20131114075740 3572

F12N6
5
WF
WFF
N65
Silicon N-Channel MOSFET
Features
■ 12A,650V,RDS(on)(Max0.78Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 51.7nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi ’s advanced
planar stripe, VDMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. This devices is specially well
suited for AC- DCs w itching pow er supplies , DC- DCpow er
c onv e r t er s , h i g h v olt a ge H- b r i d ge mo to r dr i v e P WM
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
Drain Source Voltage
650
V
Continuous Drain Current(@Tc=25℃)
12*
A
Continuous Drain Current(@Tc=100℃)
7.6*
A
48*
A
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
±30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
990
mJ
EAR
Repetitive Avalanche Energy
(Note 1)
22
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
51
W
0.41
W/℃
-55~150
℃
300
℃
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ, Tstg
TL
Junction and Storage Temperature
Channel Temperature
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
Value
Units
Min
Typ
Max
2.45
℃/W
RQJC
Thermal Resistance, Junction-to-Case
-
-
RQ CS
Thermal Resistance, Case-to-Sink
-
-
-
℃/W
RQJA
Thermal Resistance, Junction-to-Ambient
-
-
62.5
℃/W
Rev.A Oct.2010
Copyr [email protected] Microelectronics Co., Ltd., All right reserved.
F12N6
5
WF
WFF
N65
Electrical Characteristics (Tc = 25°C)
Characteristics
Gate leakage current
Symbol
I GSS
Gate−source breakdown
V(BR)GSS
Test Condition
Min
Type
Max
Unit
-
-
±100
nA
±30
-
-
V
V DS = 650 V, VGS = 0 V
-
-
10
μA
V DS = 480 V, Tc = 125℃
-
-
100
μA
650
-
-
V
V GS = ±30 V, VDS = 0 V
I G = ±10 μA, VDS = 0 V
voltage
Drain cut−off current
I DSS
Drain−source breakdown
V(BR)DSS
I D = 250 μA, V GS = 0 V
voltage
Gate threshold voltage
VGS(th)
V DS = 10 V, I D =250 μA
3
-
4.5
V
Drain−source ON resistance
R DS(ON)
V GS = 10 V, I D = 6A
-
0.64
0.78
Ω
Forward Transconductance
gfs
V DS = 50 V, I D = 6A
-
6.4
-
S
Input capacitance
C iss
V DS = 25 V,
-
1830
-
Reverse transfer capacitance
Crss
V GS = 0 V,
-
2.2
-
Output capacitance
Coss
f = 1 MHz
-
155
-
Switching
time
Rise time
tr
V DD =325 V,
-
50
-
Turn−on time
ton
I D =12A
-
49
-
Fall time
tf
R G=25 Ω
-
310
-
Turn−off time
toff
-
54
-
-
51.7
-
-
9.6
-
-
18.6
-
pF
ns
(Note4,
Total
gate
charge
Qg
(gate−source plus gate−drain)
5)
V DD = 520 V,
V GS = 10 V,
Gate−source charge
Qgs
Gate−drain (“miller ”) Charge
Qgd
I D = 12 A
(Note4,5)
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Symbol
Test Condition
Min
Type
Max
Un
it
I DR
-
-
-
12
A
Pulse drain reverse current
I DRP
-
-
-
48
A
Forward voltage (diode)
VDSF
I DR = 12 A, VGS = 0 V
-
-
1.4
V
Reverse recovery time
trr
I DR = 12 A, VGS = 0 V,
-
450
-
ns
Reverse recovery charge
Qrr
dIDR / dt = 100 A / μs
-
5.0
-
μC
Characteristics
Continuous
drain
reverse
current
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=14mH,IAS=12A,VDD=95V,RG=25Ω ,Starting TJ=25℃
3.ISD≤ 12A,di/dt≤ 200A/us, V DD<BVDSS,STARTING TJ =25℃
4.Pulse Test: Pulse Width≤ 300us,Duty Cycle≤ 2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
2/7
Steady, keep you advance
F12N6
5
WF
WFF
N65
Please handle with caution
Fig.1 On-State Characteristics
Fig.3 On-Resistance variation
vs Drain Current
Fig.2 Transfer Current Characteristics
Fig.4 Body Diode Forward Voltage
Variation with Source Current
and Temperature
3/7
Steady, keep you advance
F12N6
5
WF
WFF
N65
Fig.8 On-Resistance Variation vs
Junction Temperature
Fig.7 Maximum Safe Operation Area
Fig.6 Gate Charge Characteristics
Fig.8 Maximum Drain Current
vs Case Temperature
Fig.9 Transient Thermal Response curve
4/7
Steady, keep you advance
F12N6
5
WF
WFF
N65
Fig.10 Gate Test circuit & Waveform
Fig.11 Resistive Switching Test Circuit & Waveform
Fig.12 Uncamped Inductive Switching Test Circuit & Waveform
5/7
Steady, keep you advance
F12N6
5
WF
WFF
N65
Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform
6/7
Steady, keep you advance
F12N6
5
WF
WFF
N65
TO-220 Package Dimension
Unit:mm
7/7
Steady, keep you advance