20140109013624 3787

WFF4N65S Product Description
650V Super-Junction Power MOSFET
Features
D
�
Ultra low R dson
�
Ultra low gate charge (typ. Qg =13nC)
�
100% UIS tested
�
RoHS compliant
G
S
General Description
Power MOSFET
is fabricated using advanced super junction
technology. The resulting device has extremely low on resistance,
making it especially suitable for applications which require superior
power density and outstanding efficiency.
Absolute Maximum Ratings
Symbol
VDSS
ID
Parameter
VGS
Gate to Source Voltage
EAR
V
4
(Tc=100℃)
Drain Current Pulsed 1)
I AR
Units
650
Continuous Drain Current (Tc=25℃)
I DM
EAS
Value
Drain Source Voltage
Single Pulse Avalanche Energy
12
A
±30
V
2)
130
mJ
1)
4
A
0.4
mJ
29
W
0.23
W/℃
Single Pulse Avalanche Current
Repetitive Avalanche Energy
A
2.5
1)
Total Power Dissipation(@Tc=25℃)
PD
-Derate above 25℃
TJ
Junction Temperature
150
℃
T stg
Storage Temperature
-55~150
℃
Continuous diode forward current
4
A
Diode pulse current
12
A
Is
Is,pulse
Notes:
1.Repetitive Rating:Pulse width limited by maximum Junction Temperature
2.I AS=2A,VDD=60V,RG=25Ω,Starting TJ =25℃
Thermal Characteristics
Symbol
Value
Parameter
Min
Typ
Max
Units
RQJC
Thermal Resistance , Junction -to -Case
-
-
4.3
℃/W
RQJA
Thermal Resistance , Junction-to -Ambient
-
-
80
℃/W
WT-F051-Rev.A1 Nov.2013
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Copyr [email protected] Microelectronics Co., Ltd., All right reserved.
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WFF4N65S Product Description
650V Super-Junction Power MOSFET
Electrical Characteristics(Tc=25℃ unless otherwise noted)
Characteristics
Symbol
Gate leakage current
I GSS
Test Condition
Min
Type
Max
Unit
-
-
±100
nA
Tj=25℃
-
-
1
µA
Tj=125℃
-
10
-
VGS =±30V,VDS =0V
VDS =650,VGS =0V,
Drain cut -off current
I DSS
Drain -source breakdown voltage
V(BR)DSS
I D=250µA,VGS =0V
650
-
-
V
VGS(th)
VDS =VGS,I D=250uA
2.5
3.5
4.5
V
Tj=25℃
-
0.83
0.93
Ω
Tj=150℃
-
1.9
-
Gate threshold voltage
VGS =10V,ID=2A
Drain -source ON resistance
R DS(ON)
Gate resistance
RG
f=1MHz,open drain
-
0.4
Input capacitance
C iss
VDS =25V,
-
450
Reverse transfer capacitance
C rss
VGS =0V,
-
5
Output capacitance
C oss
f=1MHz
-
300
-
13
-
Turn-on delay time
td(on)
pF
tr
VDD = 300V, I D = 2A
-
12
-
td(off)
R G = 12Ω, VGS =10V
-
31
-
tf
-
9
-
Gate to source charge
Qgs
-
3
-
Gate to drain charge
Q gd
VDD=480V,ID=2A,
-
6
-
Gate charge total
Qg
VG S=0 to 10 V
-
13
-
-
5. 8
-
Min
Type
Rise time
Turn-off delay time
Fall time
ns
Vplateau
Gate plateau voltage
Ω
nC
V
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Max
Unit
Diode forward voltage
VSD
V GS=0 V, I F=2A
-
-
1.2
V
Reverse recovery time
trr
V R=50 V, I F=4A,
-
220
-
ns
Reverse recovery charge
Qrr
dIF/dt=100 A/μs
-
1.6
-
µc
Peak reverse recovery current
I rr m
-
12
-
A
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WFF4N65S Product Description
650V Super-Junction Power MOSFET
8
10
V G S =10V
C om m。
on Sourc e
Tc =25 C
Puls e Tes t
7
C om m on Sourc e
。
Tc =25 C
VD S =20V
Puls e Tes t
9
VG S =7V
8
5
VG S =6.5V
4
3
VG S =6V
2
VG S =5.5V
1
7
Drain current ID(A)
Drain current I D(A)
6
6
5
4
3
2
1
0
0
0
4
6
12
Drain-source voltage V
16
2
(V)
GS
Fig.2 Transfer characteristics
1 .5
1 .3
1 .4
1 .2
1 .3
Vth ,(No rma lized)
Gate threshold voltage
1 .1
1 .2
R DS (on)[ Ω]
8
6
Gate-source voltage V
Fig.1 On-Region characteristics
1 .1
1
0 .9
0 .8
0 .7
0 .6
1
0 .9
0 .8
0 .7
ID S =0.25mA
Pulse test
0 .6
0 .5
0
5
10
15
Drain Current I
D
20
-6 0
-4 0
-2 0
(A)
0
20
40
60
80
Junction temperatureT
Fig.3 On-Resistance Variation vs Drain
Current
100
120
J(
C)。
140
160
Fig.4 Threshold Voltage vs. Temperature
2 .5
RD S(ON ) ,( Normalized)
Dr ain-So urce O n-Resist ance
1 .2
BV DSS, (Normalized)
Drain-Source Breakdo wn Voltage
4
DS (V)
1 .1
1
0 .9
V G S =0V
ID S =0.25mA
Puls e tes t
0 .8
2
1 .5
1
0 .5
V =10V
I =2A
Pu lse te st
0
0 .7
-60
-40
-20
0
20
40
60
80
100
120
140
160
-6 0
-4 0
。
Junction temperatureT J ( C)
Fig.5 Breakdown Voltage vs.Temperature
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-2 0
0
20
40
60
80
100
Junction temperatureT J ( 。
C)
120
140
160
Fig.6 On-Resistance vs.Temperature
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WFF4N65S Product Description
650V Super-Junction Power MOSFET
10000.00
10
VD S =120V
8
Cis s
Gate-Source Voltag e V GS (V)
capaci ta nce (pF)
1000.00
Co s s
100.00
Ci s s = C g s + C g d ( C d s shorted)
C c iss = C g d
Co s s = C d s + C g d
1 0 .0 0
1 .0 0
Cr ss
Notes:
f=1M Hz
VG S =0V
V D S =480V
6
4
2
ID=2A
0
0 .1 0
0 .1
1
10
0
100
Drain-Source Voltge V
4
6
8
Total Gate Charge Q
10
G
12
14
(nC)
Fig.8 Gate Charge Characteristics
Fig.7Capacitance Characreristics
40
10
Limlied by R
D S( on)
Drai n p owe r dissipa tio n P D (W )
100
Drai n Cu rrent I D(A)
2
D S(V)
100us
1ms
1
Notes :
Tc =25。
C
Tc =25。
C
Single Puls e
0 .1
35
30
25
20
15
10
5
0
0 .0 1
1
10
100
Drain-Source Voltage V
0
1000
40
80
120
160
。
Case temper atur e T c ( C)
(V)
DS
Fig.9 Maximum Safe Operation Area
Fig.10 Power Dissipation vs.Temperature
1. 0E+01
ZθJC Normal ized Transient
Thermal Resistance
In des c ending or der
D= 0.7,0.5,0.3,0.1,0.05,0.02,0.01,s ingle puls e
1. 0E+00
1. 0E-01
PD M
t
1. 0E-02
D u ty= t/T
C /W Ma x.
ZθJC (t)=4.3 。
T
1. 0E-03
1. 0E-06
1. 0E-05
1. 0E-04
1. 0E-03
1. 0E-02
1. 0E-01
1. 0E+00
1. 0E+01
1. 0E+02
1. 0E+03
Pulse Width t (s)
Fig.11 Transient Thermal Response Curve
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WFF4N65S Product Description
650V Super-Junction Power MOSFET
VG S
RL
Qg
10V
VD S
VG S
Qg s
Qg d
DUT
10m A
C har ge
Fig.12 Gate Charge Test Circuit & Waveform
RL
VD S
VD S
VD D
VG S
RG
90%
VG S
DUT
10V
10%
td(on)
tr
to n
td( off)
tf
to ff
Fig.13 Switching Test Circuit & Waveforms
L
EA R =1/2LI
V ds
2
BV
AR
DSS
V ds
Id
V gs
V gs
+V d d
VDC
-
Rg
IA R
Id
DUT
V gs
V gs
Fig.14 Unclamped Inductive Switching Test Circuit & Waveform
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WFF4N65S Product Description
650V Super-Junction Power MOSFET
TO2
20F
TO220F
Package Dimension
U n it:m m
E
Q
F
L2
D
P
符 号
Symbol
M IN
MAX
A
4 .5
4 .9
B
-
1 .4 7
b
0 .7
0 .9
c
0 .4 5
0 .6
D
1 5 .6 7
1 6 .0 7
E
9 .9 6
1 0 .3 6
e
L
B
b
C
2.54TYP.
F
2 .3 4
2 .7 4
L
1 2 .5 8
1 3 .3 8
L2
3 .1 3
3 .3 3
ФP
3 .0 8
3 .2 8
Q
3 .2
3 .4
Q1
2 .5 6
2 .9 6
Q1
e
A
e
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WFF4N65S Product Description
650V Super-Junction Power MOSFET
NOTE:
1.We strongly recommend customers check carefully on the trademark when buying our product, if there is any
question, please don't be hesitate to contact us.
2.Please do not exceed the absolute maximum ratings of the device when circuit designing.
3.Winsemi Microelectronics Co., Ltd reserved the right to make changes in this specification sheet and is
subject to change without prior notice.
CONTACT:
Winsemi Microelectronics Co., Ltd.
ADD:Futian District, ShenZhen Tian An Cyber Tech Plaza two East Wing 1002
Post Code : 518040
Tel : 86-0755-82506257
FAX : 86-0755-82506299
Web Site : www.winsemi.com
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