20140109014025 7150

U7
N65S
WF
WFU7
U7N65S
650V Super-Junction Power MOSFET
Features
D
�
Ultra low R dson
�
Ultra low gate charge (typ. Q g =19nC)
�
100% UIS tested
�
RoHS compl iant
G
S
General Description
Power MOSFET
is fabricated using advanced super junction
technology. The resulting device has extremely low on resistance,
making it especially suitable for applications which require superior
power density and outstanding efficiency.
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Drain Source Voltage
Continuous Drain Current (Tc=25℃)
ID
Drain Current Pulsed 1)
VGS
Gate to Source Voltage
EAS
I AR
EAR
Units
650
V
7
(Tc=100℃)
I DM
Value
4.4
A
21
A
±30
V
Single Pulse Avalanche Energy
2)
230
mJ
Single Pulse Avalanche Current
1)
7
A
0.5
mJ
83
W
0.67
W/℃
Repetitive Avalanche Energy
1)
Total Power Dissipation(@Tc=25℃)
PD
-Derate above 25℃
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
Is
Continuous diode forward current
7
A
Diode pulse current
21
A
Is,pulse
Notes:
1.Repetitive Rating:Pulse width limited by maximum Junction Temperature
2.I AS=2.5,VDD=60V,R G=25Ω,Starting T J=25℃
Thermal Characteristics
Symbol
Parameter
Min
Value
Typ
Max
Units
R θJC
Thermal Resistance , Junction -to -Case
-
-
1.5
℃/W
RθJA
Thermal Resistance , Junction -to -Ambient
-
-
62
℃/W
WT-F044-Rev.A1 Nov.2013
Copyr [email protected] Microelectronics Co., Ltd., All right reserved.
U7
N65S
WF
WFU7
U7N
Electrical Characteristics(Tc=25℃ unless otherwise noted)
Characteristics
Symbol
Gate leakage current
I GSS
Test Condition
Min
Type
Max
Unit
-
-
±100
nA
Tj=25℃
-
-
1
µA
Tj=125℃
-
10
-
VGS =±30V,VDS =0V
VDS =650,VGS =0V,
Drain cut -off current
Drain -source breakdownvoltage
Gate threshold voltage
I DSS
V(BR)DSS
I D=250µA,VGS =0V
650
-
-
V
VGS(th)
VDS =VGS,I D=250uA
2.5
3.5
4.5
V
Tj=25℃
-
0.51
0.57
Ω
Tj=150℃
-
1.2
-
VGS =10V,ID=3.5A
Drain -source ON resistance
R DS(ON)
Gate resistance
RG
f=1MHz,open drain
-
0.4
Input capacitance
C iss
VDS =25V,
-
710
Reverse transfer capacitance
C rss
VGS =0V,
-
6
Output capacitance
C oss
f=1MHz
-
470
-
16
-
VDD = 300V, I D = 3.5A
-
13
-
R G = 12Ω, VGS =10V
-
35
-
tf
-
7
-
Gate to source charge
Qgs
-
4
-
Gate to drain charge
Q gd
VDD=480V,ID=3.5A,
-
9
-
Gate charge total
Qg
VG S=0 to 10 V
-
19
-
-
5.8
-
V
Min
Type
Max
Unit
Turn-on delay time
td(on)
tr
Rise time
Turn-off delay time
td(off)
Fall time
Gate plateau voltage
V plateau
Ω
pF
ns
nC
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Diode forward voltage
VSD
VG S=0 V, I F=3.5A
-
-
1.2
V
Reverse recovery time
trr
VR=50 V, I F=7A,
-
290
-
ns
Reverse recovery charge
Qrr
dIF/dt=100 A/μs
-
3.4
-
µc
Peak reverse recovery current
I rrm
-
14
-
A
2/6
Steady, keep you advance
U7
N65S
WF
WFU7
U7N
Fig.1 On-Region Characteristics
Fig.3 On-Resistance Variation vs.
Fig.2 Transfer Characteristics
Fig.4 Threshold Voltage vs.Temperature
Drain Current
Fig.5 Breakdown Voltage vs.
Fig.6 On-Resistance vs. Temperature
Temperature
3/6
Steady, keep you advance
U7
N65S
WF
WFU7
U7N
Fig.7 Capacitance Characteristics
Fig.9 Maximum Safe Operating Area
Fig.8 Gate Charge Characteristics
Fig.10 Power Dissipation vs.
Temperature
Fig.11 Transient Thermal Response Curve
4/6
Steady, keep you advance
U7
N65S
WF
WFU7
U7N
VG S
RL
Qg
10V
VD S
VG S
Qg s
Qg d
DUT
10m A
C h a rg e
Fig.12 Gate Charge Test Circuit & Waveform
VD S
RG
RL
VD S
90%
VD D
VG S
VG S
DUT
10V
10%
td(on)
tr
to n
td(off)
tf
to ff
Fig.13 Switching Test Circuit & Waveforms
L
EA R =1/2LI
Vds
2
AR
BV
DSS
Vds
Id
Vgs
Vgs
+Vdd
VDC
-
Rg
Id
IA R
DUT
Vgs
Vgs
Fig.14 Unclamped Inductive Switching Test Circuit & Waveform
5/6
Steady, keep you advance
U7
N65S
WF
WFU7
U7N
IPAK Package Dimension
U n it:m m
E
A
F
符 号
symbol
M IN
MAX
A
2 .1 9
2 .3 8
b
0 .6 4
0 .8 9
D1
E1
L2
D
c
Q1
0 .4 6
0 .5 8
D
5 .9 7
6 .2 2
D1
0 .8 9
1 .2 7
E
6 .3 5
6 .7 3
E1
5 .2 1
5 .4 6
e
2.28TY P
F
0 .4 6
0 .5 8
L
8 .8 9
9 .6 5
L2
2 .2 5
2 .3 5
Q1
1 .0 2
1 .1 4
L
b
c
e
6/6
Steady, keep you advance
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