U7 N65S WF WFU7 U7N65S 650V Super-Junction Power MOSFET Features D � Ultra low R dson � Ultra low gate charge (typ. Q g =19nC) � 100% UIS tested � RoHS compl iant G S General Description Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. Absolute Maximum Ratings Symbol VDSS Parameter Drain Source Voltage Continuous Drain Current (Tc=25℃) ID Drain Current Pulsed 1) VGS Gate to Source Voltage EAS I AR EAR Units 650 V 7 (Tc=100℃) I DM Value 4.4 A 21 A ±30 V Single Pulse Avalanche Energy 2) 230 mJ Single Pulse Avalanche Current 1) 7 A 0.5 mJ 83 W 0.67 W/℃ Repetitive Avalanche Energy 1) Total Power Dissipation(@Tc=25℃) PD -Derate above 25℃ TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ Is Continuous diode forward current 7 A Diode pulse current 21 A Is,pulse Notes: 1.Repetitive Rating:Pulse width limited by maximum Junction Temperature 2.I AS=2.5,VDD=60V,R G=25Ω,Starting T J=25℃ Thermal Characteristics Symbol Parameter Min Value Typ Max Units R θJC Thermal Resistance , Junction -to -Case - - 1.5 ℃/W RθJA Thermal Resistance , Junction -to -Ambient - - 62 ℃/W WT-F044-Rev.A1 Nov.2013 Copyr ight@Winsemi Microelectronics Co., Ltd., All right reserved. U7 N65S WF WFU7 U7N Electrical Characteristics(Tc=25℃ unless otherwise noted) Characteristics Symbol Gate leakage current I GSS Test Condition Min Type Max Unit - - ±100 nA Tj=25℃ - - 1 µA Tj=125℃ - 10 - VGS =±30V,VDS =0V VDS =650,VGS =0V， Drain cut -off current Drain -source breakdownvoltage Gate threshold voltage I DSS V(BR)DSS I D=250µA,VGS =0V 650 - - V VGS(th) VDS =VGS,I D=250uA 2.5 3.5 4.5 V Tj=25℃ - 0.51 0.57 Ω Tj=150℃ - 1.2 - VGS =10V,ID=3.5A Drain -source ON resistance R DS(ON) Gate resistance RG f=1MHz,open drain - 0.4 Input capacitance C iss VDS =25V, - 710 Reverse transfer capacitance C rss VGS =0V, - 6 Output capacitance C oss f=1MHz - 470 - 16 - VDD = 300V, I D = 3.5A - 13 - R G = 12Ω, VGS =10V - 35 - tf - 7 - Gate to source charge Qgs - 4 - Gate to drain charge Q gd VDD=480V,ID=3.5A, - 9 - Gate charge total Qg VG S=0 to 10 V - 19 - - 5.8 - V Min Type Max Unit Turn-on delay time td(on) tr Rise time Turn-off delay time td(off) Fall time Gate plateau voltage V plateau Ω pF ns nC Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Symbol Test Condition Diode forward voltage VSD VG S=0 V, I F=3.5A - - 1.2 V Reverse recovery time trr VR=50 V, I F=7A, - 290 - ns Reverse recovery charge Qrr dIF/dt=100 A/μs - 3.4 - µc Peak reverse recovery current I rrm - 14 - A 2/6 Steady, keep you advance U7 N65S WF WFU7 U7N Fig.1 On-Region Characteristics Fig.3 On-Resistance Variation vs. Fig.2 Transfer Characteristics Fig.4 Threshold Voltage vs.Temperature Drain Current Fig.5 Breakdown Voltage vs. Fig.6 On-Resistance vs. Temperature Temperature 3/6 Steady, keep you advance U7 N65S WF WFU7 U7N Fig.7 Capacitance Characteristics Fig.9 Maximum Safe Operating Area Fig.8 Gate Charge Characteristics Fig.10 Power Dissipation vs. Temperature Fig.11 Transient Thermal Response Curve 4/6 Steady, keep you advance U7 N65S WF WFU7 U7N VG S RL Qg 10V VD S VG S Qg s Qg d DUT 10m A C h a rg e Fig.12 Gate Charge Test Circuit & Waveform VD S RG RL VD S 90% VD D VG S VG S DUT 10V 10% td(on) tr to n td(off) tf to ff Fig.13 Switching Test Circuit & Waveforms L EA R =1/2LI Vds 2 AR BV DSS Vds Id Vgs Vgs +Vdd VDC - Rg Id IA R DUT Vgs Vgs Fig.14 Unclamped Inductive Switching Test Circuit & Waveform 5/6 Steady, keep you advance U7 N65S WF WFU7 U7N IPAK Package Dimension U n it:m m E A F 符 号 symbol M IN MAX A 2 .1 9 2 .3 8 b 0 .6 4 0 .8 9 D1 E1 L2 D c Q1 0 .4 6 0 .5 8 D 5 .9 7 6 .2 2 D1 0 .8 9 1 .2 7 E 6 .3 5 6 .7 3 E1 5 .2 1 5 .4 6 e 2.28TY P F 0 .4 6 0 .5 8 L 8 .8 9 9 .6 5 L2 2 .2 5 2 .3 5 Q1 1 .0 2 1 .1 4 L b c e 6/6 Steady, keep you advance