed to minimize on-state resistance, have a high rugged
avalanche characteristics .This devices is specially well suited for half
bridge and full bridge resonant topology line a electronic lamp ballast,
high efficiency switched mode power supplies, active power factor
correction.
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
Drain Source Voltage
600
V
Continuous Drain Current(@Tc=25℃)
7.5
A
Continuous Drain Current(@Tc=100℃)
4.4
A
28
A
±30
V
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note2)
420
mJ
EAR
Repetitive Avalanche Energy
(Note1)
7
mJ
EAR
Repetitive Avalanche Energy
(Note1)
14.7
mJ
dv/dt
Peak Diode Recovery dv /dt
(Note3)
5.5
V/ ns
Total Power Dissipation(@Tc=25℃)
147
W
Derating Factor above 25℃
1.18
W/℃
-55~150
℃
300
℃
PD
TJ,Tstg
TL
Junction and Storage Temperature
Channel Temperature
Thermal Characteristics
Symbol
Value
Parameter
Min
Typ
Max
Units
RQJC
Thermal Resistance , Junction -to -Case
-
-
0.85
℃/W
RQJA
Thermal Resistance , Junction-to -Ambient
-
-
62.5
℃/W
WT-F053-Rev.A0 Oct.2013
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WFP8N60 Product Description
Silicon N-Channel MOSFET
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Gate leakage current
Gate-source breakdown voltage
Test Condition
Min
Type
Max
Unit
IGSS
VGS=±30V,VDS=0V
-
-
±100
nA
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
VDS=600V,VGS=0V
-
-
10
µA
VDS=480V,Tc=125℃
-
-
100
µA
600
-
-
V
ID=250 µA,Referenced to 25℃
-
0.65
-
V/℃
Drain cut -off current
IDSS
Drain -source breakdown voltage
V(BR)DSS
Breakdown Voltage temperature Coefficient
∆BVDSS/∆TJ
ID=250 µA,VGS=0V
Gate threshold voltage
VGS(th)
VDS=VGS,ID=250 µA
2
-
4
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=3.75A
-
1.0
1.2
Ω
Forward Transconductance
gfs
VDS=40V,ID=3.75A
-
8.2
-
S
Input capacitance
Ciss
VDS=25V,
-
1380
1800
Reverse transfer capacitance
Crss
VGS=0V,
-
23
30
Output capacitance
Coss
f=1MHz
-
115
150
VDD=300V,
-
80
170
Turn-on Rise time
tr
Turn-on delay time
Td(on)
ID=7.5A
-
30
70
tf
RG=25Ω
-
85
180
-
125
260
-
54
65
-
6.8
-
-
23
-
Min
Type
pF
Switching time
ns
Turn-off Fall time
Turn-off delay time
(Note4,5)
Td(off)
Total gate charge(gate-source
VDD=480V,
Qg
plus gate-drain)
VGS=10V,
nC
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
ID=7.5A
(Note4,5)
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Max
Unit
Continuous drain reverse current
IDR
-
-
-
7.5
A
Pulse drain reverse current
IDRP
-
-
-
28
A
Forward voltage(diode)
VDSF
IDR=7.5A,VGS=0V
-
-
1.4
V
Reverse recovery time
trr
IDR=7.5A,VGS=0V,
-
415
-
ns
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
4.6
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=15.7mH IAS=7.5A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤7.5A,di/dt≤300A/us,VDD<BVDSS,Starting TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
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WFP8N60 Product Description
Silicon N-Channel MOSFET
VG S
Top
10
15V
10V
8V
7V
10
2 5。C
I D[A]
I D[A]
6.5V
6V
5.5V
B ottom 5 V
150。C
1
Notes:
1.250us pulse test
2 . T c =25 。
C
1
1
Notes:
1.250us pulse test
2.VD S =40V
10
2
4
6
V D S [V]
8
10
V G S [V]
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
1 .4 0
1 .3 5
10
VG S =10V
1 .2 5
I DR [A]
R DS(on) [Ω]
1 .3 0
1 .2 0
2 5。C
1 .1 5
1
1 .1 0
150。C
VG S =20V
Notes:
1.250us pulse test
2.VG S =0V
1 .0 5
Note:T J =25。
C
1 .0 0
0 .9 5
2
0
4
6
8
10
0 .1
0 .4
0 .5
0 .6
0 .7
0 .8
I D [A]
0 .9
Fig.3 On-Resistance Variation vs Drain
Currentand Gate Voltage
1 .2
1 .3
1 .4
1 .5
Fig.4 Body Diode Forward Voltage Variation
with Source Current and Temperature
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
VD S =480V
10
Crss=Cgd
2500
VD S =300V
2000
Ci s s
1500
1000
Co s s
Notes:
1.VG S =0V
2.f=1MHz
Cr s s
500
0
1 0 -1
100
V GS Gate Source Voltage[V]
Capacitance[pF]
1 .1
12
3000
8
6
4
2
0
101
VD S =120V
0
10
V D S [V]
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20
30
40
50
60
Qg Toltal Gate Charge[nC]
Fig.5 Capacitance Characteristics
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VS D [V]
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Fig.6 Gate Charge Characteristics
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WFP8N60 Product Description
Silicon N-Channel MOSFET
1 .2
3 .0
R (on) (Normalized)
BV DS (Normalized)
2 .5
1 .1
1 .0
0 .9
Notes:
1.VG S =0V
2 . I D=250uA
0 .8
-7 5
-5 0
-2 5
0
25
50
75
100
125
2 .0
1 .5
1 .0
Notes:
1.VG S =10V
2.ID =3.5A
0 .5
0 .0
150
-7 5
。
TJ [ C]
-5 0
-2 5
0
25
50
75
100
125
150
。
TJ [ C]
Fig.7 Breakdown Voltage Variation
vs. Temperature
Fig.8 On-Resistance Variation
vs. Temperature
8
102
10us
100us
1
1ms
I D [A ]
10
6
10ms
I D[A]
10
Operation in T his Area
is Lim ited by R D S ( on)
DC
0
4
2
1 0 -1
Notes:
1.Tc=25。
C
2 .T J=150 。
C
3.Single pulse
10
-2
100
101
102
0
25
103
50
75
100
125
150
Tc[°C]
V D S [V]
Fig.9 Maximum Safe Operation Area
Fig.10 Maximum Drain Current vs
Case Temperature
ZθJC (t),Thermal Response
100
D= 0. 5
* N o te:
1 0 -1
。
1.Zθ J C (t)=0 . 85 C/W Max.
2.Duty Factor,D=t1/t2
3.T JM-T C=P DM* Zθ J C (t)
0. 2
0. 1
0. 05
PD M
0. 02
0. 01
t1
Single pulse
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t 1 [sec]
Fig.11 Transient Thermal Response Curve
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WFP8N60 Product Description
Silicon N-Channel MOSFET
50K Ω
12V
VG S
Same type
as D U T
Qg
200nF
10V
300nF
VD S
VG S
Qg s
Qg d
DUT
3m A
Ch a rg e
Fig.12 Gate Test Circuit & Waveform
VD S
RG
RL
VD S
90%
VD D
VG S
VG S
DUT
10V
10%
td(on)
tr
td(off)
to n
tf
to f f
Fig.13 Resistive Switching Test Circuit & Waveform
L
EA S =
VD S
B V DSS
B V D S S - VD D
B V DSS
IA S
ID
RG
VD D
DUT
10V
1
L IA S 2
2
I D( t)
VD S( t )
VD D
tp
tp
Tim e
Fig.14 Unclamped Inductive Switching Test Circuit & Waveform
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WFP8N60 Product Description
Silicon N-Channel MOSFET
DUT
VD S
IS D
L
Driver
RG
Sam e Type
as DUT
VG S
VD D
dv/dt controlled by RG
IS D conteolled by pulse period
VG S
Gate Pulse Width
Gate Pulse Period
D =
(Driver)
10V
IF M ,Body Diode Forward Current
IS D
di/dt
(DUT)
IR M
Body Diode Reverse Current
VD S
(DUT)
Body Diode Recovery dv/dt
VD D
VS D
Body Diode
Forward Voltage Drop
Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform
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WFP8N60 Product Description
Silicon N-Channel MOSFET
TO-220C Package Dimension
U n It:m m
E
A
7
Q
F
D2
D
P
L
L2
B
符 号
M IN
MAX
A
4 .3 0
4 .7 0
B
1 .1 0
1 .4 0
b
0 .7 0
0 .9 5
c
0 .4 0
0 .6 5
d
1 5 .2
1 6 .2
D2
9 .0 0
9 .4 0
E
9 .7 0
1 0 .1 0
e
2 .3 9
2 .6 9
F
1 .2 5
1 .4 0
L
1 2 .6 0
1 3 .6 0
L2
2 .8 0
3 .2 0
Q
2 .6 0
3 .0 0
Q1
2 .2 0
2 .6 0
P
3 .5 0
3 .8 0
b
c
Q1
e
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WFP8N60 Product Description
Silicon N-Channel MOSFET
NOTE:
1.We strongly recommend customers check carefully on the trademark when buying our product, if there is any
question, please don't be hesitate to contact us.
2.Please do not exceed the absolute maximum ratings of the device when circuit designing.
3.Winsemi Microelectronics Co., Ltd reserved the right to make changes in this specification sheet and is
subject to change without prior notice.
CONTACT:
Winsemi Microelectronics Co., Ltd.
ADD:Futian District, ShenZhen Tian An Cyber Tech Plaza two East Wing 1002
Post Code : 518040
Tel : +86-755-8250 6288
FAX : +86-755-8250 6299
Web Site : www.winsemi.com
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