SANGDEST MICROELECTRONICS SB1100 Technical Data Data Sheet N0873, Rev. A Applications: z z z z z z Green Products SB1100 SCHOTTKY RECTIFIER Switching power supply Converters Free-Wheeling diodes Reverse battery protection Disk drives Battery charging Features: z z z z z z z z z z z Schottky Barrier Chip Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency For Use in Low Voltage Application Guard Ring Die Construction Plastic Case Material has UL Flammability Classification Rating 94V-O Green Products in Compliance with the RoHS Directive This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Dimensions: In mm 25.4(1.00) MIN (2 PLCS) CATHODE BAND 5.21 (0.205) 4.06 (0.160) CATHODE 1.27(0.050) MAX FLASH(2 PLCS) 0.864 (0.034) 0.71 (0.028) DIA (2 PLCS) ANODE 2.70(0.106) 2.00(0.079) DIA DO-41 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS SB1100 Technical Data Data Sheet N0873, Rev. A Green Products Marking Diagram: SB 1 100 = Device Type = Forward Current (1A) = Reverse Voltage (100V) Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package Shipping SB1100 DO-41 (Pb-Free) 5000pcs / tape For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Peak Inverse Voltage Average Forward Current Symbol VRWM IF(AV) Peak One Cycle Non-Repetitive Surge Current IFSM Condition 50% duty cycle @TC =105℃ rectangular wave form(L=0.375”) 8.3 ms, half Sine pulse • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 Max. 100 Units V 1.0 A 40 A (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS SB1100 Technical Data Data Sheet N0873, Rev. A Green Products Electrical Characteristics: Characteristics Forward Voltage Drop Reverse Current Typical Junction Capacitance * Symbol VF1 VF2 IR1 Cj Condition @ 1.0A, Pulse, TJ = 25℃ @ 1.0A, Pulse, TJ = 125℃ @VR = rated VR TJ = 25℃ @VR = 5.0 V, Tc=25℃ fSIG = 1MHz Max. 0.85 0.75 Units 1.0 mA 80 pF Specification -55 to +150 -55 to +150 Units °C °C 50 °C/W 0.35 g V Pulse Width < 300µs, Duty Cycle <2% Thermal-Mechanical Specifications: Characteristics Junction Temperature Storage Temperature Maximum Thermal Resistance Junction to Ambient Approximate Weight Case Style Symbol TJ Tstg RθJA wt Condition DC operation DO-41 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS Technical Data Data Sheet N0873, Rev. A • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 SB1100 Green Products (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS Technical Data Data Sheet N0873, Rev. A SB1100 Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •