20141110080329 4936

WFF9N90
Product Description
Silicon N-Channel MOSFET
Features
D
�
9A,900V,RDS(on)(Max1.35Ω)@VGS=10V
�
Ultra-low Gate charge(Typical 43nC)
�
Fast Switching Capability
�
100%Avalanche Tested
�
Maximum Junction Temperature Range(150℃)
G
S
General Description
This Power
MOSFET is produced using Winsemi's advanced
planar stripe,VDMOS technology.this latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics .This devices is specially well
suited for half bridge and full bridge resonant topology line a
electronic lamp ballast, high efficiency switched mode power
supplies, active power factor correction.
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
900
V
Continuous Drain Current(@Tc=25℃)
9*
A
Continuous Drain Current(@Tc=100℃)
6.0*
A
36*
A
±30
V
Drain Source Voltage
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note2)
858
mJ
EAR
Repetitive Avalanche Energy
(Note1)
27.7
mJ
dv/dt
Peak Diode Recovery dv /dt
(Note3)
4.1
V/ ns
68
W
0.54
W/℃
-55~150
℃
300
℃
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ,Tstg
TL
Junction and Storage Temperature
Channel Temperature
Thermal Characteristics
Value
Symbol
Parameter
Min
Typ
Max
Units
RQJC
Thermal Resistance , Junction -to -Case
-
-
1.84
℃/W
RQJA
Thermal Resistance , Junction-to -Ambient
-
-
62.5
℃/W
WT-F024--Rev.A1 Nov.2014
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WINSEMI
MICROELECTRONICS
[email protected] Microelectronics Co., Ltd., All right reserved.
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WFF9N90 Product Description
Silicon N-Channel MOSFET
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Gate leakage current
Gate-source breakdown voltage
Test Condition
Min
Type
Max
Unit
IGSS
VGS=±30V,VDS=0V
-
-
±100
nA
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
IDSS
VDS=900V,VGS=0V,TC=25℃
-
-
1
µA
IDSS
VDS=720V,VGS=0V,TC=125℃
-
-
10
µA
Drain cut -off current
V(BR)DSS
ID=250uA,VGS=0V
900
-
-
V
Gate threshold voltage
VGS(th)
VDS=10V,ID=1mA
3
-
4.5
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=4.5A
-
1.1
1.35
Ω
Forward Transconductance
gfs
VDS=15V,ID=4.5A
-
9.5
-
S
Input capacitance
Ciss
VDS=25V,
-
2150
2830
Reverse transfer capacitance
Crss
VGS=0V,
-
13
17
-
189
246
-
116
235
-
53
121
-
69
171
-
97
199
-
43
56
-
15
-
-
21
-
Min
Type
Drain -source breakdown voltage
Coss
Output capacitance
tr
Rise time
ton
Turn-on time
Switching time
tf
Fall time
pF
f=1MHz
VDD=400V,
ID=9A
ns
RG=100Ω
(Note4,5)
toff
Turn-off time
VDD=400V,
Total gate charge(gate-source
Qg
VGS=10V,
plus gate-drain)
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
ID=9A
nC
(Note4,5)
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Max
Unit
Continuous drain reverse current
IDR
-
-
-
9
A
Pulse drain reverse current
IDRP
-
-
-
36
A
Forward voltage(diode)
VDSF
IDR=9A,VGS=0V
-
-
1.4
V
Reverse recovery time
trr
IDR=9A,VGS=0V,
-
539
-
ns
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
641
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=20mH IAS=9A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤9A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
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WFF9N90 Product Description
Silicon N-Channel MOSFET
To p
VG S
15V
10V
9V
8V
7V
6 .5 V
6V
5 .5 V
5V
10
ID [A ]
I D [A]
10
1 5 0 °C
2 5 °C
1
1
Notes:
1.250µs pulse test
2.Tc = 25°C
No te s:
1 .2 5 0 µs p u lse te st
2 .VD S =4 0 V
0 .1
1
10
2
10
VG S [V]
VD S [V]
Fig.2 Transfer Characteristics
Fig.1 On Region Characteristics
10
1 .6
V GS =1 0V
1 .4
I DR[ A]
RDS(ON)[Ω]
8
6
4
V G S =20V
1 5 0 °C
2 5 °C
1
1 .2
Notes:
1.250µs pulse test
2.VG S =0V
Note:TJ =25°C
1 .0
2
0
4
8
6
10
12
0 .1
0 .2 0. 3 0 . 4 0 . 5 0 . 6 0 . 7 0 . 8 0 . 9 1 . 0
14
1 .1 1 .2 1 .3 1 .4 1 .5
ID [A]
VS D [V]
Fig.3 On-Resistance Variation vs Drain
Current and Gate Voltage
Fig.4 Body Diode Forward Voltage Variation vs.
Source Current and Temperature
12
3X 10
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd
3
720V
10
450V
180V
2X 10
V GS (V)
pF
8
3
C is s
6
C o ss
1X 10
4
3
Note:
1.VG S =0V
2.f=1MHz
2
Note:I D=9.0A
C rs s
0
-1
10
10
0
10
0
1
10
0
VD S [V]
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Qg(nC)
Fig.6 Gate Charge Characteristics
Fig.5 Capacitance Characteristics
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WFF9N90 Product Description
Silicon N-Channel MOSFET
1 .2
4 .0
3 .5
3 .0
R DS( ON)
BVDSS
1 .1
1 .0
2 .5
2 .0
1 .5
0 .9
1 .0
Note:
1.VG S =0V
2.ID =250uA
0 .8
-7 5
-5 0
-2 5
0
25
75
50
100
Note:
1.VG S =0V
2.ID =4.5A
0 .5
0 .0
-7 5
150
125
-5 0
-2 5
0
25
75
50
T J (° C )
100
125
150
T J (° C )
Fig.7 Breakdown Voltage Variation
vs. Temperature
Fig.8On-Resistance Variation
vs. Temperature
10
10
O p e ra ti o n i n T h i s A re a
i s L i m i te d b y RDS(ON)
2
10
100µs
1
1m s
I D [A]
I D [A]
8
6
10ms
10
4
100ms
0
DC
2
No te s:
10
1 . Tc=2 5 °C
2 . TJ=150°C
3.Single pulse
-1
10
0
10
1
10
2
10
0
3
25
50
V D S [V]
Zθ JC (t ),Thermal Response
125
150
Tc(° C )
Fig.10 Maximum Drain Current
vs Case temperature
Fig.9 Maximum Safe Operation Area
1
100
75
D = 0 .5
0 .2
0 .1
0 .1
* N o t e:
1.ZθJ C (t)=1.84°C/W Max.
2.Duty Factor,D=t1/t2
3.TJM -TC =PDM * Zθ J C (t)
0 .0 5
0 .0 2
0 .0 1
Single pulse
PD M
0 .0 1
t1
t2
1E -5
1E -4
1E -3
0 .0 1
0 .1
1
10
t1 Square Wave Pulse Duration[sec]
Fig.11 Transient thermal Response Curve
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WFF9N90 Product Description
Silicon N-Channel MOSFET
50K Ω
12V
VG S
Same type
as D U T
Qg
200nF
10V
300nF
VD S
VG S
Qg s
Qg d
DUT
3m A
Ch a rg e
Fig.12 Gate Test circuit & Waveform
VD S
RG
RL
VD S
90%
VD D
VG S
VG S
DUT
10V
10%
td(on)
tr
td(off)
to n
tf
to f f
Fig.13 Resistive Switching Test Circuit & Waveform
L
EA S =
VD S
B V DSS
B V D S S - VD D
B V DSS
IA S
ID
RG
VD D
DUT
10V
1
L IA S 2
2
I D( t)
VD S( t )
VD D
tp
tp
Tim e
Fig.14 Unclamped Inductive Switching Test Circuit & Waveform
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WFF9N90 Product Description
Silicon N-Channel MOSFET
DUT
VD S
IS D
L
Driver
RG
S am e Type
as DUT
VG S
VD D
dv/dt controlled by RG
IS D conteolled by pulse period
VG S
D =
(Driver)
Gate Pulse Width
Gate Pulse Period
10V
IF M ,Body Diode Forward Current
IS D
di/dt
(DUT)
IR M
Body Diode Reverse Current
VD S
(DUT)
Body Diode Recovery dv/dt
VD D
VS D
Body Diode
Forward Voltage Drop
Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform
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WFF9N90 Product Description
Silicon N-Channel MOSFET
TO-220F Package Dimension
U n it:m m
E
符 号
Symbol
M IN
MAX
A
4 .5
4 .9
B
-
1 .4 7
b
0 .7
0 .9
c
0 .4 5
0 .6
D
1 5 .6 7
1 6 .0 7
E
9 .9 6
1 0 .3 6
Q
F
L2
D
P
e
L
B
b
C
2.54TYPE
F
2 .3 4
2 .7 4
L
1 2 .5 8
1 3 .3 8
L2
3 .1 3
3 .3 3
ФP
3 .0 8
3 .2 8
Q
3 .2
3 .4
Q1
2 .5 6
2 .9 6
Q1
e
A
e
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WFF9N90 Product Description
Silicon N-Channel MOSFET
NOTE:
1.We strongly recommend customers check carefully on the trademark when buying our product, if there is any
question, please don't be hesitate to contact us.
2.Please do not exceed the absolute maximum ratings of the device when circuit designing.
3.Winsemi Microelectronics Co., Ltd reserved the right to make changes in this specification sheet and is
subject to change without prior notice.
CONTACT:
Winsemi Microelectronics Co., Ltd.
ADD:Room 1002, East, Phase 2, HighTech Plaza,Tian-An Cyber Park,Che gong miao, FuTian, Shenzhen, P.R.
China.
Post Code : 518040
Tel : +86-755-8250 6288
FAX : +86-755-8250 6299
Web Site : www.winsemi.com
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